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  september 2011 doc id 15684 rev 2 1/18 18 std5n52u STF5N52U, sti5n52u n-channel 525 v, 1.28 ? , 4.4 a, dpak, to-220fp, i 2 pa k ultrafastmesh? power mosfet features 100% avalanche tested outstanding dv/dt capability gate charge minimized very low intrinsic capacitances very low r ds(on) extremely low t rr applications switching applications ? high voltage inverters specific fo lcd tv ? lighting full bridge topology ? motor control description these devices are n-channel power mosfets developed using ultrafastmesh? technology, which combines the advantages of reduced on- resistance, zener gate protection and very high dv/dt capability with an en hanced fast body-drain recovery diode. figure 1. internal schematic diagram type v dss r ds(on) max i d pw std5n52u 525 v < 1.5 ? 4.4 a 70 w STF5N52U 25 w sti5n52u 70 w 1 2 3 dpak to-220fp i 2 pak 1 3 tab 1 2 3 tab d or tab(2) g(1) s(3) am01476v1 table 1. device summary order code marking package packaging std5n52u 5n52u dpak tape and reel STF5N52U 5n52u to-220fp tube sti5n52u 5n52u i 2 pa k tu b e www.st.com
contents std5n52u, STF5N52U, sti5n52u 2/18 doc id 15684 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
std5n52u, STF5N52U, sti5 n52u electrical ratings doc id 15684 rev 2 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak to-220fp i 2 pak v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 4.4 a i d drain current (continuous) at t c = 100 c 2.8 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 17.6 a p tot total dissipation at t c = 25 c 70 25 70 w i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 4.4 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 170 mj dv/dt (2) 2. i sd 4.4 a, di/dt 400 a/s, peak v ds v (br)dss peak diode recovery voltage slope 20 v/ns v esd(g-s) g-s esd (hbm c=100 pf; r=1.5 k ? ) 2800 v v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit dpak to-220fp i 2 pak r thj-case thermal resistance junction-case max 1.78 5 1.78 c/w r thj-amb thermal resistance junction-ambient max 62.5 100 c/w r thj-pcb thermal resistance junction-pcb 50 c/w
electrical characteristics std5n52u, STF5N52U, sti5n52u 4/18 doc id 15684 rev 2 2 electrical characteristics (tcase =25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 525 v i dss zero gate voltage drain current (v gs = 0) v ds = 525 v v ds = 525 v, t c =125 c 10 500 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 2.2 a 1.28 1.5 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 529 71 13.4 - pf pf pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 420 v, v gs = 0 - 11 - pf r g gate input resistance f=1 mhz open drain - 6 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 416 v, i d = 4.4 a, v gs = 10 v (see figure 17) - 16.9 4.2 8.4 - nc nc nc table 6. switching times symbol parameter test condi tions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 260 v, i d = 2.2 a, r g = 4.7 ?, v gs = 10 v (see figure 16) - 11.4 13.6 23.1 15 - ns ns ns ns
std5n52u, STF5N52U, sti5n52u electrical characteristics doc id 15684 rev 2 5/18 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make th em safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 4.4 17.6 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 4.4 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4.4 a, di/dt = 100 a/s v dd = 60 v (see figure 18) - 55 95 3.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4.4 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 18) - 120 266 4.5 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 30 - - v
electrical characteristics std5n52u, STF5N52U, sti5n52u 6/18 doc id 15684 rev 2 2.1 electrical characterist ics (curves) figure 2. safe operating area for dpak and i 2 pa k figure 3. thermal impedance for dpak and i 2 pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. output characteristics figure 7. transfer characteristics
std5n52u, STF5N52U, sti5n52u electrical characteristics doc id 15684 rev 2 7/18 figure 8. normalized bv dss vs temperature figure 9. static drain-source on resistance figure 10. gate charge vs gate-source voltage figure 11. capacitance variations figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature
electrical characteristics std5n52u, STF5N52U, sti5n52u 8/18 doc id 15684 rev 2 figure 14. source-drain diode forward characteristics figure 15. maximum avalanche energy vs temperature
std5n52u, STF5N52U, sti5n52u test circuits doc id 15684 rev 2 9/18 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive wavefo rm figure 21. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data std5n52u, STF5N52U, sti5n52u 10/18 doc id 15684 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
std5n52u, STF5N52U, sti5n52u package mechanical data doc id 15684 rev 2 11/18 table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l 1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data std5n52u, STF5N52U, sti5n52u 12/18 doc id 15684 rev 2 figure 22. dpak (to-252) drawing figure 23. dpak footprint (a) a. all dimension ar e in millimeters 006 8 772_h 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
std5n52u, STF5N52U, sti5n52u package mechanical data doc id 15684 rev 2 13/18 figure 24. to-220fp drawing table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data std5n52u, STF5N52U, sti5n52u 14/18 doc id 15684 rev 2 figure 25. i2pak (to-262) drawing table 11. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e 10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40 00049 8 2_rev_h
std5n52u, STF5N52U, sti5n52u packaging mechanical data doc id 15684 rev 2 15/18 5 packaging mechanical data table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
packaging mechanical data std5n52u, STF5N52U, sti5n52u 16/18 doc id 15684 rev 2 figure 26. tape for dpak (to-252) figure 27. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
std5n52u, STF5N52U, sti5n52u revision history doc id 15684 rev 2 17/18 6 revision history table 13. document revision history date revision changes 06-may-2009 1 first release. 28-sep-2011 2 inserted new device in i 2 pak. updated tables 1 , 2 and 3 with the new package. updated section 4: package mechanical data with the new package and section 5: packaging mechanical data . minor text changes.
std5n52u, STF5N52U, sti5n52u 18/18 doc id 15684 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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