1 TGA4803 may 2009 ? rev - description the triquint TGA4803 is a medium power wideband agc amplifier that typically provides 8db small signal gain with 3db agc range. typical input and output return loss is >10db. typical noise figure is 5db at 3ghz. typical saturated output power is 17dbm. small signal 3db bw is >50ghz. rf ports are dc coupled enabling the user to customize system corner frequencies. the TGA4803 is an excellent choice for 43gb/s nrz applications. the TGA4803 is capable of driving a single electro-absorptive optical modulator (eam) with electrical non-return to zero (nrz) data. in addition, the TGA4803 may also be used as a transmit predriver or a receive gain block. drain bias may be applied through the output port for best efficiency or through the on-chip drain termination. three stages in cascade demonstrated 3.8vpp output voltage swing with 350mv at the input when stimulated with 43gb/s 2^31-1prbs nrz data. the TGA4803 requires off-chip decoupling and blocking components. each device is 100% dc and rf tested on-wafer to ensure performance compliance. the device is available in die form. lead-free and rohs compliant key features and performance ? 0.15um phemt technology ? dc to >50ghz linear bw ? 8db gain, 14dbm @ p1db ? group delay ripple +/- 6ps to 50 ghz ? <10ps edge rates (20/80) ? 3.5vpp 43gb/s nrz prbs ? bias: vd=6.5v, 100ma ? chip size: 1.90 x 1.09 x 0.10 mm primary applications ? test equipment ? ultra wideband ? 43gb/s oc768 eam driver ? 43gb/s oc768 gain stage: single stage 40gb/s nrz 2^31-1 prbs 40 gb/s data eye: 3.7v(amp) ** ** input 40gb/s data stream generated using an anritsu mux. vin=1.8vpp. measured performance -30 -25 -20 -15 -10 -5 0 5 10 15 0 1020304050607080 frequency (ghz) s-parameter (db) s11 s22 s21 dc to >50 ghz mpa with agc datasheet subject to change without notice triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com
2 TGA4803 may 2009 ? rev - symbol parameter 6 / value notes v + vd(fet) positive supply voltage biased thru on-chip drain termination biased thru the rf output port using a bias tee 10 v 8 v 1 / i + id positive supply current biased thru on-chip drain termination biased thru the rf output port using a bias tee 125 ma 125 ma 1 / p d power dissipation 1.5 w 2 / vg ig negative gate voltage gate current +1v to -3v 5 ma vctl ictl control gate voltage gate current vd/2 to -3v 5 ma 3 / p in vin rf input sinusoidal continuous wave power 43gb/s prbs input voltage peak to peak 18 dbm 4 vpp t ch operating channel temperature 200 c 4 / 5/ mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c notes: 1 / assure vd - vctl <6v. compute vd as follows, vd=v+ - id*25. 2 / assure the combination of vd and id does not exceed maximum power dissipation rating. 3 / when operated at this bias condition with a base plate temperature of 70 c, the median life is 1.4e4 hours 4 / assure vctl never exceeds vd during bias up and down sequences. also, assure vctl never exceeds 4v during normal operation. 5 / these ratings apply to each individual fet. 6 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 7 / these ratings represent the maxi mum operable values for the device. maximum ratings 7 / triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com
3 TGA4803 may 2009 ? rev - notes: 1 / verified at rf on-wafer probe . rf specifications (t a = 25 c + 5 c) note test measurement conditions value units min typ max small signal bw >50 ghz 1 / small-signal gain magnitude 2.5ghz 8 db agc range midband 3 db noise figure 14 ghz 6 db saturated output voltage (eye amplitude) 43gb/s with vin=2vpp 3.5 v 1 / p1db dc-20ghz tbd dbm 1 / input return loss magnitude dc-50ghz -10 db 1 / output return loss magnitude dc-50ghz -10 db group delay dc-50ghz +/- 20 ps rise time 20/80% 10 ps triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com
4 TGA4803 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com parameter test condition t ch ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to backside of carrier) vd = 6v, v ctrl = 3 v, i d = 100ma 109 65 2.3e6 thermal information note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 TGA4803 may 2009 ? rev - measured performance bias conditions: vd = 10 v, idq = 82 ma, vg2=3-3.2v @ room temperature -30 -25 -20 -15 -10 -5 0 5 10 15 0 1020304050607080 frequency (ghz) s-parameter (db) s11 s22 s21 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com
6 TGA4803 may 2009 ? rev - mechanical drawing triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com
7 TGA4803 may 2009 ? rev - bias procedure a . for applying drain bias thru vd 1. make sure no rf power is applied to the device before continuing. 2. set vg=0 set vctl=0. 3. raise vd to 6v while monitoring drain current. id should be near 20ma. 4. raise vctl to +2.5v (no greater than 3.5v). 5. adjust vg more positive until drain current reaches 100ma. 6. apply vin=1.8v(amplitude) nrz 40gb/s b. for applying drain bias thru v+ 1. make sure no rf power is applied to the device before continuing. 2. set vg=0 set vctl=0. 3. raise v+ to 5v while monitoring drain current. i+ should be near 20ma. 4. raise vctl to 2.5v (no greater than 3.5v) 5. raise vg more positive until drain current is 80ma 6. raise v+ to 8v 7. adjust vg for id=100ma 8. apply vin=1.8v(amplitude) nrz 40gb/s caution: 1. assure vd - vctl < 6v. when biasing thru v+, compute vd as follows, vd=v+ - id*30. 2. assure vctl never exceeds vd during bias up and down sequences. also, assure vctl never exceeds 4v during normal operation. 1 2 4 3 5 rf in 1800pf 0.1uf (2pl) v+ vg 1800pf 0.1uf (2pl) vctl TGA4803 note: drain bias should be applied at vd (pin 5) thru broadband bias tee for best efficiency. bypass caps must remain on pin 4 0.01uf vtee rfout and vd triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com
8 TGA4803 may 2009 ? rev - reflow process assembly notes: ? ausn (80/20) solder with limited exposure to temperatures at or above 300 o c ? alloy station or conveyor furnace with reducing atmosphere ? no fluxes should be utilized ? coefficient of thermal expansion matching is critical for long-term reliability ? storage in dry nitrogen atmosphere component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets preferred method of pick up ? avoidance of air bridges during placement ? force impact critical during auto placement ? organic attachment can be used in low-power applications ? curing should be done in a convection oven; proper exhaust is a safety concern ? microwave or radiant curing should not be used because of differential heating ? coefficient of thermal expansion matching is critical interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique ? force, time, and ultrasonics are critical parameters ? aluminum wire should not be used ? discrete fet devices with small pad sizes should be bonded with 0.0007- inch wire ? maximum stage temperature: 200 o c gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. recommend additional 0.01uf bypass cap located on vctrl supply line on test fixture 0.01uf triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com
9 TGA4803 may 2009 ? rev - assembly process notes reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 0 c. triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com
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