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1/16 april 2005 stp8nm60 - stp8nm60fp STB8NM60 - std5nm60 - std5nm60-1 n-channel 650v@tjmax-0.9 ? -8a to-220/fp/d/ipak/d2pak stripfet? ii mosfet table 1: general features typical r ds (on) = 0.9 ? high dv/dt and avalanche capabilities 100% avalanche tested low input capacitance and gate charge low gate input resistance description the mdmesh? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the company?s powermesh? horizon- tal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the company?s proprietary strip tech- nique yields overall dynamic performance that is significantly better than that of similar completi- tion?s products. applications the mdmesh? family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies. table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw stp8nm60 stp8nm60fp std5nm60 std5nm60-1 STB8NM60 650 v 650 v 650 v 650 v 650 v < 1 ? < 1 ? < 1 ? < 1 ? < 1 ? 8 a 8 a(*) 5 a 5 a 5 a 100 w 30 w 96 w 96 w 96 w 1 2 3 to-220 to-220fp 1 3 dpak 3 2 1 ipak 1 3 d 2 pak sales type marking package packaging stp8nm60 p8nm60 to-220 tube stp8nm60fp p8nm60fp to-220fp tube std5nm60 d5nm60 dpak tape & reel std5nm60-1 d5nm60 ipak tube STB8NM60 b8nm60 d 2 pak tape & reel rev. 2 www.datasheet.in
stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1- STB8NM60 2/16 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 5a, di/dt 400a/s, v dd v (br)dss , t j t jmax. (*) limited only by maximum temperature allowed table 4: thermal data table 5: avalanche characteristics electrical characteristics (t case =25 c unless otherwise specified) table 6: on / off symbol parameter value unit to-220/d2pak to-220fp dpak/ipak v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 88 (*)5a i d drain current (continuous) at t c = 100 c 5 5 (*) 3.1 a i dm ( ) drain current (pulsed) 32 32 (*) 20 a p tot total dissipation at t c = 25 c 100 30 96 w derating factor 0.8 0.24 0.4 w/ c dv/dt (1) peak diode recovery voltage slope 15 15 15 v/ns v iso insulation withstand voltage (dc) - 2500 - v t j t stg operating junction temperature storage temperature -55 to 150 c to-220/d2pak to-220fp dpak/ipak rthj-case thermal resistance junction-case max 1.25 4.16 1.3 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 2.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 200 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 2.5 a 0.9 1 ? www.datasheet.in
3/16 stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1 - STB8NM60 - STB8NM60 electrical characteristics (continued) table 7: dynamic table 8: switching on/off table 9: source drain diode (2) pulsed: pulse duration = 300 s, duty cycle 1.5 %. symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds = i d(on) x r ds(on)max, i d =2.5a 2.4 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 440 100 10 pf pf pf c oss eq. (2) equivalent output capacitance v gs = 0v, v ds = 0v to 480v 50 pf t d(on) t r turn-on delay time rise time v dd = 300 v, i d = 2.5 a r g =4.7 ? v gs = 10 v (resistive load see, figure 3) 14 10 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400v, i d = 5 a, v gs = 10v 13 5 6 18 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 300 v, i d = 2.5 a r g =4.7 ? v gs = 10 v (resistive load see, figure 3) 23 10 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480v, i d = 5 a, r g =4.7 ?, v gs = 10v (inductive load see, figure 5) 7 10 17 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 8 32 a a v sd (2) forward on voltage i sd = 5 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100a/s v dd = 100 v, t j = 25 c (see test circuit, figure 5) 300 1950 13 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100a/s v dd = 100 v, t j = 150 c (see test circuit, figure 5) 445 3005 13.5 ns c a www.datasheet.in
stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1- STB8NM60 4/16 figure 3: safe operating area for to-220/ d2pak figure 4: safe operating area for to-220fp figure 5: safe operating area for dpak/ipak figure 6: thermal impedance for to-220/ d2pak figure 7: thermal impedance for to-220fp figure 8: thermal impedance for dpak/ipak www.datasheet.in
5/16 stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1 - STB8NM60 - STB8NM60 figure 9: output characteristics figure 10: transconductance figure 11: gate charge vs gate source voltage figure 12: transfer characteristics figure 13: static drain-source on resistance figure 14: capacitance variations www.datasheet.in
stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1- STB8NM60 6/16 figure 15: normalized gate thereshold volt- age vs temperature j figure 16: source drain diode forward char- acteristics figure 17: normalized on resistance vs tem- perature www.datasheet.in
7/16 stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1 - STB8NM60 - STB8NM60 figure 18: unclamped inductive load test cir- cuit figure 19: switching times test circuit for resistive load figure 20: test circuit for inductive load switching and diode recovery times figure 21: unclamped inductive wafeform figure 22: gate charge test circuit www.datasheet.in
stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1- STB8NM60 8/16 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data www.datasheet.in
9/16 stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1 - STB8NM60 - STB8NM60 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data www.datasheet.in
stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1- STB8NM60 10/16 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e www.datasheet.in
11/16 stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1 - STB8NM60 - STB8NM60 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data www.datasheet.in
stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1- STB8NM60 12/16 tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters www.datasheet.in
13/16 stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1 - STB8NM60 - STB8NM60 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0 o 4 o d 2 pak mechanical data 3 www.datasheet.in
stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1- STB8NM60 14/16 tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data www.datasheet.in
15/16 stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1 - STB8NM60 - STB8NM60 table 10: revision history date revision description of changes 11-apr-2005 2 inserted d 2 pa k. www.datasheet.in
stp8nm60 - stp8nm60fp - std5nm60 - std5nm60-1- STB8NM60 16/16 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.datasheet.in

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