hb56u232 series 2,097,152-word 32-bit high density dynamic ram module description the hb56u232 is a 2 m 32 dynamic ram module, mounted 16 pieces of 4-mbit dram (hm514405cs) sealed in soj package. an outline of the hb56u232 is 72-pin single in-line package. therefore, the hb56u232 makes high density mounting possible without surface mount technology. the hb56u232 provides common data inputs and outputs. decoupling capacitors are mounted beneath each soj on the module board. the hb56u232 offers extended data out (edo) page mode as a high speed access mode. features 72-pin single in-line package lead pitch: 1.27 mm single 5 v ( 5%) supply high speed access time: t rac = 60/70 ns (max) low power dissipation active mode: 4.83/4.41 w (max) standby mode: 168 mw (max) edo page mode capability 1,024 refresh cycles: 16 ms 2 variations of refresh ras -only refresh cas -before- ras refresh ttl compatible
hb56u232 series 2 ordering information type no. access time package contact pad HB56U232B-6C 60 ns 72-pin sip socket type gold hb56u232b-7c 70 ns hb56u232sb-6c 60 ns 72-pin sip socket type solder hb56u232sb-7c 70 ns pin arrangement 1pin 36pin 37pin 72pin pin no. pin name pin no. pin name pin no. pin name pin no. pin name 1v ss 19 nc 37 nc 55 dq11 2 dq0 20 dq4 38 nc 56 dq27 3 dq16 21 dq20 39 v ss 57 dq12 4 dq1 22 dq5 40 cas0 58 dq28 5 dq17 23 dq21 41 cas2 59 v cc 6 dq2 24 dq6 42 cas3 60 dq29 7 dq18 25 dq22 43 cas1 61 dq13 8 dq3 26 dq7 44 ras0 62 dq30 9 dq19 27 dq23 45 ras1 63 dq14 10 v cc 28 a7 46 nc 64 dq31 11 nc 29 nc 47 we 65 dq15 12 a0 30 v cc 48 nc 66 pd5 13 a1 31 a8 49 dq8 67 pd1 14 a2 32 a9 50 dq24 68 pd2 15 a3 33 ras3 51 dq9 69 pd3 16 a4 34 ras2 52 dq25 70 pd4 17 a5 35 nc 53 dq10 71 nc 18 a6 36 nc 54 dq26 72 v ss
hb56u232 series 3 pin description pin name function a0 a9 address input: a0 a9 row address: a0 a9 column address: a0 a9 refresh address: a0 a9 dq0 dq31 data-in/data-out cas0 to cas3 column address strobe ras0 to ras3 row address strobe we read/write enable v cc power supply (+5 v) v ss ground pd1 to pd4 presence detect pin pd5 presence detect pin for edo nc no connection presence detect pin arrangement function pin no. pin name 60 ns 70 ns 66 pd5 v ss v ss 67 pd1 nc nc 68 pd2 nc nc 69 pd3 nc v ss 70 pd4 nc nc
hb56u232 series 4 block diagram cas0 ras0 cas1 dq0 to dq3 dq4 to dq7 dq8 to dq11 dq12 to dq15 4 4 4 4 ras cas i/o1 to i/o4 oe d0 ras cas i/o1 to i/o4 oe d1 ras cas i/o1 to i/o4 oe d2 ras cas i/o1 to i/o4 oe d3 ras cas i/o1 to i/o4 oe d8 ras cas i/o1 to i/o4 oe d9 ras cas i/o1 to i/o4 oe d10 ras cas i/o1 to i/o4 oe d11 ras1 cas2 ras2 cas3 dq16 to dq19 dq20 to dq23 dq24 to dq27 dq28 to dq31 4 4 4 4 10 ras cas i/o1 to i/o4 oe d4 ras cas i/o1 to i/o4 oe d5 ras cas i/o1 to i/o4 oe d6 ras cas i/o1 to i/o4 oe d7 ras cas i/o1 to i/o4 oe d12 ras cas i/o1 to i/o4 oe d13 ras cas i/o1 to i/o4 oe d14 ras cas i/o1 to i/o4 oe d15 ras3 a0 to a9 d0 to d15 d0 to d15 d0 to d15 d0 to d15 we v cc v ss *d0 to d15 : hm514405 co0 to c19
hb56u232 series 5 absolute maximum ratings parameter symbol value unit voltage on any pin relative to v ss v t 1.0 to +7.0 v supply voltage relative to v ss v cc 1.0 to +7.0 v short circuit output current iout 50 ma power dissipation pt 8 w operating temperature topr 0 to +70 c storage temperature tstg 55 to +125 c recommended dc operating conditions (ta = 0 to +70 c) parameter symbol min typ max unit note supply voltage v ss 000 v v cc 4.75 5.0 5.25 v 1 input high voltage v ih 2.4 5.5 v 1 input low voltage v il 1.0 0.8 v 1 note: 1. all voltage referred to v ss .
hb56u232 series 6 dc characteristics (ta = 0 to +70 c, v cc = 5 v 5%, v ss = 0 v) hb56u232 60 ns 70 ns parameter symbol min max min max unit test conditions notes operating current i cc1 920 840 ma t rc = min 1, 2 standby current i cc2 32 32 ma ttl interface ras , cas = v ih dout = high-z 16 16 ma cmos interface ras , cas 3 v cc 0.2 v dout = high-z ras -only refresh current i cc3 920 840 ma t rc = min 2 standby current i cc5 80 80 ma ras = v ih , cas = v il dout = enable 1 cas -before- ras refresh current i cc6 920 840 ma t rc = min edo page mode current i cc4 1080 1000 ma t hpc = min 1, 3 input leakage current i li 10 10 10 10 m a 0 v vin 7.0 v output leakage current i lo 10 10 10 10 m a 0 v vout 7.0 v dout = disable output high voltage v oh 2.4 v cc 2.4 v cc v high iout = 2 ma output low voltage v ol 0 0.4 0 0.4 v low iout = 2 ma notes: 1. i cc depends on output load condition when the device is selected, i cc max is specified at the output open condition. 2. address can be changed once or less while ras = v il . 3. address can be changed once or less while cas = v ih . capacitance (ta = 25 c, v cc = 5 v 5%) parameter symbol typ max unit notes input capacitance (address) c i1 95 pf 1 input capacitance ( we )c i2 127 pf 1 input capacitance ( ras )c i3 43 pf 1 input capacitance ( cas )c i4 43 pf 1 i/o capacitance (dq0 to 31) c i/o 29 pf 1, 2 notes: 1. capacitance measured with boonton meter or effective capacitance measuring method. 2. ras and cas = v ih to disable dout.
hb56u232 series 7 ac characteristics refer to the hm514405c series data sheet. the hb56u232 writes data only in early write cycle (t wcs 3 t wcs (min)). delayed write cycle is not available ( oe pin is fixed to v ss ). physical outline unit: mm/inch 107.95 4.25 101.19 3.98 2 f 3.175 0.125 6.35 0.25 2.03 0.08 6.35 0.25 44.45 1.75 44.45 1.75 1.27 typ. 0.05 typ. 6.35 0.25 b 2.54 min 0.10 min 1.27 typ. 0.05 typ. 10.16 0.40 25.40 1.00 a 9.14 max. 0.36 max. 3.17 min. 0.125 min. 5.72 min. 0.225 min. r 1.57 r 0.062 r 1.57 r 0.062 detail a detail b 60ns 70ns 2.54 min. 0.10 1.07 max. 0.042 0.25 max. 0.01 1 72 1 72
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