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| BYW98-200 200v 3.0a web site: www.taychipst.com 1 of 2 features e-mail: sales@taychipst.com maximum ratings and electrical characteristics . high efficiency fast recovery rectifier diodes very low conduction losses negligible switching losses low forward and reverse recovery times symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i frm repetitive peak forward current * tp=5 m s f=1khz 110 a i f (av) average forward current* ta = 75c d = 0.5 3a i fsm surge non repetitive forward current t p = 10ms sinusoidal 70 a t stg storage temperature range - 65 to + 150 c tj maximum operating junction temperature 150 c t l maximum lead temperature for soldering during 10s at 4mm from case 230 c absolute ratings (limiting values) symbol parameter test conditions min. typ. max. unit i r * reverse leakage current t j = 25 cv r = v rrm 10 m a t j = 100 c 0.5 ma v f ** forward voltage drop t j = 25 ci f = 9a 1.2 v t j = 100 ci f = 3a 0.78 0.85 static electrical characteristics symbol test conditions min. typ. max. unit t rr t j = 25 ci f = 1a di f /dt = - 50a/ m s v r = 30v 35 ns q rr t j = 25 ci f = 3a di f /dt = - 20a/ m s v r 30v 15 nc t fr t j = 25 ci f = 3a di f /dt = - 50a/ m s measured at 1.1 x v f max 20 ns v fp t j = 25 ci f = 3a di f /dt = - 50a/ m s 5v recovery characteristics
ratings and characteristic curves BYW98-200 e-mail: sales@taychipst.com web site: www.taychipst.com 2 of 2 BYW98-200 200v 3.0a high efficiency fast recovery rectifier diodes 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 pf(av)(w) d = 0.2 d = 0.5 d = 1 d = 0.05 d = 0.1 if(av) (a) t d =tp/t tp fig. 1: average forward power dissipation versus average forward current. 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 if(av)(a) rth(j-a)=75c/w rth(j-a)=rth(j-l) tamb(c) t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d =0.5). 5 10152025 0 10 20 30 40 50 60 70 80 90 rth(c/w) rth(j-a) rth(j-l) lleads(mm) fig. 3: thermal resistance versus lead length. 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.10 1.00 zth(j-a)/rth(j-a) tp(s) t d =tp/t tp d = 0.5 d = 0.2 d = 0.1 single pulse fig. 4: variation of thermal impedance junction to ambient versus pulse duration (recommended pad 1 10 100 200 10 20 50 100 c(pf) f=1mhz tj=25c vr(v) fig. 6: junction capacitance versus reverse voltage applied (typical values). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.10 1.00 10.00 70.00 ifm(a) tj=100c (typical values) tj=25c tj=100c vfm(v) fig. 5: forward voltage drop versus forward current (maximum values). 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 irm(a) if=3a 90% confidence tj=100c tj=25c tj=100c dif/dt(a/s) fig. 8: peak reverse recovery current versus di f /dt. 1 10 100 0 20 40 60 80 100 trr(ns) if=3a 90% confidence tj=100c tj=25c tj=100c dif/dt(a/s) fig. 7: reverse recovery time versus di f /dt. |
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