AO6401 30v p-channel mosfet general description product summary v ds i d (at v gs =-10v) -5a r ds(on) (at v gs =-10v) < 47m w r ds(on) (at v gs =-4.5v) < 64m w r ds(on) (at v gs =-2.5v) < 85m w symbol v ds drain-source voltage -30 the AO6401 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable fo r use as a load switch or in pwm applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -30v tsop6 top view bottom view pin1 g ds d d g d s d top view 1 2 3 4 5 6 v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl 1.3 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics power dissipation b p d t a =25c w parameter typ max c/w r q ja 47.5 74 62.5 v 12 gate-source voltage drain-source voltage -30 v a i d -5 -4 -28 t a =25c t a =70c pulsed drain current c continuous drain current 2 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 37 110 50 maximum junction-to-ambient a units tsop6 top view bottom view pin1 g ds d d g d s d top view 1 2 3 4 5 6 rev 7: mar 2011 www.aosmd.com page 1 of 5
AO6401 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.5 -0.9 -1.3 v i d(on) -28 a 39 47 t j =125c 60 74 45 64 m w 59 85 m w g fs 18 s v sd -0.7 -1 v i s -2.5 a c iss 645 780 pf c oss 80 pf c rss 55 80 pf r g 4 7.8 12 w q g (10v) 14 17 nc q g (4.5v) 7 8.5 nc q gs 1.5 nc q gd 2.5 nc t 6.5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =-10v, v ds =-15v, i d =-5a gate source charge gate drain charge total gate charge r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current m w on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-5a forward transconductance diode forward voltage i s =-1a,v gs =0v v ds =-5v, i d =-5a v gs =-2.5v, i d =-1a v gs =-4.5v, i d =-4a reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage t d(on) 6.5 ns t r 3.5 ns t d(off) 41 ns t f 9 ns t rr 11 13.5 ns q rr 3.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-5a, di/dt=100a/ m s turn-on delaytime turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =3 w , r gen =3 w turn-off fall time i f =-5a, di/dt=100a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 7: mar 2011 www.aosmd.com page 2 of 5
AO6401 typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-2.5v i d =-1a v gs =-10v i d =-5a v gs =-4.5v i d =-4a 25 c 125 c v ds =-5v v gs =4.5v v gs =10v 0 5 10 15 20 25 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-2.0v -2.5v 10v 4.5v v gs =2.5v 40 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-2.5v i d =-1a v gs =-10v i d =-5a v gs =-4.5v i d =-4a 30 50 70 90 110 130 150 0 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =-5v v gs =4.5v v gs =10v i d =-5a 25 c 125 c 0 5 10 15 20 25 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-2.0v -2.5v 10v 4.5v v gs =2.5v rev 7: mar 2011 www.aosmd.com page 3 of 5
AO6401 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 0 5 10 15 20 25 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-5a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0 2 4 6 8 10 0 5 10 15 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 0 5 10 15 20 25 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-5a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =110 c/w rev 7: mar 2011 www.aosmd.com page 4 of 5
AO6401 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 7: mar 2011 www.aosmd.com page 5 of 5
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