View AON6910A_6010345.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AON6910A 30v dual asymmetric n-channel mosfet general description product summary q1 q2 30v 30v i d (at v gs =10v) 37a 80 a r ds(on) (at v gs =10v) <14m ? <4.1m ? r ds(on) (at v gs = 4.5v) <20m ? <5.0m ? 100% uis tested 100% rg tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg parameter symbol typ q1 typ q2 max q1 max q2 t 10s 29 27 35 32 steady-state 56 51 67 61 steady-state r jc 3.3 2 4 2.4 the AON6910A is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization.it includes two specialized mosfets in a dual power dfn5x6b package. the q1 "high side" mosfet is desgined to minimze switching losses. the q2 "low side" mosfet is desgined for low r ds(on) to reduce conduction losses.power losses are minimized due to an extremely low combination of r ds(on) and crss.in addition,switching behavior is well controlled with a "schottky style" soft recovery body diode. 1.9 2 1.2 1.3 31 52 12.5 20 85 junction and storage temperature range -55 to 150 c thermal characteristics gate-source voltage drain-source voltage 30 avalanche energy l=0.1mh c 190 9.1 37 80 23 t a =25c v v 52 20 12 v ds max q1 max q2 units units 35 22 61 a w parameter absolute maximum ratings t a =25c unless otherwise noted mj avalanche current c continuous drain current a 7.2 13 21 i dsm a t a =70c i d t c =25c t c =100c pulsed drain current c continuous drain current 16 power dissipation a p dsm w t a =70c t a =25c t c =25c t c =100c power dissipation b p d maximum junction-to-case c/w c/w maximum junction-to-ambient a d r ja maximum junction-to-ambient a c/w top view pin1 dfn5x6b top view bottom view bottom view rev 0: jan 2011 www.aosmd.com page 1 of 11
AON6910A symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.4 v i d(on) 85 a 11.5 14 t j =125c 17.5 21 16 20 m ? g fs 30 s v sd 0.73 1 v i s 33 a c iss 400 510 670 pf c oss 150 220 310 pf c rss 13 22 38 pf r g 0.9 1.8 2.7 ? q g (10v) 5.9 7.4 9 nc q g (4.5v) 2.6 3.3 4.0 nc q gs 1.2 1.5 1.8 nc q gd 0.8 1.4 2 nc t d(on) 4.3 ns t r 8ns t d(off) 15.8 ns t f 3.4 ns t rr 7.2 911ns q rr 11.8 14.7 17.7 nc components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. q1 electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current a gate-body leakage current v ds =0v, v gs = 20v v ds =v gs i d =250 a on state drain current v gs =10v, v ds =5v r ds(on) static drain-source on-resistance v gs =10v, i d =9.1a m ? v gs =4.5v, i d =9.1a forward transconductance v ds =5v, i d =9.1a diode forward voltage i s =1a,v gs =0v maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =10v, v ds =15v, i d =9.1a total gate charge gate source charge gate drain charge body diode reverse recovery charge i f =9.1a, di/dt=500a/ s turn-on delaytime v gs =10v, v ds =15v, r l =0.75 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =9.1a, di/dt=500a/ s a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta=25c. rev 0: jan 2011 www.aosmd.com page 2 of 11
AON6910A q1-channel: typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 10 20 30 40 50 60 0123456 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 8 10 12 14 16 18 20 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =9.1a v gs =10v i d =9.1a 5 10 15 20 25 30 35 40 3579 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =9.1a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 4.5v 10v 4v 3.5v 7v 6v 5v rev 0: jan 2011 www.aosmd.com page 3 of 11
AON6910A q1-channel: typical electrical and thermal characteristic s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 1ms 100us dc r ds(on) limited t j(max) =150c t c =25c 10 s 0 2 4 6 8 10 02468 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =15v i d =9.1 a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c r jc =4c/w rev 0: jan 2011 www.aosmd.com page 4 of 11
AON6910A q1-channel: typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10.0 100.0 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) t a =25c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c t a =150c t a =100c t a =125c r ja =67c/w rev 0: jan 2011 www.aosmd.com page 5 of 11
AON6910A symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.5 t j =125c 100 i gss 100 na v gs(th) gate threshold voltage 1.2 1.6 2 v i d(on) 190 a 3.4 4.1 t j =125c 5.5 6.6 45 m ? g fs 100 s v sd 0.4 0.7 v i s 40 a c iss 2730 3415 4100 pf c oss 240 340 440 pf c rss 140 232 325 pf r g 0.6 1.2 1.8 ? q g (4.5v) 19 24 29 nc q gs 6.6 nc q gd 10 nc t d(on) 9ns t r 4.5 ns t d(off) 47 ns t f 5.5 ns t rr 8101 2 ns q rr 12 15 18 nc components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. q2 electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =10ma, v gs =0v i dss zero gate voltage drain current ma gate-body leakage current v ds =0v, v gs = 12v v ds =v gs i d =250 a on state drain current v gs =10v, v ds =5v r ds(on) static drain-source on-resistance v gs =10v, i d =16a m ? v gs =4.5v, i d =16a forward transconductance v ds =5v, i d =16a diode forward voltage i s =1a,v gs =0v maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =10v, v ds =15v, i d =16a gate source charge gate drain charge body diode reverse recovery charge i f =16a, di/dt=500a/ s turn-on delaytime v gs =10v, v ds =15v, r l =0.94 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =16a, di/dt=500a/ s a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta=25c. rev 0: jan 2011 www.aosmd.com page 6 of 11
AON6910A typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 20 40 60 80 100 1.5 2.0 2.5 3.0 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d 16a v gs =10v i d =16a 2 4 6 8 10 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =16a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =2.5v 10v 3v 4.5v rev 0: jan 2011 www.aosmd.com page 7 of 11
AON6910A q2-channel: typical electrical and thermal characteristic s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 1ms 100us dc r ds(on) limited t j(max) =150c t c =25c 10 s 0 2 4 6 8 10 0 102030405060 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =15v i d =16 a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c r jc =2.4c/w rev 0: jan 2011 www.aosmd.com page 8 of 11
AON6910A q2-channel: typical electrical and thermal characteristic s 17 5 2 10 0 18 40 10 100 1000 1 10 100 1000 time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 50 60 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 15 30 45 60 75 90 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) t a =25c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c t a =150c t a =100c t a =125c r ja =61c/w rev 0: jan 2011 www.aosmd.com page 9 of 11
AON6910A typical electrical and thermal characteristic s 0 5 10 15 20 25 0 5 10 15 20 25 30 i s (a) figure 19: diode reverse recovery charge and peak current vs. conduction current q rr (nc) 0 2 4 6 8 10 12 i rm (a) di/dt=800a/ s 125oc 125oc 25oc 25oc q rr i rm 0 5 10 15 20 25 0 200 400 600 800 1000 di/dt (a/ s) figure 21: diode reverse recovery charge and peak current vs. di/dt q rr (nc) 0 2 4 6 8 10 i rm (a) 125oc 125oc 25oc 25oc i s =20a q rr i rm 0 2 4 6 8 10 12 0 5 10 15 20 25 30 i s (a) figure 20: diode reverse recovery time and softness factor vs. conduction current t rr (ns) 0 0.5 1 1.5 2 2.5 3 3.5 4 s di/dt=800a/ s 125oc 125oc 25oc 25oc t rr s 0 3 6 9 12 15 18 0 200 400 600 800 1000 di/dt (a/ s) figure 22: diode reverse recovery time and softness factor vs. di/dt t rr (ns) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 s 125oc 25oc 25oc 125oc i s =20a t rr s 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 50 100 150 200 temperature (c) figure 17: diode reverse leakage current vs. junction temperature i r (a) v ds =15v v ds =30v 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 200 temperature (c) figure 18: diode forward voltage vs. junction temperature v sd (v) i s =1a 10a 20a 5a rev 0: jan 2011 www.aosmd.com page 10 of 11
AON6910A - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: jan 2011 www.aosmd.com page 11 of 11

▲Up To Search▲

Price & Availability of AON6910A

	To Download AON6910A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .