mar.2002 mitsubishi semiconductor M54587p/fp 8-unit 500ma darlington transistor array with clamp diode description M54587p and M54587fp are eight-circuit collector-current- synchronized darlington transistor arrays. the circuits are made of pnp and npn transistors. both the semiconductor integrated circuits perform high-current driving with ex- tremely low input-current supply. features high breakdown voltage (bv ceo 50v) high-current driving (i c(max) = 500ma) l?active level input with input diode with clamping diodes wide operating temperature range (ta = ?0 to +75 c) application interfaces between microcomputers and high-voltage, high- current drive systems, drives of relays and mos-bipolar logic ic interfaces function the M54587 is produced by adding pnp transistors to m54585 inputs. eight circuits having active l-level inputs are provided. resistance of 7k ? and diode are provided in series between each input and pnp transistor base. the input diode is in- tended to prevent the flow of current from the input to the v cc . without this diode, the current flow from ??input to the v cc and the ??input circuits is activated, in such case where one of the inputs of the 8 circuits is ??and the others are ? to save power consumption. the diode is inserted to prevent such misoperation. this device is most suitable for a driver using nmos ic out- put especially for the driver of current sink. collector current is 500ma maximum. collector-emitter sup- ply voltage is 50v. the M54587fp is enclosed in a molded small flat package, enabling space saving design. pin configuration circuit diagram (each circuit) input 7k 7.2k 3k 2.7k 7k v cc com gnd output unit : ? the eight circuits share the vcc, com and gnd the diode, indicated with the dotted line, is parasitic, and cannot be used. 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 nc in1 gnd com common v cc input output o1 o2 o3 o4 o5 o6 o7 o8 in2 in3 in4 in5 in6 in7 in8 nc : no connection package type 20p4(p) 20p2n-a(fp)
mar.2002 mitsubishi semiconductor M54587p/fp 8-unit 500ma darlington transistor array with clamp diode ns ns t on t off 120 2400 symbol unit parameter test conditions limits min typ max switching characteristics (unless otherwise noted, ta = 25 c) c l = 15pf (note 1) turn-on time turn-off time v v v 8 v cc v cc 3.6 5 4 v cc 0.7 0 v cc v ih v il collector current per channel recommended operating conditions (unless otherwise noted, ta = ?0 ~ +75 c) i c 0 0 ma 400 200 parameter limits symbol unit supply voltage min typ max h input voltage l input voltage v cc = 5v, duty cycle p : no more than 34% fp : no more than 15% v cc = 5v, duty cycle p : no more than 6% fp : no more than 5% absolute maximum ratings (unless otherwise noted, ta = ?0 ~ +75 c) supply voltage collector-emitter voltage input voltage collector current clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature v v v ma ma v w c c 10 0.5 ~ +50 0.5 ~ v cc 500 500 50 1.79/1.1 20 ~ +75 55 ~ +125 ratings symbol parameter conditions unit output, h current per circuit output, l ta = 25 c, when mounted on board v cc v ceo v i i c i f v r p d t opr t stg electrical characteristics (unless otherwise noted, ta = ?0 ~ +85 c) ? : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. 1.2 0.95 290 1.4 0.1 1.9 3500 50 2000 v (br) ceo i i v f i r i cc h fe v v a v a ma 2.4 1.6 600 2.4 100 3 symbol unit parameter test conditions limits min typ max collector-emitter breakdown voltage input current clamping diode forward volltage clamping diode reverse current supply current (an only input) dc amplification factor i ceo = 100 a v i = v cc 3.6v v i = v cc 3.6v i f = 400ma v r = 50v v cc = 5v, v i = v cc 3.5v v cc = 5v, v ce = 4v, i c = 350ma, ta = 25 c v ce(sat) collector-emitter saturation voltage ? i c = 400ma i c = 200ma
mar.2002 mitsubishi semiconductor M54587p/fp 8-unit 500ma darlington transistor array with clamp diode typical characteristics input 50% 50% 50% 50% output ton toff pg input v cc output v o r l open c l 50 ? (1)pulse generator (pg) characteristics : prr=1khz, tw = 10 s, tr = 6ns, tf = 6ns, zo = 50 ? v i = 0.4 ~ 4v (2)input-output conditions : r l = 30 ? , vo = 10v, vcc = 4v (3)electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device timing diagram note 1 test circuit ambient temperature ta ( c) power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 thermal derating factor characteristics M54587p M54587fp output saturation voltage v ce(sat) (v) collector current ic (ma) 0 0 200 100 300 400 500 0.5 1.0 1.5 2.0 output saturation voltage collector current characteristics v i = 1.4v v cc = 5v ta = 20 c ta = 25 c ta = 75 c duty cycle (%) collector current ic (ma) 0 0 200 100 300 400 500 20 40 60 80 100 duty cycle-collector characteristics (M54587p) the collector cu rrent values represent the current per circuit. repeated frequency 10hz the value the circle represents the value of the simultaneously-operated circuit. vcc = 5v ta = 25 c 1 2 7 3 4 5 8 6 the collector cu rrent values represent the current per circuit. repeated frequency 10hz the value the circle represents the value of the simultaneously-operated circuit. vcc = 5v ta = 75 c duty cycle (%) collector current ic (ma) 0 0 200 100 300 400 500 20 40 60 80 100 duty cycle-collector characteristics (M54587p) 1 2 7 3 4 5 8 6
mar.2002 mitsubishi semiconductor M54587p/fp 8-unit 500ma darlington transistor array with clamp diode duty cycle (%) collector current ic (ma) 0 0 200 100 300 400 500 20 40 60 80 100 duty cycle-collector characteristics (M54587fp) 1 2 7 3 4 5 8 6 the collector cu rrent values represent the current per circuit. repeated frequency 10hz the value the circle represents the value of the simultaneously-operated circuit. vcc = 5v ta = 25 c duty cycle (%) collector current ic (ma) 0 0 200 100 300 400 500 20 40 60 80 100 duty cycle-collector characteristics (M54587fp) 1 2 7 3 4 5 8 6 the collector current values represent the current per circuit. repeated frequency 10hz the value the circle represents the value of the simultaneously-operated circuit. vcc = 5v ta = 75 c collector current i c (ma) dc amplification factor h fe dc amplification factor collector current characteristics 10 2 10 3 3 5 7 10 4 3 5 7 10 1 10 2 357 10 3 357 v cc = 5v v ce = 4v ta = 20 c ta = 25 c ta = 75 c supply voltage vcc (v) supply current icc (ma) 0246810 0 2 1 3 4 5 driver supply characteristics v i = 0v ta = 20 c ta = 25 c ta = 75 c iinput voltage vcc-v i (v) input current i i (ma) 012345 0 0.4 0.2 0.6 0.8 1.0 input characteristics v cc = 5v ta = 20 c ta = 25 c ta = 75 c input voltage vcc-v i (v) collector current i c (ma) 0 0 200 100 300 400 500 1234 output current characteristics v cc = 4v v ce = 4v ta = 20 c ta = 25 c ta = 75 c
mar.2002 mitsubishi semiconductor M54587p/fp 8-unit 500ma darlington transistor array with clamp diode forward bias voltage v f (v) forward bias current i f (ma) 0 0 200 100 300 400 500 0.5 1.0 1.5 2.0 clamping diode characteristics ta = 20 c ta = 25 c ta = 75 c
|
