block-type 1000mw high power laser diode description the SLD304B is a high power laser diode mounted on a 3 3 5mm copper block. it is ideal for applications which require a minimal distance between the laser facet and external optical parts. features compact size 3 3 5mm block high power output po = 1000mw hole for thermistor applications solid state laser excitation medical use structure gaalas double hetero-type laser diode operating lifetime mttf 10,000h (effective value) at po = 900mw, tc= 25? absolute maximum ratings (tc = 15?) optical power output pomax 1000 mw recommended optical power output po 900 mw reverse voltage v r ld 2 v operating temperature topr ?0 to +30 ? storage temperature tstg ?0 to +85 ? warranty reliability assurance does not apply to this product. pin configuration ?1 e89106d19-ps sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustr ating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. SLD304B no. 1 2 function ld cathode ld anode 2 ld anode 1 ld cathode m-261
2 SLD304B electrical and optical characteristics (tc = 15 c) item symbol conditions min. typ. max. unit threshold current operating current operating voltage wavelength radiation angle (f. w. h. m. ? ) positional accuracy differential efficiency ith iop vop p ? // ? x ? y, ? z ?? d p o = 900mw p o = 900mw p o = 900mw p o = 900mw p o = 900mw p o = 900mw 770 0.5 550 1600 2.2 28 13 0.8 700 2000 3.0 840 40 17 300 100 3 ma ma v nm degree m degree mw/ma perpendicular to junction parallel to junction position angle ? f. w. h. m. : full width at half maximum
3 SLD304B example of representative characteristics threshold current vs. temperature characteristics tc case temperature [ c] 10 0 20 10 30 100 1000 500 ith threshold current [ma] optical power output vs. forward current if forward current [ma] 0 500 1000 1500 2000 0 500 1000 p o optical power output [mw] tc = 10 c tc = 0 c tc = 25 c tc = 15 c tc = 30 c 780 810 830 800 790 820 p oscillation wavelength [nm] oscillation wavelength vs. temperature characteristics tc case temperature [ c] 100 10203040 p o = 900mw 0 0.5 1.0 d differential efficiency [mw/ma] differential efficiency vs. temperature characteristics tc case temperature [ c] 100 10203040 power dependence of far field pattern angle [degree] 30 20 100 102030 radiation intensity (optional scale) tc = 15 c p o = 900mw p o = 500mw p o = 200mw p o = 50mw power dependence of near field pattern 200 m radiation intensity (optional scale) tc = 15 c p o = 600mw p o = 400mw p o = 200mw p o = 900mw p o = 800mw (parallel to junction)
4 SLD304B 0.1 0.5 1.0 5.0 10 cod output [w] pulse width dependence of cod ? power pulse width [ s] 0.1 1.0 5.0 0.5 10 50 100 duty = 10% t c = 15 c power dependence of polarization ratio po optical power output [mw] 0 200 400 600 800 1000 1200 t c = 15 c 0 100 300 200 polarization ratio 0 2 7 6 4 3 1 5 po optical power output [w] optical power output vs. operating current iop operating current [a] 0246 1357 pulse width = 1 s duty = 10% tc = 15 c pulse cw ? cod (catastrophic optical damage)
5 SLD304B wavelength [nm] 800 810 805 reletive radiant intensity tc = 15 c po = 200mw wavelength [nm] 800 810 805 reletive radiant intensity tc = 15 c po = 400mw wavelength [nm] 800 810 805 reletive radiant intensity tc = 15 c po = 600mw wavelength [nm] 800 810 805 reletive radiant intensity tc = 15 c po = 800mw wavelength [nm] 800 810 805 reletive radiant intensity tc = 15 c po = 1000mw power dependence of wavelength
6 SLD304B wavelength [nm] 795 815 805 reletive radiant intensity tc = 5 c wavelength [nm] 795 815 805 reletive radiant intensity tc = 0 c wavelength [nm] 795 815 805 reletive radiant intensity tc = 10 c wavelength [nm] 795 815 805 reletive radiant intensity tc = 5 c wavelength [nm] 795 815 805 reletive radiant intensity tc = 15 c wavelength [nm] 795 815 805 reletive radiant intensity tc = 20 c temperature dependence of wavelength (p o = 90mw)
7 SLD304B notes on operation care should be taken for the following points when using this product. (1) this product corresponds to a class 4 product under iec60825-1 and jis standard c6802 "laser product emission safety standards". (2) eye protection against laser beams take care not to allow laser beams to enter your eyes under any circumstances. for observing laser beams, always use safety goggles that block laser beams. usage of ir scopes, ir cameras and fluorescent plates is also recommended for monitoring laser beams safely. (3) gallium arsenide this product uses gallium arsenide (gaas). this is not a problem for normal use, but gaas vapors may be potentially hazardous to the human body. therefore, never crush, heat to the maximum storage temperature or higher, or place the product in your mouth. in addition, the following disposal methods are recommended when disposing of this product. 1. engaging the services of a contractor certified in the collection, transport and intermediate treatment of items containing arsenic. 2. managing the product through to final disposal as specially managed industrial waste which is handled separately from general industrial waste and household waste. (4) prevention of surge current and electrostatic discharge laser diodes are most sensitive to electrostatic discharge among semiconductors. when a large current is passed through the laser diode for even an extremely short time, the strong light emitted from the laser diode promotes deterioration and then destruction of the laser diode. therefore, note that surge current should not flow to the laser diode driving circuit from switches and others. also, if the laser diode is handled carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human body. therefore, be extremely careful about overcurrent and electrostatic discharge. (5) use for special applications this product is not designed or manufactured for use in equipment used under circumstances where failure may pose a risk to life and limb, or result in significant material damage, etc. consult your sony sales representative when investigating use for medical, vehicle, nuclear power control or other special applications. also, use the power supply that was designed not to exceed the optical power output specified at the absolute maximum ratings. laser radiation avoid eye or skin exposure to direct or scattered radiation laser diode laser diode avoid exposure laser radiation is emitted from this aperture. this product complies with 21 cfr part 1040.10 and 1040.11 sony corporation 6-7-35 kitashinagawa, shinagawa-ku,tokyo 141-0001 japan maximum output over 1 w wavelength 600 - 950 nm class iv laser product
8 SLD304B package outline unit: mm m-261 sony code eiaj code jedec code package structure m-261 5.0 0.1 1.5 for thermistor 3.0 0.1 1.5 ld chip ceramic contact plate (ld cathode) body (ld anode) 1.0 1.5 0.2 0.3 1.7 1.8 0.2 3.0 0.1 package mass 1g sony corporation
|
