wtpb wtpb wtpb wtpb 4 4 4 4 a a a a 60 60 60 60 sw sw sw sw jan 200 9 . rev. 0 cop yright @winsemi semiconductor co.,ltd.,all rights reserved. t02-1 bi-directional bi-directional bi-directional bi-directional triode triode triode triode thyristor thyristor thyristor thyristor features repetitive peak off-state voltage : 600v r.m.s on-state current ( it(rms)= 4 a ) low on-state voltage (1.6v(typ.) @ i tm ) high commutation dv/dt high junction t emperature (t j =150 ) general description s tandard gate triggering triac is suitable for direct coupling to t t l, htl, cmos a n d applic atio n s u c h a s va ri ou s l o gic fu n ctio n s , l ow pow er a c switchi ng a pplic a ti o ns , s u c h a s fa n sp e ed , smal l li g h t c o ntr o lle rs a n d ho me a p plia n c e e q uip m ent . absolute maximum ratings ( t j = 25 c unless otherwise specified ) thermal characteristics s y mbol para m e ter c o n diti on ratin g s uni t s v drm /v rrm repetitive pe a k o f f- s t ate v o l t a g e 600 v i t(rms) r.m.s o n- s t ate c urre n t t j = 1 10 c 4.0 a i tsm surge on - s t ate cur r ent one cycle, peak value, non- repetitiv e full cycle 50hz 30 a 60hz 31 i 2 t i 2 t 5.1 a 2 s p gm peak ga t e power d i ssi p ation 5 w p g( a v ) a v e r age gate power dissi p a tion t j = 1 25 c 1 w i gm peak ga t e cur r ent t j = 1 25 c 4 .0 a v gm peak ga t e v ol t age 7.0 v t j operating junction t empe r ature -40~ + 1 50 t stg s t o rage t empe r ature - 40~ + 150 symbol parameter value units r j c thermal resistance junction to case(dc) 2.6 /w r j a thermal resistance junction to ambient (dc) 60 /w www.datasheet.in
w w w w tpb tpb tpb tpb 4 4 4 4 a a a a 60 60 60 60 sw sw sw sw 2 / 5 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance . . . . electrical characteristics (t c =25 unless otherwise noted) note 1: minimum igt is guaranted at 5% of igt max. 2: for both polarities of a2 referenced to a1 . symbol characteristics min typ. max unit i drm /i rrm off-state leakage current (v ak = v drm /v rrm single phase, half wave ) t j =25 - - 5 a t j =125 - - 1 ma v tm forward on v oltage ( i t =5a, inst. measurement ) - 1.2 1. 6 v i gt gate t rigger c urrent ( c ontinuous dc) (v ak = 6 vdc, rl = 10 ) note:1 t2+,g+ - - 35 m a t2+,g- - - 35 t2-,g- - - 35 v gt gate trigger voltage (continuous dc) ) (v ak = 6 vdc, rl = 10 ) note:1 t2+,g+ - - 1.5 v t2+,g- - - 1.5 t2-,g- - - 1.5 v gd gate threshold v oltage =1/2 v drm , rl = 3.3k t j =125 0.2 - - v dv/dt critical rate of rise of off-state voltage at commutation ( v d =0.67v drm ; gate open ) note:2 t j =125 40 - - v/ s i h holding current - - 15 ma i l latching current - - 30 ma www.datasheet.in
w w w w tpb tpb tpb tpb 4 4 4 4 a a a a 60 60 60 60 sw sw sw sw 3 / 5 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance . . . . www.datasheet.in
w w w w tpb tpb tpb tpb 4 4 4 4 a a a a 60 60 60 60 sw sw sw sw 4 / 5 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance . . . . www.datasheet.in
w w w w tpb tpb tpb tpb 4 4 4 4 a a a a 60 60 60 60 sw sw sw sw 5 / 5 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance . . . . to to to to 220 220 220 220 package package package package dimension dimension dimension dimension unit: unit: unit: unit: mm mm mm mm www.datasheet.in
|
