View IRF630BTSTUFP001_5820585.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

?2002 fairchild semiconductor corporation rev. b, december 2002 irf630b/irfs630b irf630b/irfs630b 200v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switching dc/dc converters, switch mode power supplies, dc-ac converters for uninterrupted power supply and motor control. features 9.0a, 200v, r ds(on) = 0.4 ? @v gs = 10 v low gate charge ( typical 22 nc) low crss ( typical 22 pf) fast switching 100% avalanche tested improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted * drain current limited by maximum junction temperature. thermal characteristics symbol parameter irf630b irfs630b units v dss drain-source voltage 200 v i d drain current - continuous (t c = 25c) 9.0 9.0 * a - continuous (t c = 100c) 5.7 5.7 * a i dm drain current - pulsed (note 1) 36 36 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 160 mj i ar avalanche current (note 1) 9.0 a e ar repetitive avalanche energy (note 1) 7.2 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25c) 72 38 w - derate above 25c 0.57 0.3 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter irf630b irfs630b units r jc thermal resistance, junction-to-case max. 1.74 3.33 c / w r cs thermal resistance, case-to-sink typ. 0.5 -- c / w r ja thermal resistance, junction-to-ambient max. 62.5 62.5 c / w to-220 irf series g s d s d g to-220f irfs series g s d
rev. b, december 2002 irf630b/irfs630b (note 4) (note 4, 5) (note 4, 5) (note 4) ?2002 fairchild semiconductor corporation electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 3mh, i as = 9.0a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 9.0a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 200 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.2 -- v/c i dss zero gate voltage drain current v ds = 200 v, v gs = 0 v -- -- 10 a v ds = 160 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.5 a -- 0.34 0.4 ? g fs forward transconductance v ds = 40 v, i d = 4.5 a -- 7.05 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 550 720 pf c oss output capacitance -- 85 110 pf c rss reverse transfer capacitance -- 22 29 pf switching characteristics t d(on) turn-on delay time v dd = 100 v, i d = 9.0 a, r g = 25 ? -- 11 30 ns t r turn-on rise time -- 70 150 ns t d(off) turn-off delay time -- 60 130 ns t f turn-off fall time -- 65 140 ns q g total gate charge v ds = 160 v, i d = 9.0 a, v gs = 10 v -- 22 29 nc q gs gate-source charge -- 3.6 -- nc q gd gate-drain charge -- 10.2 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 9.0 a i sm maximum pulsed drain-source diode forward current -- -- 36 a v sd drain-source diode forward voltage v gs = 0 v, i s = 9.0 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 9.0 a, di f / dt = 100 a/ s -- 140 -- ns q rr reverse recovery charge -- 0.87 -- c
rev. b, december 2002 ?2002 fairchild semiconductor corporation irf630b/irfs630b 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 4 8 12 16 20 24 0 2 4 6 8 10 12 v ds = 100v v ds = 40v v ds = 160v note : i d = 9.0 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 500 1000 1500 c oss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c iss capacitance [pf] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v]
?2002 fairchild semiconductor corporation rev. b, december 2002 irf630b/irfs630b 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 s 1 ms dc 100 ms 10 ms operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 4.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown vol tage t j , junction temperature [ o c] typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9-1. maximum safe operating area for irf630b figure 10. maximum drain current vs case temperature figure 9-2. maximum safe operating area for irfs630b
rev. b, december 2002 ?2002 fairchild semiconductor corporation irf630b/irfs630b typical characteristics (continued) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 1.74 /w m ax. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al r esponse t 1 , square w ave pulse duration [sec] figure 11-1. transient thermal response curve for irf630b t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 3.33 /w m ax. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) sin g le p u lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), t herm al r esponse t 1 , square w ave pulse duration [sec] figure 11-2. transient thermal response curve for irfs630b t 1 p dm t 2
rev. b, december 2002 ?2002 fairchild semiconductor corporation irf630b/irfs630b charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
?2002 fairchild semiconductor corporation rev. b, december 2002 irf630b/irfs630b peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
rev. b, december 2002 ?2002 fairchild semiconductor corporation irf630b/irfs630b package dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters
rev. b, december 2002 ?2002 fairchild semiconductor corporation irf630b/irfs630b package dimensions (continued) dimensions in millimeters (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 0.05 to-220f
?2002 fairchild semiconductor corporation disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i1 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? implieddisconnect? isoplanar? littlefet? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? silent switcher ? smart start? spm? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet ? vcx? acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? across the board. around the world.? the power franchise? programmable active droop?
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging irf630b 200v n-channel b-fet / substitute of irf630 & irf630a general description back to top features back to top contents ? general description ? features ? product status/pricing/packaging ? order samples ? qualification support these n-channel enhancement mode pow er field effect transistors are produced using fairchild?s proprietary, planar, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switchin g performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high ef ficiency switching dc/dc converters , switch mode power supplies, dc-ac converters for uninterrupted power supply and motor control. z 9.0a, 200v, r ds(on) = 0.4 ? @v gs = 10v z low gate charge (typical 22 nc) z low crss (typical 15 pf) z fast switching z 100% avalanche tested z improved dv/dt capability datasheet download this datasheet e - mail this datasheet this page print version related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 2 product folder - fairchild p/n ir f630b - 200v n-channel b-fet / substitute of irf630 & irf630a 17-au g -2007 mhtml:file://c:\temp\irf630b _ fp001.mht
back to top qualification support click on a product for detailed qualification data back to top product product status pb-free status package type leads packing method package marking convention** irf630btstu_fp001 not recommended for new designs to - 220 3 rail line 1: $y (fairchild logo) & z (asm. plant code) & 4 (4-digit date code) line 2: irf line 3: 630b irf630b_fp001 not recommended for new designs to - 220 3 rail line 1: $y (fairchild logo) & z (asm. plant code) & 4 (4-digit date code) line 2: irf line 3: 630b indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product irf630b is available. click here for more information . product irf630btstu_fp001 irf630b_fp001 ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 2 of 2 product folder - fairchild p/n ir f630b - 200v n-channel b-fet / substitute of irf630 & irf630a 17-au g -2007 mhtml:file://c:\temp\irf630b _ fp001.mht

▲Up To Search▲

Price & Availability of IRF630BTSTUFP001

	To Download IRF630BTSTUFP001 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .