unisonic technologies co., ltd uf830z power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2011 unisonic technologies co., ltd qw-r502-612.a 4.5a, 500v, 1.5 , n-channel power mosfet ? description the n-channel enhancement mode silicon gate power mosfet is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers. ? features * v ds = 500v * i d = 4.5a * r ds(on) =1.5 ? * single pulse avalanche energy rated * rugged- soa is power dissipation limited * fast switching speeds * linear transfer characteristics * high input impedance * esd protected ? symbol 1.gate 3.sourc e 2.drai n 1 to-220f ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UF830ZL-TF3-T uf830zg-tf3-t to-220f g d s tube
uf830z power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-612.a ? absolute maximum ratings ( ta = 25c, unless otherwise specified.) parameter symbol ratings unit drain to source voltage (t j =25c ~125c) v ds 500 v drain to gate voltage (r gs =20k ? , t j =25c ~125c) v dgr 500 v gate to source voltage v gs 30 v continuous i d 4.5 a drain current pulsed i dm 18 a power dissipation (t c = 25c) p d 38 w single pulse avalanche energy rating (note 2) e as 300 mj junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. v dd =50v, starting t j =25c, l=25mh, r g =25 ? , peak i as =4.5a ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 3.31 c/w ? electrical specifications (ta =25c, unless otherwise specified.) parameter symbol test conditions min typ max unit drain-source breakdown voltage bv dss i d =250 a, v gs =0v 500 v gate threshold voltage v gs(th) v gs =v ds , i d =250 a 2.0 4.0 v on-state drain current (note 1) i d(on) v ds >i d(on) r ds(on)max , v gs =10v 4.5 a v ds = rated bv dss , v gs =0v 25 a drain-source leakage current i dss v ds =0.8rated bv dss v gs =0v, t j = 125c 250 a gate-source leakage current i gss v gs =30v 800 na static drain-source on-state resistance (note 2) r ds(on) i d =2.5a, v gs =10v 1.3 1.5 ? forward transconductance (note 1) g fs v ds 10v, i d =2.7a 2.5 4.2 s turn-on delay time t d(on) 10 17 ns turn-on rise time t r 15 23 ns turn-off delay time t d(off) 33 53 ns turn-off fall time t f v dd =250v, i d 4.5a r gs =12 ? , r l =54 ? (note 2) 16 23 ns total gate charge q g 22 32 nc gate-source charge q gs 3.5 nc gate-drain charge q gd v gs =10v, i d =4.5a v ds =0.8rated bv dss i g(ref) =1.5ma (note 3) 11 nc input capacitance c iss 600 pf output capacitance c oss 100 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mhz 20 pf note: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. mosfet switching times are essentia lly independent of oper ating temperature. 3. gate charge is essentially i ndependent of operat ing temperature.
uf830z power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-612.a ? internal package inductance parameter symbol min typ max unit internal drain inductance measured from the contact screw on tab to center of die 3.5 nh measured from the drain lead(6mm from package) to center of die l d 4.5 nh internal source inductance measured from the source lead(6mm from header) to source bond pad l s 7.5 nh remark: modified mosfet symbol showing the internal devices inductances as below. ? source to drain diode specifications parameter symbol test conditions min typ max unit source to drain diode voltage (note 1) v sd t j =25c, i sd =4.5a, v gs =0v 1.6 v continuous source to drain current i sd 5.5 a pulse source to drain current i sdm note 2 18 a reverse recovery time t rr t j =25c, i sd =4.5a, di/dt=100a/ s 180 350 760 ns reverse recovery charge q rr t j =25c, i sd =4.5a, di/dt=100a/ s 0.96 2.2 4.3 c note : 1. pulse test: pulse width 300 s, duty cycle 2%. 2. modified mosfet symbol showing the integral reverse p-n junction diode as below. g s d
uf830z power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-612.a ? test circuits and waveforms v gs t p r g i as dut 0.01 ? v ds l + - v dd 0v vary tp to obtain required peak i as fig 1. unclamped energy test circuit fig 2. unclamped energy waveforms v gs r g dut r l + - v dd fig 3. switching time test circuit
uf830z power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-612.a ? test circuits and waveforms (cont.) t on t dly(on) t r 90% 10% 0 v ds t dly(off) t off t f 90% 10% 90% 50% 50% v gs 0 10% pulse width fig 4. resistive switching waveforms fig 5. gate charge test circuit fig 6. gate charge waveforms
uf830z power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-612.a ? typical characteristics 0 case temperature, t c (c) 50 100 150 1.2 normalized power dissipation vs. case temperature 1.0 0.6 0.2 0 0.4 0.8 case temperature,t c (c) 75 100 150 maximum contionuous drain current vs. case temperature 0 125 50 25 1 2 3 4 5 0.01 rectangular pulse duration, t 1 (s) normalized maximum transient thermal impedance 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 single pulse 0.2 0.1 0.01 0.1 1 p dm t1 t2 0.05 0.02 0.5 100 10 0.1 drain to source voltage, v ds (v) forward bias safe operating area 10 2 10 1 1 1 m s 10 3 operation in this region is limited by r ds (on) 100m s 1 0m s 1 0 s t c =25c t j =max rated single pulse 1 0 0 s d c drain to source voltage, v ds (v) 100 150 300 output characteristics 0 250 50 0 1 3 4 5 6 v gs =10v v gs =5.5v v gs =4.0v v gs =4.5v v gs =5.0v pulse duration=80 s duty cycle = 0.5% max 200 2 drain to source voltage, v ds (v) 4 6 10 saturation characteristics 0 8 2 0 1 2 3 4 5 v gs =10v v gs =5.5v v gs =5.0v v gs =4.5v v gs =4.0v pulse duration=80 s duty cycle = 0.5% max *notes: duty factor, d=t1/t2 peak t j =p dm z jc r jc +t c
uf830z power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-612.a ? typical characteristics (cont.) drain to source current, i ds (on) (a) gate to source voltage, v gs (v) 2 5 7 transfer characteristics 0 6 1 0 1 2 3 4 5 4 3 t j = 25c t j = -40c t j = 125c drain to source on resistance, r ds (on) ( ? ) case temperature, t c (c) 4 16 20 drain to source on resistance vs. gate voltage and drain current 0 0 2 12 v gs =10v v gs =20v 8 4 6 8 10 pulse duration=80 s duty cycle = 0.5% max pulse duration=80 s duty cycle = 0.5% max v ds > i d(on) r ds(on)max normalized drain to source on resistance junction temperature, t j (c) 0 80 normalized drain to source on resistance vs. junction temperature 0.2 120 -40 0.6 1.0 1.4 1.8 2.2 40 pulse duration=80 s duty cycle = 0.5% max v gs =10v, i d =2.5a 140 100 60 20 -20 -60 normalized drain to source breakdown voltage junction temperature, t j (c) 0 80 normalized drain to source breakdown voltage vs. junction temperature 0.75 160 -40 1.25 40 120 0.85 0.95 1.05 1.15 140 100 60 20 -20 i d =250 a capacitance vs. drain to source voltage capacitance, c (pf) drain to source voltage, v ds (v) 0 1 400 800 2000 20 c iss 50 1600 1200 10 30 30 v gs =0v, f=1mhz c iss =c gs +c gd c rss =c gd c oss =c ds +c gs c rss c oss transconductance, g fs (s) drain current, i d (a) 2 35 transconductance vs. drain current 0 4 1 0 1 2 3 4 5 t j = -40c t j = 25c t j = 125c pulse duration=80 s duty cycle = 0.5% max
uf830z power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-612.a ? typical characteristics (cont.) source to drain current, i sd (a) gate to source voltage, v gs (v) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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