november 2004 ? 2004 fairchild semiconductor corporation FDJ1028N rev b1 (w) FDJ1028N n-channel 2.5 vgs specified powertrench ? mosfet general description this dual n-channel 2.5v specified mosfet uses fairchild?s advanced low voltage powertrench process. packaged in flmp sc75, the r ds(on) and thermal properties of the device are optimized for battery power management applications. applications ? battery management features ? 3.2 a, 20 v. r ds(on) = 90 m ? @ v gs = 4.5 v r ds(on) = 130 m ? @ v gs = 2.5 v ? low gate charge ? high performance trench technology for extremely low r ds(on) ? flmp sc75 package: enhanced thermal performance in industry-standard package size 3 2 1 4 5 6 bottom drain contact bottom drain contact q2 q1 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 20 v v gss gate-source voltage 12 v i d drain current ? continuous (note 1a) 3.2 a ? pulsed 12 p d power dissipation for single operation (note 1a) 1.5 w t j , t stg operating and storage junction temperature range ? 55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 80 r jc thermal resistance, junction-to-case 5 c/w package marking and ordering information device marking device reel size tape width quantity .f FDJ1028N 7?? 8mm 3000 units FDJ1028N s1 s2 g2 g1 s1 s2 s1 s2 g2 g1 s1 s2 sc75 dual flmp
FDJ1028N rev b1 (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 13 mv/ c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 a i gss gate?body leakage v gs = 12 v, v ds = 0 v 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 0.6 1.0 1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c ?3 mv/ c r ds(on) static drain?source on?resistance v gs = 4.5 v, i d = 3.2 a v gs = 2.5 v i d = 2.7 a v gs = 4.5 v, i d = 3.2a,t j =125 c 70 100 83 90 130 132 m ? g fs forward transconductance v ds = 5 v, i d = 3.2 a 7.5 s dynamic characteristics c iss input capacitance 200 pf c oss output capacitance 50 pf c rss reverse transfer capacitance v ds = 10 v, v gs = 0 v, f = 1.0 mhz 30 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 10 ? switching characteristics (note 2) t d(on) turn?on delay time 7 14 ns t r turn?on rise time 8 16 ns t d(off) turn?off delay time 11 20 ns t f turn?off fall time v dd = 10 v, i d = 1 a, v gs = 4.5 v, r gen = 6 ? 2 4 ns q g total gate charge 2 3 nc q gs gate?source charge 0.4 nc q gd gate?drain charge v ds = 10 v, i d = 3.2 a, v gs = 4.5 v 1.0 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 1.25 a v sd drain?source diode forwardvoltage v gs = 0 v, i s = 1.25 a (note 2) 0.8 1.2 v t rr diode reverse recovery time 11 ns q rr diode reverse recovery charge i f = 3.2 a, d if /d t = 100 a/s 2.5 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 80c/w when mounted on a 1in 2 pad of 2 oz copper (single operation). b) 140c/w when mounted on a minimum pad of 2 oz copper (single operation). scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDJ1028N
FDJ1028N rev b1 (w) typical characteristics 0 2 4 6 8 10 12 00.511.522.53 v ds , drain-source voltage (v) i d , drain current (a) 3.0v 2.5v 3.5v v gs = 4.5v 2.0v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 2 4 6 8 10 12 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.5v 4.0v 3.5v 3.0v 4.5v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 3.2a v gs = 4.5v 0.04 0.08 0.12 0.16 0.2 0.24 0.28 12345 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 1.6a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 2 4 6 8 10 11.522.533.5 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDJ1028N
FDJ1028N rev b1 (w) typical characteristics 0 2 4 6 8 10 00.511.522.533.544.5 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 3.2a v ds = 5v 15v 10v 0 50 100 150 200 250 300 0 5 10 15 20 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 100ms r ds(on) limit v gs = 4.5v single pulse r ja = 140 o c/w t a = 25 o c 10ms 1ms 1s 100s 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 140c/w t a = 25c figure 9. maximum safe operating ar ea. figure 10. single pulse maximum power dissipation. 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 140 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions describ ed in note 1b. transient themal response will change depending on the circuit board design. FDJ1028N
FDJ1028N rev b1 (w) dimensional outline and pad layout top view FDJ1028N
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