050-7448 rev a 7-2004 APT15GP60BSC typical performance curves the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? 100 khz operation @ 400v, 19a ? low gate charge ? 200 khz operation @ 400v, 13a ? ultrafast tail current shutoff ? ssoa rated maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 600 3 4.5 6 2.2 2.7 2.1 500 3000 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 500a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts a na symbol v ces v ge v gem i c1 i c2 i cm ssoa p d t j ,t stg t l APT15GP60BSC 600 20 30 56 27 65 65a @ 600v 250 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 25c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. to-247 g c e power mos 7 ? igbt g c e APT15GP60BSC 600v
050-7448 rev a 7-2004 APT15GP60BSC dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 15a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 600v inductive switching (25c) v cc = 400v v ge = 15v i c = 15a r g = 5 ? t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 15a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 min typ max 1685 210 15 7.5 55 12 15 65 9 13 31 55 tbd 55 115 9 13 70 85 tbd 70 275 unit pf v nc a ns j ns j unit c/w gm min typ max .50 1.1 5.90 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and silicon carbide schottky leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the specifications and information contained herein.
050-7448 rev a 7-2004 APT15GP60BSC typical performance curves v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 0 10 20 30 40 50 60 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 t j = 25c. 250s pulse test <0.5 % duty cycle t c =-55c t c =125c t c =25c v ce = 480v v ce = 300v v ce = 120v v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 15a t j = 25c t j = 25c t j = -55c t j = 125c t c =-55c t c =25c t c =125c 250s pulse test <0.5 % duty cycle i c = 7.5a i c = 15a i c =30a i c =30a i c = 7.5a 30 25 20 15 10 5 0 100 80 60 40 20 0 3.5 3 2.5 2 1.5 1 0.5 0 1.2 1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 30 25 20 15 10 5 0 16 14 12 10 8 6 4 2 0 3.5 3 2.5 2 1.5 1 0.5 0 80 70 60 50 40 30 20 10 0 i c = 15a
050-7448 rev a 7-2004 APT15GP60BSC v ce = 400v r g = 5 ? l = 100 h v ge = 15v v ge =15v,t j =125c v ce = 400v t j = 25c, t j =125c r g = 5 ? l = 100 h r g = 5 ? , l = 100 h, v ce = 400v r g = 5 ? , l = 100 h, v ce = 400v i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) 5101520253035 5101520253035 5 10 15 20 25 30 35 5 10 15 20 25 30 35 5101520253035 5101520253035 0 10 20 30 40 50 25 50 75 100 125 v ge =15v,t j =25c 80 70 60 50 40 30 20 10 0 100 80 60 40 20 0 700 600 500 400 300 200 100 0 700 600 500 400 300 200 100 0 t j = 125c, v ge = 15v v ce = 400v v ge = +15v r g = 5 ? v ce = 400v v ge = +15v r g = 5 ? v ce = 400v v ge = +15v r g = 5 ? e on2, 30a e off, 30a e on2, 15a e off, 15a e on2, 7.5a e off, 7.5a e on2, 30a e off, 30a e on2, 15a e off, 15a e on2, 7.5a e off, 7.5a v ce = 400v v ge = +15v t j = 125 c t j = 125c,v ge = 15v t j = 25c, v ge = 15v t j = 25c,v ge = 15v 12 10 8 6 4 2 0 25 20 15 10 5 0 350 300 250 200 150 100 50 0 700 600 500 400 300 200 100 0 t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v
050-7448 rev a 7-2004 APT15GP60BSC typical performance curves 4,000 1,000 500 100 50 10 70 60 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 c ies c oes c res 0.60 0.50 0.40 0.30 0.20 0.10 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = figure 19b, transient thermal impedance model 285 100 50 10 1 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 5 ? 0.216 0.284 0.0060 0 0.164 power (watts) rc model junction temp. ( ?c) case temperature 51525354555
050-7448 rev a 7-2004 APT15GP60BSC figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit drain current drainvoltage gate voltage t j = 125c 10% switching energy 10% t r 5% t d(on) 90% 5% 90% 90% t d(off) 0 10% t f drainvoltage drain current gate voltage switching energy t j = 125c i c a d.u.t. apt10sc60 v ce figure 21, inductive switching test circuit v cc
050-7448 rev a 7-2004 APT15GP60BSC typical performance curves silicon carbide schottky rectifier diode characteristic / test conditions maximum average forward current (t c = 130c, duty cycle = 0.5) rms forward current non-repetitive forward surge current ( t j = 25c, t p = 10 s ) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 15a forward voltage i f = 30a i f = 15a, t j = 175c static electrical characteristics unit amps unit volts min typ max 1.9 2.9 3.1 APT15GP60BSC 10 19 250 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise specified. min typ max - 50 -28 n/a n/a 50 symbol c q c t fr t rr dv / dt characteristic / test conditions capacitance (v r = 400v, t c = 25 c, f = 1 mhz) total capacitive charge (v r = 600v, i f = 20a, di f /dt = 500a/ s, t c = 25 c) forward recovery time 1 reverse recovery time 1 peak diode recovery (v r = 480v, di/dt = 1000a/ s, t c = 25 c) z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 25a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 1.20 1.10 0.80 0.60 0.40 0.20 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 figure 25b, transient thermal impedance model 0.688 c/w 0.412 c/w 0.00215 j/ c 0.0572 j/ c power (watts) rc model junction temp ( c) case temperature ( c) 1 as a majority carrier device, there is no reverse recovery charge. zero recovery tm , is a trademark of cree inc.
050-7448 rev a 7-2004 APT15GP60BSC i f , (av) forward current i f , forward current (a) (a) c j , junction capacitance i r , reverse current (pf) ( a) t j = 25 c t j = 75 c t j = 125 c t j = 175 c t j = -55 c t j =25 c v r = 400v t j = 25 c t j = 75 c t j = 125 c t j = 175 c 60 50 40 30 20 10 0 20 18 16 14 12 10 8 6 4 2 0 200 160 120 80 40 0 600 500 400 300 200 100 0 012345678 0 200 400 600 800 25 50 75 100 125 150 175 .3 1 10 100 400 t0-247 package outline 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) dimensions in millimeters and (inches) 2-plcs. collector (cathode) emitter (anode) gate collector (cathode) apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. v f , anode-to-cathode voltage (v) v r , cathode-to-anode voltage (v) figure 26. forward current vs. forward voltage figure 27. reverse current vs. reverse voltage case temperature ( c) v r , reverse voltage (v) figure 28. current derating figure 29. junction capacitance vs. reverse voltage
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