www.irf.com 1 IRG4PC50KD insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c v ces = 600v v ce(on) typ. = 1.84v @v ge = 15v, i c = 30a short circuit rated ultrafast igbt l short circuit rated ultrafast: optimized for high operating frequencies >5.0 khz, and short circuit rated to 10s @125c, v ge = 15v l generation 4 igbt design provides tighter parameter distribution and higher efficiency than generation 3 l igbt co-packaged with hexfred tm ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations l industry standard to-247ac package benefits l generation 4 igbts offer highest efficiencies available l hexfred diodes optimized for performance with igbts. minimized recovery characteristics require less/no snubbing l designed to be a "drop-in" replacement for equivalent industry-standard generation 3 ir igbts pd -91582b parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 52 i c @ t c = 100c continuous collector current 30 i cm pulsed collector current 104 a i lm clamped inductive load current 104 i f @ t c = 100c diode continuous forward current 25 i fm diode maximum forward current 280 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 200 p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) absolute maximum ratings w thermal resistance to-247ac parameter min. typ. max. units r q jc junction-to-case - igbt 0.64 r q jc junction-to-case - diode 0.83 c/w r q cs case-to-sink, flat, greased surface 0.24 r q ja junction-to-ambient, typical socket mount 40 wt weight 6 (0.21) g (oz) 12/3/98
IRG4PC50KD www.irf.com 2 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage a a a a a 600 v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage 0.47 v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage 1.84 2.2 i c = 30a v ge = 15v 2.19 v i c = 52a see figures 2, 5 1.79 i c = 25a, t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage -12 mv/c v ce = v ge , i c = 250a g fe forward transconductance ? ? ? ? ? 17 24 s v ce = 100v, i c = 30a i ces zero gate voltage collector current 250 a v ge = 0v, v ce = 600v 6500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop 1.3 1.7 v i c = 25a see figure 13 1.2 1.5 i c = 25a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) 200 300 i c = 30a q ge gate - emitter charge (turn-on) 25 38 nc v cc = 400v see figure 8 q gc gate - collector charge (turn-on) 85 127 v ge = 15v t d(on) turn-on delay time 63 t r rise time 49 t j = 25c t d(off) turn-off delay time 150 220 i c = 30a, v cc = 480v t f fall time 95 140 v ge = 15v, r g = 5.0 w e on turn-on switching loss 1.61 energy losses include "tail" e off turn-off switching loss 0.84 mj and diode reverse recovery e ts total switching loss 2.45 3.0see figures 9,10,18 t sc short circuit withstand time 10 s v cc = 360v, t j = 125c v ge = 15v, r g = 10 w , v cpk < 500v t d(on) turn-on delay time 61 t j = 150c, see figures 11,18 t r rise time 46 i c = 30a, v cc = 480v t d(off) turn-off delay time 310 v ge = 15v, r g = 5.0 w t f fall time 170 energy losses include "tail" e ts total switching loss 3.53 mj and diode reverse recovery l e internal emitter inductance 13 nh measured 5mm from package c ies input capacitance 3200 v ge = 0v c oes output capacitance 370 pf v cc = 30v see figure 7 c res reverse transfer capacitance 95 ? = 1.0mhz t rr diode reverse recovery time 50 75 ns t j = 25c see figure 105 160 t j = 125c 14 i f = 25a i rr diode peak reverse recovery current 4.5 10 a t j = 25c see figure 8.0 15 t j = 125c 15 v r = 200v q rr diode reverse recovery charge 112 375 nc t j = 25c see figure 420 1200 t j = 125c 16 di/dt 200a/s di (rec)m /dt diode peak rate of fall of recovery 250 a/s t j = 25c see figure during t b 160 t j = 125c 17 switching characteristics @ t j = 25c (unless otherwise specified) ns ns
IRG4PC50KD www.irf.com 3 0.1 1 10 100 0 5 10 15 20 25 30 35 f, frequency (khz) load current (a) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = w 60% of rated voltage i ideal diodes square wave: 40 fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j 1 10 100 1000 5 6 7 8 9 10 11 12 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j t = 150 c j 150c
IRG4PC50KD www.irf.com 4 fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 60 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 60 c i = a 30 c i = a 15 c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
IRG4PC50KD www.irf.com 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 60 c i = a 30 c i = a 15 c 0 10 20 30 40 50 2.0 2.5 3.0 3.5 4.0 4.5 g(o) total switching losses (mj) v = 480v v = 15v t = 25 c i = 30a cc ge j c fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature r g , gate resistance ( w ) 5.0 w fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage 1 10 100 0 1000 2000 3000 4000 5000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c res c oes c ies 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 30a cc c
IRG4PC50KD www.irf.com 6 fig. 14 - typical reverse recovery vs. di f /dt 20 40 60 80 100 120 140 100 1000 f di /dt - (a/s) t - (ns) rr i = 50a i = 25a i = 10a f f f v = 200v t = 125c t = 25c r j j 0 10 20 30 40 50 60 70 0 2 4 6 8 10 12 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 480v v = 15v g j cc ge 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current 5.0 w 1 10 100 0.6 1.0 1.4 1.8 2.2 2.6 fm f instantaneous forward current - i (a) forward volta g e drop - v (v) t = 150c t = 125c t = 25c j j j
IRG4PC50KD www.irf.com 7 fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 0 300 600 900 1200 1500 100 1000 f di /dt - (a/s) rr q - (nc) i = 10a i = 25a i = 50a f f f v = 200v t = 125c t = 25c r j j 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 50a i = 25a i = 10a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 10a i = 25a i = 50a f f f v = 200v t = 125c t = 25c r j j mechanical drawings, appendix a test circuit diagrams, appendix b switching loss waveforms, appendix c
IRG4PC50KD www.irf.com 8 same t y pe device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +v g 10% +v g 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vd ic dt vce ic dt ic dt t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% c i c e on e off ts on off e = (e +e ) v v ge
IRG4PC50KD www.irf.com 9 v g gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 800v 4 x i c @25c 0 - 800v figure 18e. macro waveforms for figure 18a's test circuit
IRG4PC50KD www.irf.com 10 dim ensions in m illim eters and (inches) conforms to jedec outline to-247ac (to-3p) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 2 3 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 dimensions & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 dimensions are show n millimeters (inches). 4 co n fo r m s to jed e c o utline to -247ac. lead assignments 1 - gate 2 - collector 3 - em it ter 4 - collector * longer leaded (20mm) version available (to-247ad) to order add "-e" suffix to part number case outline ? to-247ac notes: ? repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) ? v cc =80%(v ces ) , v ge =20v, l=10h, r g = 5.0 w (figure 19) ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 12/98
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