ech8660 no. a1358-1/6 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. features ? the ech8660 incorporates an n-channel mosfet and a p-channel mosfet that feature low on-resistance and high-speed switching , thereby enablimg high-density mounting ? 4v drive ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 30 --30 v gate-to-source voltage v gss 20 20 v drain current (dc) i d 4.5 --4.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 30 --30 a allowable power dissipation p d when mounted on ceramic substrate (1200mm 2 0.8mm) 1unit 1.3 w total dissipation p t when mounted on ceramic substrate (1200mm 2 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v marking : tf continued on next page. ordering number : ena1358a d2210 tkim/n1908pe msim tc-00001695 sanyo semiconductors data sheet ech8660 n-channel and p-channel silicon mosfets general-purpose switching device applications http://semicon.sanyo.com/en/network
ech8660 no. a1358-2/6 continued from preceding page. parameter symbol conditions ratings unit min typ max forward transfer admittance | yfs | v ds =10v, i d =2a 1 1.66 s static drain-to-source on-state resistance r ds (on)1 i d =2a, v gs =10v 45 59 m 1 r ds (on)2 i d =1a, v gs =4.5v 85 119 m 1 r ds (on)3 i d =1a, v gs =4v 110 155 m 1 input capacitance ciss v ds =10v, f=1mhz 240 pf output capacitance coss v ds =10v, f=1mhz 45 pf reverse transfer capacitance crss v ds =10v, f=1mhz 30 pf turn-on delay time t d (on) see speci ed test circuit. 6.2 ns rise time t r see speci ed test circuit. 11 ns turn-off delay time t d (off) see speci ed test circuit. 17 ns fall time t f see speci ed test circuit. 7.5 ns total gate charge qg v ds =10v, v gs =10v, i d =4.5a 4.4 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =4.5a 1.1 nc gate-to-drain ?miller? charge qgd v ds =10v, v gs =10v, i d =4.5a 0.64 nc diode forward voltage v sd i s =4.5a, v gs =0v 0.84 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 + a gate-to-source leakage current i gss v gs =?6v, v ds =0v ?0 + a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.3 v forward transfer admittance | yfs | v ds =--10v, i d =--2a 2.5 4.2 s static drain-to-source on-state resistance r ds (on)1 i d =--2a, v gs =--10v 45 59 m 1 r ds (on)2 i d =--1a, v gs =--4.5v 71 100 m 1 r ds (on)3 i d =--1a, v gs =--4v 82 115 m 1 input capacitance ciss v ds =--10v, f=1mhz 430 pf output capacitance coss v ds =--10v, f=1mhz 105 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 75 pf turn-on delay time t d (on) see speci ed test circuit. 7.5 ns rise time t r see speci ed test circuit. 26 ns turn-off delay time t d (off) see speci ed test circuit. 45 ns fall time t f see speci ed test circuit. 35 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--4.5a 10 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--4.5a 2.0 nc gate-to-drain ?miller? charge qgd v ds =--10v, v gs =--10v, i d =--4.5a 2.5 nc diode forward voltage v sd i s =--4.5a, v gs =0v --0.85 --1.2 v
ech8660 no. a1358-3/6 package dimensions electrical connection unit : mm (typ) 7011a-001 switching time test circuit [n-channel] [p-channel] 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view 87 6 5 1234 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 top view pw=10 + s d.c. ) 1% p. g 50 1 g s d i d =2a r l =7.5 1 v dd =15v v out v in 10v 0v v in ech8660 pw=10 + s d.c. ) 1% p. g 50 1 g s d i d = --2a r l =7.5 1 v dd = --15v v out v in 0v --10v v in ech8660 i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a [nch] [nch] 0 1.5 0.5 2.5 3.0 1.0 2.0 3.5 4.0 0 0 it14210 it14211 0.1 0.4 0.2 0.6 0.5 0.3 0.8 0.7 0.9 1.0 0 1 2 3 4 5 1 4 2 5 3 6 v ds =10v --25 c ta=75 c v gs =3.0v 3. 5v 4.0v 25 c 4.5v 15.0v 6.0v 10.0v
ech8660 no. a1358-4/6 gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m 1 ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m 1 i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf a s o drain-to-source voltage, v ds -- v drain current, i d -- a 2 2 3 5 7 0.1 2 3 5 7 1.0 0.01 0.1 2 1.0 57 32 10 57 3235 operation in this area is limited by r ds (on). 100ms dc operation (ta=25 c) 10ms 2 3 5 7 3 5 7 10 i dp =30a i d =4.5a 100 + s 1ms [nch] [nch] [nch] [nch] [nch] [nch] [nch] [nch] pw ) 10 + s ta=25 c single pulse when mounted on ceramic substrate (1200mm 2 0.8mm) it14195 0.2 0.4 0.6 1.2 1.0 0.8 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 7 5 3 --60 --40 --20 0 20 40 60 80 100 120 140 160 0 40 80 160 200 120 v gs =4.0v, i d =1a v gs =10. 0v, i d =2a v gs =4.5v, i d =1a it16223 ta=25 c it14213 it14214 it14215 ta= --25 c 75 c 25 c v ds =10v --25 c 25 c ta=75 c v gs =0v 10 1.0 7 5 3 7 5 3 2 2 0.1 2 1.0 357 it14216 v dd =15v v gs =10v t d (off) t r t f 10 23 57 t d (on) i d =1a 2a 0 2 10 12 8 6 41416 0 40 80 160 120 240 200 0.1 2 2 5 3 1.0 7 5 3 2 0.01 0.1 2 57 32 1.0 57 357 3 0 100 10 7 5 3 5 3 2 2 30 5152025 10 it14217 f=1mhz ciss coss crss 012345 0 1 2 3 4 5 6 7 8 10 9 it14218 v ds =10v i d =4.5a
ech8660 no. a1358-5/6 gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m 1 ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m 1 i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf --0.2 --0.4 --0.6 --1.2 --1.0 --0.8 --0.01 --0.1 7 5 3 2 2 --1.0 7 5 3 2 --10 7 5 3 --60 --40 --20 0 20 40 60 80 100 120 140 160 0 20 100 60 40 80 140 160 120 v gs = - -4.0 v, i d = -- 1 a v gs = --10.0v, i d = --2a v gs = --4.5v, i d = --1a it16224 ta=25 c it14189 it14190 it14191 ta= --25 c 75 c 25 c v ds = --10v --25 c 25 c ta=75 c v gs =0v 10 100 7 5 3 7 5 3 2 --0.1 2 --1.0 357 it14192 v dd = --15v v gs = --10v t d (off) t r t f --10 23 57 t d (on) i d = --1a --2a 0 --2 --10 --12 -- 8 -- 6 --4 --14 --16 0 20 40 60 80 140 120 100 180 160 0.01 2 2 2 0.1 7 7 5 3 10 7 5 3 2 1.0 7 5 3 --0.01 2 --0.001 57 23 --0.1 2 57 32 --1.0 57 3 --10 57 3 0 100 1000 7 7 5 3 5 3 2 --30 --5 --15 --20 --25 --10 it14193 f=1mhz ciss coss crss [pch] [pch] [pch] [pch] [pch] [pch] [pch] [pch] i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 --1.5 --0.5 --2.5 --3.0 --1.0 --2.0 --3.5 --4.0 0 0 it14186 it14187 --0.1 --0.4 --0.2 --0.6 --0.5 --0.3 --0.8 --0.7 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 -- 1 -- 4 -- 2 -- 5 -- 3 -- 6 v ds = --10v --25 c ta=75 c v gs = --2.5v --3.0v --3.5v 25 c --4.0v --10.0v --4.5v --6.0v
ech8660 no. a1358-6/6 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of december, 2010. speci cations and information herein are subject to change without notice. note on usage : since the ech8660 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. it14197 it14196 p d -- ta allowable power dissipation, p d -- w 0 0 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 1.5 1.3 1unit total dissipation when mounted on ceramic substrate (1200mm 2 0.8mm) ambient temperature, ta -- c a s o drain-to-source voltage, v ds -- v drain current, i d -- a 2 2 3 5 7 --0.1 2 3 5 7 --1.0 --0.01 --0.1 2 --1.0 57 32 --10 57 3235 operation in this area is limited by r ds (on). 100ms dc operation (ta=25 c) 10ms 2 3 5 7 3 5 7 --10 i dp = -- 30a i d = --4.5a 100 + s 1ms [pch] [nch/pch] pw ) 10 + s ta=25 c single pulse when mounted on ceramic substrate (1200mm 2 0.8mm) total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v [pch] 01234 6 8 57 10 911 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 --10 -- 9 it14194 v ds = --10v i d = --4.5a
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