MP6T2 transistors rev.a 1/3 medium power transistor ( ? 32v, ? 2a) MP6T2 z applications low frequency amplifier z features 1) low v ce(sat) , v ce(sat) = ? 0.5v(typ.) (i c / i b = ? 2a / ? 0.2a) 2) contain two 2sb1188-dies in a package. z structure pnp silicon epitaxial planar transistor z dimensions (unit : mm) mpt6 (6) (5) (4) (1) (2) (3) z packaging specifications z inner circuit package code tr 1000 taping basic ordering unit(pieces) MP6T2 type z absolute maximum ratings (ta=25 c) parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current v cbo v ceo v ebo ? 40 v v v a a ? 32 ? 5 ? 2.0 i c i cp power dissipation junction temperature range of storage temperature p d tj tstg w / element w / total c c ? 2.5 2.0 1.4 continuous pulsed 150 ? 55 to + 150 symbol limits unit ? 1 pw=10ms 1 pulse ? 2 mounted on a ceramic board ? 1 ? 2 (1) (1) emitter (2) base (3) collector (4) emitter (5) base (6) collector (2) (3) (6) (5) (4)
MP6T2 transistors rev.a 2/3 fig.5 collector-emitter saturation voltage vs. collector current ( ) collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 ? 50 ? 100 ? 200 ? 500 ta = 25 c i c /i b = 50 20 10 z electrical characteristics (ta=25 c) parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cut off current emitter cut off current dc current gain collector-emitter saturation voltage transition frequency collector output capacitance symbol bv ceo bv cbo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ? 32 ? 40 ? 5 ? ? 120 ? ? ? ? ? ? ? ? ? ? 500 100 50 ? ? ? ? 1.0 ? 1.0 390 ? 800 ? ? ? v i c = ? 1ma i c = ? 50 a i e = ? 50 a v cb = ? 20v v eb = ? 4v v ce = ? 3v, i c = ? 500ma i c /i b = ? 2.0a/ ? 200ma v ce = ? 5v, i e = 500ma, f = 100mhz v cb = ? 10v, i e = 0a, f = 1mhz v v a a ? mv mhz pf typ. max. unit conditions ? pulsed z electrical characteristics curves fig.1 grounded emitter propagation characteristics base to emitter voltage : v be (v) collector current : i c (ma) 0 ? 0.2 ? 0.6 ? 0.8 ? 1.0 ? 1.2 ? 1.4 ? 1.6 ? 1.8 ? 2.0 ? 2.2 ? 0.4 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 1000 v ce = ? 3v ta = 100 c 25 c ? 40 c fig.2 grounded emitter output characteristics ? 0.4 0 ? 0.8 ? 1.2 ? 1.6 ? 2 0 ? 0.1 ? 0.2 ? 0.3 ? 0.4 ? 0.5 i b = 0a ? 250 a ? 500 a ? 750 a ? 1ma ? 1.25ma ? 1.5ma ? 1.75ma ? 2ma ? 2.25ma ? 2.5ma collector current : i c (a) collector to emitter voltage : v ce (v) ta = 25 c fig.3 dc current gain vs. collector curren ( ) dc current gain : h fe ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 50 20 100 200 500 ta = 25 c collector current : i c (ma) v ce = ? 6v ? 3v ? 1v fig.4 dc current gain vs. collector current ( ) 50 20 100 200 500 dc current gain : h fe v ce = ? 3v collector current : i c (ma) ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 ta = 100 c 25 c ? 25 c fig.6 collector-emitter saturation voltage vs. collector current ( ) ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 ? 20 ? 50 ? 100 ? 200 ? 500 l c /l b = 10 collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) ta = 100 c 25 c ? 40 c
MP6T2 transistors rev.a 3/3 fig.7 base-emitter saturation voltage vs. collector current colletor current : i c (ma) base saturation voltage : v be(sat) (v) ? 5 ? 10 ? 20 ? 50 ? 100 ? 500 ? 1000 ? 2000 ? 200 ? 0.1 ? 0.05 ? 0.2 ? 0.5 ? 1 i c /i b = 10 ta = 25 c fig.10 normalized thermal resistance (element) 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 pulse width : pw( s) nor malized transient therm al resistance : r( t ) ta=25 fig.11 safe operating area (tr1 & tr2) fig.9 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) ta = 25 c f = 1mhz i e = 0a i c = 0a ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 30 10 20 50 200 300 100 cib cob fig.8 gain bandwidth product vs. emitter current ta = 25 c v ce = ? 5v emitter current : i e (ma) transition frequency : f t (mhz) 5 10 20 50 100 500 1000 2000 200 50 100 200 500 0.01 0.1 1 10 0.1110100 collector current : i c (a) 1ms 10ms 100ms ta=25 single pulse dc collector to emitter voltage : v ce (v) - - - - ----
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2008 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
|
