View IRLR8103V_5572901.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? n-channel application-specific mosfets ideal for cpu core dc-dc converters low conduction losses low switching losses minimizes parallel mosfets for high current applications 100% r g tested description this new device employs advanced hexfet power mosfet technology to achieve an unprecedented balance of on-resistance and gate charge. the reduced conduction and switching losses make it ideal for high efficiency dc-dc converters that power the latest generation of microprocessors. the IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including r ds(on) , gate charge and cdv/dt-induced turn-on immunity. the IRLR8103V offers an extremely low combination of q sw & r ds(on) for reduced losses in both control and synchronous fet applications. the package is designed for vapor phase, infra-red, convection, or wave soldering techniques. power dissipation of greater than 2w is possible in a typical pcb mount application. device characteristics 11/12/03 d-pak IRLR8103V www.irf.com 1 s d g pd-94021b IRLR8103V r ds ( on ) 7.9 m ? q g 27 nc q sw 12 nc q oss 29nc absolute maximum ratings symbol units v ds v gs continuous drain or source current tc = 25c (v gs > 10v) tc= 90c i dm tc = 25c tc = 90c t j , t stg c i s i sm thermal resistance symbol typ. max. units r ja ??? 50 r jc ??? 1.09 c/w a v a i d p d w IRLR8103V 91 363 30 20 63 91 363 115 -55 to 150 60 power dissipation parameter maximum junction-to-ambient maximum junction-to-case junction & storage temperature range continuous source current (body diode) pulsed source current parameter drain-source voltage gate-source voltage pulsed drain current
www.irf.com 2 IRLR8103V notes: repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board, t < 10 sec. typ = measured - q oss typical values of r ds (on) measured at v gs = 4.5v, q g , q sw and q oss measured at v gs = 5.0v, i f = 15a. electrical characteristics parameter symbol min typ max units drain-to-source breakdown voltage bv dss 30 ??? ??? v static drain-source r ds(on) ??? 6.9 9.0 on-resistance ??? 7.9 10.5 gate threshold voltage v gs(th) 1.0 ??? 3.0 v drain-to-source leakage current i dss ??? ??? 50 a ??? ??? 20 ??? ??? 100 gate-source leakage current i gss ??? ??? 100 na total gate charge, control fet q g ??? 27 ??? total gate charge, synch fet q g ??? 23 ??? pre-vth gate-source charge q gs1 ??? 4.7 ??? post-vth gate-source charge q gs2 ??? 2.0 ??? gate to drain charge q gd ??? 9.7 ??? switch charge (q gs2 + q gd )q sw ??? 12 ??? output charge q oss ??? 29 ??? gate resistance r g 0.8 ??? 3.1 ? turn-on delay time t d(on) ??? 10 ??? rise time t r ??? 9 ??? turn-off delay time t d(off) ??? 24 ??? fall time t f ??? 18 ??? input capacitance c iss ??? 2672 ??? output capacitance c oss ??? 1064 ??? reverse transfer capacitance c rss ??? 109 ??? source-drain rating & characteristics parameter symbol min typ max units diode forward voltage v sd ??? 0.9 1.3 v reverse recovery charge q rr ??? 103 ??? nc reverse recovery charge q rr(s) ??? 96 ??? nc (with parallel schottky) v gs = 5v, i d = 15a, v ds = 16v v ds = 24v, v gs = 0 v dd = 16v v ds = 24v, v gs = 0, t j = 100c conditions v gs = 0v, i d = 250a v gs = 10v, i d = 15a conditions di/dt = 700a/s , (with 10bq040) v ds = 16v, v gs = 0v, i f = 15a di/dt ~ 700a/s v ds = 16v, v gs = 0v, i f = 15a is = 15a , v gs = 0v v gs = 4.5v, i d = 15a nc m ? a v ds = 16v, v gs = 0 v ds = 16v, i d = 15a v gs = 5v, v ds < 100mv v ds = v gs , i d = 250a v ds = 30v, v gs = 0v v gs = 20v ns pf v gs = 16v, v gs =0 i d = 15a v gs = 5.0v clamped inductive load
www.irf.com 3 IRLR8103V fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 15a 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
www.irf.com 4 IRLR8103V

fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 0 1000 2000 3000 4000 5000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 5 10 15 20 25 30 0 1 2 3 4 5 6 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 15a v = 15v ds v = 24v ds 1 10 100 1000 10000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
www.irf.com 5 IRLR8103V
v ds 90% 10% v gs t d(on) t r t d(off) t f
! " #$

1 0.1 % + - 25 50 75 100 125 150 0 20 40 60 80 100 t , case temperature ( c) i , drain current (a) c d limited by package fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case
1 0.1 % 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 6 IRLR8103V fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge 0 50 100 150 200 250 300 350 i d , drain current ( a ) 0.006 0.008 0.010 0.012 0.014 0.016 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = 4.5v vgs = 10v 0.0 2.0 4.0 6.0 8.0 v gs, gate -to -source voltage (v) 0.006 0.008 0.010 0.012 0.014 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 15a
www.irf.com 7 IRLR8103V

6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) min. 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - drain 3 - source 4 - drain 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions shown are before solder dip, solder dip max. +0.16 (.006). example: lot code 9u1p t his is an irfr120 with assembly we e k = 16 dat e code year = 0 logo rectifier int ernational as s e mb l y lot code 016 irf u120 9u 1p notes : t his part marking information applies to devices produced before 02/26/2001 int ernational logo rectifier 34 12 irf u120 916a lot code as s e mb l y example: with assembly t his is an irfr120 ye ar 9 = 1999 dat e code line a we e k 1 6 in the assembly line "a" as sembled on ww 16, 1999 l ot code 1234 part number notes : t his part marking information applies to devices produced after 02/26/2001
www.irf.com 8 IRLR8103V ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/03

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

▲Up To Search▲

Price & Availability of IRLR8103V

	To Download IRLR8103V Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .