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Datasheet File OCR Text: |
inchange semiconductor product specification silicon npn power transistor MJE13003D description high voltage capability high speed switching wide area of safe operation applications fluorescent lamp electronic ballast electronic transformer switch mode power supply absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current-continuous 2 a p c collector power dissipation @t c =25 40 w t j junction temperature 150 t stg storage temperature -65~150
inchange semiconductor product specification silicon npn power transistor MJE13003D electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma ;i b = 0 b 400 v v (br)ebo emitter-base breakdown voltage i e = 1ma ;i c = 0 9 v v ce (sat) -1 collector-emitter saturation voltage i c = 1a; i b = 0.25a b 0.5 v v ce (sat) -2 collector-emitter saturation voltage i c = 1.5a; i b = 0.5a 0.6 v v be (sat) base-emitter saturation voltage i c = 0.5a; i b = 0.1a 1.2 v i cbo collector cutoff current v cb = 700v; i e = 0 100 a i ceo collector cutoff current v ce = 400v; i b = 0 250 a h fe-1 dc current gain i c = 1ma ; v ce = 5v 7 h fe-2 dc current gain i c = 0.5a ; v ce = 5v 10 40 h fe-3 dc current gain i c = 2a ; v ce = 5v 5 v ecf c-e diode forward voltage i f = 2a 2.0 v switching times t s storage time 3.5 s t f fall time i c = 0.25a; v cc = 5v 0.8 s |
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