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| description the AMS2300 is the nchannel logic ienhancement imode ipower ifield ieffect itransistor is produced using high cell density, dmos trench techn ology. this high density process is especially tailored to minimize onstate resistance.these devices are particularly suited for low voltage application such as cellular phone and notebook computer i power i management i and i other i batter i powered i c i rcu i ts, i and i low i nl i ne i power i loss are needed i n a very small outl i ne surface mount pa ckage. pin configuration sot-23-3l 1.gate 2.source 3.drain part marking sot-23-3l y: year code a: process code ordering information part number package part marking AMS2300 g sot233l g 42ya process code : a ~ z ; a ~ z feature 20 v/6.0a, r ds(on) = 22m (typ.) @v gs = 10v 20v/5.0a, r ds(on) = 36m @v gs = 4.5v 20v/4.5a, r ds(on) = 45m @v gs = 2.5v 20v/4.0a, r ds(on) = 60m @v gs = 1.8v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sot233l package design 3 1 2 d g s 3 1 2 42ya
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Price & Availability of AMS2300
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