2002. 10. 23 1/3 semiconductor technical data KTA1862D/l epitaxial planar pnp transistor revision no : 3 high voltage switching. power supply switching for telephones. features high breakdown voltage, typically : bv ceo =-400v. low collector saturation voltage. : v ce(sat) =-0.5v(max.) at (i c =0.5a) high switching speed, typically : t f = 0.4 s at i c =-1a wide safe operating area (soa) maximum rating (ta=25 ) dpak dim millimeters a b c d f h i j k l 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 2.70 0.2 2.30 0.1 1.00 max 2.30 0.2 0.5 0.1 2.00 0.20 0.50 0.10 e 0.91 0.10 m 0.90 0.1 o a c d b e k i j q h f f m o p l 123 1. base 2. collector 3. emitter 1.00 0.10 p 0.95 max q + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) note : h fe (1) classification o:56~120, y:82~180. characteristic symbol rating unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltag v ebo -7 v collector current dc i c -2.0 a pulse i cp -4.0 collector power dissipation ta=25 p c 1.3 w tc=25 10 junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut of current i cbo v cb =-400v - - -1.0 a emitter cut of current i ebo v eb =-5v - - -1.0 a collector-base breakdown voltage bv cbo i c =-50 a -400 - - v collector-emitter breakdown voltage bv ceo i c =-1ma -400 - - v emitter-base breakdown voltage bv ebo i e =-50 a -7 - - v dc current gain h fe (1) note v ce =-5v, i c =-100ma 56 100 180 h fe (2) v ce =-5v, i c =-500ma 6 - - collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-100ma - -0.3 -0.5 v base-emitter saturation voltage v be(sat) i c =-500ma, i b =-100ma - - -1.2 v transition frequency f t v ce =-10v, i e =-100ma, f=5mhz - 18 - mhz collector output capacitance c ob v cb =-10v, i e =0ma, f=1mhz - 30 - pf switching time turn-on time t on i b1 150 ? b1 i cc v =-150v i b2 i b2 20 sec -i =i =0.2a 1% b1 b2 output duty cycle input 0 < = - 0.2 - s turn-off time t stg - -1.8 - storage time t f - 0.4 - dim millimeters ipak d b q e h f f c a p l i j 123 a b c d e f g h i j l p q 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 9.50 0.6 2.30 0.1 0.76 0.1 1.0 max 2.30 0.2 0.5 0.1 0.50 0.1 1.0 0.1 0.90 max g 1. base 2. collector 3. emitter k 2.0 0.2 k + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _
2002. 10. 23 2/3 KTA1862D/l revision no : 3 collector current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v collector dissipation p (w) c 0 0 ambient temperature ta ( c) p - ta -2 -4 -6 -8 -10 ta=25 c i =-0.5ma b c tc=ta infinite heat sink -0.1 -0.2 -0.3 -0.4 -0.5 -1.0ma -1.5ma -2.0ma -2.5ma -3.0ma -3.5ma -4.0ma -4.5ma -5.0ma dc current gain h fe -0.001 collector current i (a) c h - i fe c -0.01 -0.1 -1 -3 1 3 ta=25 c v =-5v ce 10 30 100 300 1k -0.001 collector current i (a) c 0 base-emitter voltage v (v) be i - v cbe -0.003 -0.01 -0.03 -0.1 -0.3 -1 -5 ta=25 c v =-5v ce -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 th 10 transient thermal resistance 100 1 r ( c/w) th r - t w 1 0.1 0.01 10 0.001 pulse width t (sec) w 0.1 100 1k curves should be applied in thermal limited area. (sigle nonrepetitive pulse) 1 infinite heat sink 2 no heat sink 2 1 25 50 75 100 125 150 2 4 6 8 10 12 no heat sink 2 1 1 2 safe operating area ce collector-emitter voltage v (v) -1 -3 -10 -1 k -0.01 c collector current i (a) i max(pulse) * 10ms* 100ms* dc o peration -30 -100 -300 -0.03 -0.1 -0.3 -1 -3 -10 single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature * c tc=25 c
2002. 10. 23 3/3 KTA1862D/l revision no : 3 v ,v (v) ce(sat) -0.001 collector current i (a) c v , v - i ce(sat) -0.01 -0.1 -1 -3 -0.01 ta=25 c i /i =5 c -0.03 -0.1 -0.3 -1 -3 -10 be(sat) saturation voltage be(sat) v ce(sat) v b be(sat) c f - i e emitter current i (a) 0.001 0.03 0.01 0.03 100 t 1 transition frequency f (mhz) 10 te 0.1 0.3 1 3 5 30 50 v =-10v ta=25 c ce c - v , c - v cb collector to base voltage v (v) -0.1 -0.3 -1 -3 1k 10 collector output capacitance c (pf) 100 ob cb emitter input capacitance c (pf) -10 -30 -100 30 50 300 500 i =0a f=1mhz ta=25 c e emitter to base voltage v (v) eb ob ib ib eb fall time t ( s) 0.1 f -1 -3 -0.3 -0.1 collector current i (a) c switching time -10 0.3 0.5 1 3 5 10 i =5i =-5i c -0.5 -5 ta=25 c b1 b2 t stg f t on t storage time t ( s) stg turn on time t ( s) on c ib c ob
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