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| savantic semiconductor product specification silicon npn power transistors BUW13 BUW13a description with to-3pn package high voltage,high speed applications converters inverters switching regulators motor control systems pinning (see fig.2) pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit BUW13 850 v cbo collector-base voltage BUW13a open emitter 1000 v BUW13 400 v ceo collector-emitter voltage BUW13a open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current 15 a i cm collector current-peak 30 a i b base current 6 a i bm base current-peak 9 a p t total power dissipation t c =25 175 w t j junction temperature 150 t stg storage temperature -65~175 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUW13 BUW13a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit BUW13 400 v ceo(sus) collector-emitter sustaining voltage BUW13a i c =0.1a ; i b =0; l=25mh 450 v BUW13 i c =10a; i b =2a v cesat collector-emitter saturation voltage BUW13a i c =8a; i b =1.6a 1.5 v BUW13 i c =10a; i b =2a v besat base-emitter saturation voltage BUW13a i c =8a; i b =1.6a 1.6 v i ces collector cut-off current v ce =rated v ces ; v be =0 tc=125 1.0 4.0 ma i ebo emitter cut-off current v eb =9v; i c =0 10 ma h fe-1 dc current gain i c =20ma ; v ce =5v 10 35 h fe-2 dc current gain i c =1.5a ; v ce =5v 10 35 switching times resistive load t on turn-on time 1.0 s t s storage time 4.0 s t f fall time for BUW13 i c =10a ;i b1 =-i b2 =2a for BUW13a i c =8a ;i b1 =-i b2 =1.6a 0.8 s savantic semiconductor product specification 3 silicon npn power transistors BUW13 BUW13a package outline fig.2 outline dimensions(unindicated tolerance: 0.10mm) |
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