silicon small signal n-channel jfet semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 7281 issue 2 page 1 of 2 2N4393 high speed switching. low on resistance. designed for high reliability and space applications. absolute maximum ratings (t a = 25c unless otherwise stated) v ds drain ? source voltage 40v v gs gate ? source voltage -40v v gd gate ? drain voltage -40v i g gate current 50ma p d total power dissipation at t a = 25c 300mw derate above 25c 2mw/c t j junction temperature range -55 to +175c t stg storage temperature range -65 to +200c electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. units v (br)gss gate ? source breakdown voltage v ds = 0v i g = 1.0a -40 v gs(off) gate ? source cut-off voltage v ds = 20v i d = 1.0na -0.5 -3 v i dss (1) saturation drain current v ds = 20v v gs = 0v 5 30 ma v ds = 0v v gs = -20v -100 pa i gss gate reverse current t a = 150c -200 na v ds = 20v v gs = -5v 100 pa i d(off) drain cut-off current t a = 150c 200 na v ds(on) drain ? source on voltage v gs = 0v i d = 3ma 0.4 v r ds(on) drain ? source on resistance v gs = 0 i d = 1.0ma 100
silicon small signal n-channel jfet 2N4393 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 7281 issue 2 page 2 of 2 dynamic characteristics symbols parameters test conditions min. typ. max. units c iss common ? source input capacitance v ds = 20v f = 1.0mhz v gs = 0v 26 c rss common ? source reverse transfer capacitance v ds = 0v f = 1.0mhz v gs = -5v 5 pf r ds(on) drain ? source on resistance v gs = 0 f = 1.0khz i d = 0a 100 t r rise time 5 t d(on) turn-on delay time 15 t f fall time 30 t d(off) turn-off delay time v dd = 10v v gs = 0v v gsx = -5v i d(on) = 3ma 50 ns (1) pulse width 380us, 2% mechanical data dimensions in mm (inches) 1 3 2 2.54 (0.100) nom. 0.48 (0.019) 0.41 (0.016) dia. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min. to-18 (to-206aa) metal package underside view pin 1 ? source pin 2 ? drain pin 3 - gate
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