parameter max. units v ds drain- source voltage 30 v i d @ t a = 25c continuous drain current, v gs @ 10v 12.5 i d @ t a = 70c continuous drain current, v gs @ 10v 10 a i dm pulsed drain current ? 50 p d @t a = 25c power dissipation ? 2.5 p d @t a = 70c power dissipation ? 1.6 linear derating factor 0.02 w/c e as single pulse avalanche energy ? 400 mj v gs gate-to-source voltage 20 v t j, t stg junction and storage temperature range -55 to + 150 c l n-channel mosfet l low on-resistance l low gate charge l surface mount l logic level drive 1/3/2000 si4420dy hexfet ? power mosfet parameter max. units r q ja maximum junction-to-ambient ? 50 c/w thermal resistance this n-channel hexfet ? power mosfet is produced using international rectifier's advanced hexfet power mosfet technology. the low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications the so-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mw in typical board mount applications. v dss = 30v r ds(on) = 0.009 w description top view 8 1 2 3 4 5 6 7 d d d d g s a s s a absolute maximum ratings w www.irf.com 1 pd - 93835 so-8
si4420dy 2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (diode conduction) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.1 v t j = 25c, i s = 2.3a, v gs = 0v ? t rr reverse recovery time CCC 52 78 ns t j = 25c, i f = 2.3a ? repetitive rating; pulse width limited by max. junction temperature. notes: ? pulse width 300s; duty cycle 2%. source-drain ratings and characteristics CCC CCC CCC CCC 50 2.3 a s d g ? when mounted on fr4 board, t 10 sec parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.028 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.009 v gs = 10v, i d = 12.5a ? CCC CCC 0.013 v gs = 4.5v, i d = 10.5a ? v gs(th) gate threshold voltage 1.0 CCC CCC v v ds = v gs , i d = 250a g fs forward transconductance CCC 29 CCC s v ds = 15v, i d = 12.5a CCC CCC 1.0 v ds = 30v, v gs = 0v CCC CCC 5.0 v ds = 30v, v gs = 0v, t j = 55c gate-to-source forward leakage CCC CCC -100 v gs = -20v gate-to-source reverse leakage CCC CCC 100 v gs = 20v q g total gate charge CCC 52 78 i d = 12.5a q gs gate-to-source charge CCC 8.7 CCC nc v ds = 15v q gd gate-to-drain ("miller") charge CCC 12 CCC v gs = 10v, see fig. 6 ? t d(on) turn-on delay time CCC 15 CCC v dd = 15v t r rise time CCC 10 CCC i d = 1.0a t d(off) turn-off delay time CCC 55 CCC r g = 6.0 w t f fall time CCC 47 CCC r d = 15 w , ? c iss input capacitance CCC 2240 CCC v gs = 0v c oss output capacitance CCC 1100 CCC pf v ds = 15v c rss reverse transfer capacitance CCC 150 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) i gss a w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns ? starting t j = 25c, l = 13mh r g = 25 w , i as = 8.9a. (see figure 15)
si4420dy www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 4.0 5.0 6.0 7.0 8.0 9.0 v gs , gate-to-source voltage (v) 10 100 1000 i d , drain-to-source current (a ) t j = 25c t j = 150c v ds = 25v 20s pulse width t j = -55c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 12.5a 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v
si4420dy 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 12.5a v = 15v ds v = 24v ds 1 10 100 0 1000 2000 3000 4000 v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 5.0 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
si4420dy www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 2 4 6 8 10 12 14 t , case temperature ( c) i , drain current (a) c d fig 10. typical power vs. time 0 20 40 60 80 100 0.01 0.1 1 10 100 a power ( w ) time (sec) 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
si4420dy 6 www.irf.com fig 12. typical on-resistance vs. drain current fig 13. typical on-resistance vs. gate voltage 0.00 0.04 0.08 0.12 0.16 0.20 0 102030 4050 a i , drain current ( a ) d r , drain-to-source on resistance ds(on) (w) v = 10v gs v = 4.5v gs fig 14. typical threshold voltage vs.temperature fig 15. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.0a 7.1a 8.9a 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs, gate -to -source voltage (v) 0.006 0.008 0.010 0.012 r ds(on) , drain-to -source on resistance ( w ) i d = 12.5a -60 -20 20 60 100 140 180 t j , temperature (c) 1.0 1.5 2.0 2.5 3.0 v gs(th) , variace (v) i d = 250a
si4420dy www.irf.com 7 so-8 package outline so-8 part marking information
si4420dy 8 www.irf.com dimensions are shown in millimeters (inches) so-8 tape & reel information 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 data and specifications subject to change without notice. 1/2000
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