4v drive pch mosfet RSD080P05 ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) fast switching speed. 3) drive circuits can be simple. 4) parallel use is easy. ? application switching ? packaging specifications ? inner circuit package taping code tl basic ordering unit (pieces) 2500 RSD080P05 ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 45 v gate-source voltage v gss ? 20 v continuous i d ? 8.0 a pulsed i dp ? 16 a continuous i s ? 8.0 a pulsed i sp ? 16 a power dissipation p d 15 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw Q10 ? s, duty cycle Q1% *2 t c =25 ? c ? thermal resistance symbol limits unit channel to case r th (ch-c) 8.33 ? c / w * t c =25 ? c parameter type source current (body diode) drain current parameter *2 *1 *1 * cpt3 (sc-63) y ? ? ? e ? e ? y ? ? ? e ? t ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?05 ? ? ? (1) gate (2) drain (3) source ? 1 esd protection diode ? 2 body diode ?2 ?1 (1) (2) (3) 1/6 2011.08 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RSD080P05 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 45 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 45v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 3.0 v v ds = ? 10v, i d = ? 1ma -6591 i d = ? 8.0a, v gs = ? 10v - 95 133 i d = ? 8.0a, v gs = ? 4.5v - 105 147 i d = ? 8.0a, v gs = ? 4.0v forward transfer admittance l y fs l 6.0 - - s i d = ? 8.0a, v ds = ? 10v input capacitance c iss - 1000 - pf v ds = ? 10v output capacitance c oss - 160 - pf v gs =0v reverse transfer capacitance c rss - 80 - pf f=1mhz turn-on delay time t d(on) - 12 - ns i d = ? 4.0a, v dd ? 25v rise time t r - 15 - ns v gs = ? 10v turn-off delay time t d(off) - 50 - ns r l =6.25 ? fall time t f - 20 - ns r g =10 ? total gate charge q g - 9.0 - nc v dd ? 25v gate-source charge q gs - 4.0 - nc i d = ? 8.0a, gate-drain charge q gd - 3.0 - nc v gs = ? 5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 8.0a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * * * * * * * 2/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSD080P05 ? electrical characteristic curves (ta=25 ? c) 0 1 2 3 4 5 6 7 8 0 0.2 0.4 0.6 0.8 1 drain current : - i d [a] drain - source voltage : - v ds [v] fig.1 typical output characteristics ( ) v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v v gs = - 2.8v v gs = - 3.6v v gs = - 3.2v t a =25 c pulsed 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 drain current : - i d [a] drain - source voltage : - v ds [v] fig.2 typical output characteristics ( ) v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v v gs = - 2.8v v gs = - 3.2v v gs = - 3.6v t a =25 c pulsed 10 100 1000 0.001 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs = - 4.0v v gs = - 4.5v v gs = - 10v t a =25 c pulsed 1 10 100 1000 0.001 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs = - 10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 1000 0.001 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs = - 4.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 1000 0.001 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs = - 4v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 3/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSD080P05 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : - i d [a] fig.7 forward transfer admittance vs. drain current v ds = - 10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.00001 0.0001 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 drain currnt : - i d [a] gate - source voltage : - v gs [v] fig.8 typical transfer characteristics v ds = - 10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 source current : - is [a] source - drain voltage : - v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 50 100 150 200 250 300 350 400 0 2 4 6 8 10 12 14 16 18 20 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : - v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d = - 8.0a i d = - 4.0a t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 switching time : t [ns] drain current : - i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P - 25v v gs = - 10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 5 10 15 20 25 gate - source voltage : - v gs [v] total gate charge : - q g [nc] fig.12 dynamic input characteristics t a =25 c v dd = - 25v i d = - 8a pulsed 4/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSD080P05 1 10 100 1000 10000 100000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : - v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 drain current : - i d [ a ] drain - source voltage : - v ds [ v ] fig.14 maximum safe operating area t c =25 c single pulse operation in this area is limited by r ds(on) (v gs = - 10v ) p w = 100 s p w = 1ms p w = 10ms dc operation 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t c =25 c single pulse r th(ch - c) =8.33 c /w r th(ch - c)(t) =r (t) r th(ch - c) 5/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSD080P05 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 6/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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