NTE491T mosfet n - ch, enhancement mode high speed switch features: zener diode input protected low on - resistance ultralow threshold low input characteristics low input and output leakage applications: drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc, battery operated systems solid - state relays inductive load drivers absolute maximum ratings: (t a = +25 c unless otherwise specified) drain - source voltage, v ds 60v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate - source voltage, v gs 15/ - 0.3v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . drain current, i d continuous (t j = +150 c) t a = +25 c 310ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t a = +100 c 200ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pulsed 1a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation, p d t a = +25 c 1w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t a = +100 c 400mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature range, t j -55 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg -55 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . thermal resistance, junction - to - ambient, r th (ja) 125 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
electrical characteristics: (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit static characteristics drain- source breakdown voltage v (br)dss v gs = 0, i d = 100 a 60 - - v gate threshold voltage v gs(th) i d = 1ma, v ds = v gs 0.8 - 2.5 v gate - body leakage current i gss v gs = 15v, v ds = 0 - - 100 na zero - gate - voltage drain current i dss v ds = 48v, v gs = 0 - - 10 a v ds = 48v, v gs = 0, t j = +125 c - - 500 ma on - state drain current i d(on) v gs = 10v, v ds = 10v, note 1 750 - - ma drain - source on resistance r ds(on) v gs = 10v, i d = 500ma - - 5.0 ? v gs = 10v, i d = 500ma, t j = +125 c - - 6.0 ? v gs = 5v, i d = 200ma 7.5 ? forward transconductance g fs v ds = 10v, i d = 500ma 100 - - ms dynamic characteristics input capacitance c iss v ds = 25v, v gs = 0v, f = 1mh z - - 60 pf output capacitance c oss - - 25 pf reverse transfer capacitance c rss - - 5 pf switching characteristics (note 2) turn - on time t on v dd = 15v, r l = 23 ? , i d = 600ma, ? ? - - 10 ns note 1. pulse test: pulse width 300 s, duty cycle 2%. note 2. switching time is essentially independent of operating temperature. .100 (2.54) .200 (5.08) .180 (4.57) .018 (0.46) .015 (0.38) .050 (1.27) .050 (1.27) .050 (1.27) .090 (2.28) r .180 (4.57) .594 (15.09) .140 (3.55) s g d
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