? semiconductor components industries, llc, 2011 december, 2011 ? rev. 0 1 publication order number: nmlu1210/d nmlu1210 full bridge rectifier dual 20 v n ? channel with dual 3.2 a schottky barrier diode, 4.0 x 4.0 x 0.5 mm cool ? package features ? full ? bridge rectifier block ? up to 3.2 a operation ? low r ds(on ) mosfet to minimize conduction loss ? low gate charge mosfet ? low vf schottky diode ? ultra low inductance package ? this device uses halogen ? free molding compound ? these are pb ? free devices applications ? wireless charging ? ac ? dc rectification ? optimized for power management applications for portable products, such as cell phones, pmp, dsc, gps, and others rectifier maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit input voltage between two mosfet drain v ll 20 v bridge operating junction and storage temperature t j , t stg ? 55 to 125 c lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c continuous drain current r _ ja (note 1) t a = 25 c i o 2.2 a t a = 85 c 1.16 power dissipation r _ ja (note 1) t a = 25 c p d 1.2 w t a = 85 c 0.47 continuous drain current r _ ja t < 5 s (note 1) t a = 25 c i o 3.2 a t a = 85 c 1.88 power dissipation r _ ja t < 5 s (note 1) t a = 25 c p d 2.34 w t a = 85 c 0.94 continuous drain current r _ ja (note 2) t a = 25 c i o 1.16 a t a = 85 c 0.6 power dissipation r _ ja (note 2) t a = 25 c p d 0.47 w t a = 85 c 0.185 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 2. surface ? mounted on fr4 board using the minimum recommended pad size of 30 mm 2 , 2 oz. cu. device package shipping ? ordering information udfn case 517bs http://onsemi.com 20 v 20 v 17 m @ 10 v 23 m @ 4.5 v 0.45 v r ds(on) typ 3.2 a 3.2 a i d max v (br)dss mosfet schottky diode v r max i f max v f typ rectifier marking diagram pin connections NMLU1210TWG udfn (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. ? ? ? ? ? cool pin connections (top view) 1210 ayww 1210 = specific device code a = assembly location y = year ww = work week = pb ? free package (*note: microdot may be in either location)
nmlu1210 http://onsemi.com 2 thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 3) r ja 82.5 c/w junction ? to ? ambient ? t 5 s (note 3) r ja 42.5 junction ? to ? ambient ? steady state min pad (note 4) r ja 209 3. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 4. surface ? mounted on fr4 board using the minimum recommended pad size of 30 mm 2 , 2 oz. cu. bridge electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit on characteristics rectifying forward voltage (note 5) v fd2 input voltage v ll = 5 v; the output current of rectifier i out = 2 a 0.45 .56 v rectifier leakage current i leak input voltage v ll = 16 v; no load on the rectifier output 31 1000 ua rectifier reverse leakage current i rleak input voltage v ll = 0 v; the output voltage of the rectifier v out = 5 v 21 1000 ua 5. pulse test: pulse width 300 s, duty cycle 2% mosfet electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit on characteristics gate threshold voltage v gs(th) v gs = vds, i d = 250 a 1.2 2.2 v negative threshold temperature coefficient v gs(th) / t j 4 mv/ c drain ? to ? source on resistance (note 6) r ds(on) v gs = 10 v, i d = 3.2 a 17 26 m v gs = 4.5 v, i d = 3.2 a 23 32 forward transconductance g fs vds = 10 v, i d = 2.0 a 3.5 s drain ? source diode characteristics forward diode voltage (note 6) v sd v gs = 0 v, i s = 2.0 a t j = 25 c 0.79 v t j = 125 c 0.65 6. pulse test: pulse width 300 s, duty cycle 2% schottky diode electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit maximum instantaneous forward voltage (note 7) v f i f = 1.0 a 0.36 v i f = 2.0 a 0.41 maximum instantaneous reverse current i r v r = 20 v 0.04 ma 7. pulse test: pulse width 300 s, duty cycle 2% schottky diode electrical characteristics (t j = 100 c unless otherwise specified) parameter symbol test condition min typ max unit maximum instantaneous forward voltage (note 8) v f i f = 1.0 a 0.29 v i f = 2.0 a 0.36 maximum instantaneous reverse current i r v r = 20 v 4 ma 8. pulse test: pulse width 300 s, duty cycle 2% 9. for detailed mosfet and diode parameters, please refer to the on semiconductor datasheets of nttfs4930n and mbr230lsft1g. the test on each individual die is limited to the system package.
nmlu1210 http://onsemi.com 3 figure 1. typical application circuit gnd1 and gnd2 are not internally connected. the user should make the connection in the pcb design.
nmlu1210 http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise specified) 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 figure 2. bridge typical forward voltage drop at v in 5 v v f , instantaneous forward voltage (v) i f , instantaneous forward current (a) 25 c 125 c ? 55 c 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 figure 3. bridge maximum forward voltage drop at v in 5 v v f , instantaneous forward voltage (v) i f , instantaneous forward current (a) 25 c 125 c ? 55 c 10k 25 35 45 55 65 75 85 figure 4. output leakage at 5 v bias vs. junction temperature t j , temperature junction ( c) output leakage (ma) 95 105 115 125 maximum typical 1k 100 10 1 0.1 0.01 25 35 45 55 65 75 85 figure 5. input leakage at 16 v vs. junction temperature t j , temperature junction ( c) i leak , output leakage (ma) 95 105 115 125 maximum typical figure 6. fet typical on ? resistance vs. gate ? to ? source voltage ( from 3 v to 10 v) i d = 2 a t j = 25 c 700 600 500 400 300 200 100 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 v gs (v) r ds(on) (m ) 1k 100 10 1 0.1 0.01 40 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 35 30 25 20 15 figure 7. fet typical on ? resistance vs. gate ? to ? source voltage v gs , gate ? to ? source voltage (v) r ds(on) (m ) i d = 2 a t j = 25 c
nmlu1210 http://onsemi.com 5 typical performance curves (t j = 25 c unless otherwise specified) 10 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 figure 8. schottky typical forward current vs. forward voltage v f , instantaneous forward voltage (v) i f , instantaneous forward current (a) 25 c 125 c ? 55 c 0 5 10 15 20 25 figure 9. schottky typical reverse current vs. reverse voltage v r , instantaneous reverse voltage (v) i r , instantaneous reverse current (ma) 125 c 25 c 100 10 1.0 0.1 0.01 0.001
nmlu1210 http://onsemi.com 6 package dimensions case 517bs issue a notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.25mm from terminal tip. 4. coplanarity applies to the exposed pad as well as the terminals. 5. positional tolerance applies to all of the exposed pads. dim min max millimeters a 0.45 0.55 a1 0.00 0.05 a3 0.13 ref b 0.20 0.30 d 4.00 bsc d2 2.10 2.30 e 4.00 bsc e2 2.50 2.70 f 3.55 bsc l 0.30 0.50 l1 0.00 0.15 d b e c 0.15 a c 0.15 top view side view bottom view ? ? ?? ?? ? ? ? ? c 0.08 c 0.10 e e2 d2 b note 3 1 4 5 8 8x 0.10 c 0.05 c ab pin one reference *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 6x 0.60 2.34 2.74 4x 3.69 4.15 0.35 l detail a l3 alternate constructions ?? ?? ?? 0.13 0.23 detail b note 4 detail a dimensions: millimeters package outline d3 0.90 1.10 e3 1.00 1.20 e 0.80 bsc l3 l1 recommended 1.14 1.24 2x detail c 1 1.15 2x 0.80 0.80 0.40 detail c a m 0.10 b c m m 2x e3 d3 a m 0.10 b c f/2 e/2 f note 5 note 5 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nmlu1210/d cool is a trademark of semiconductor components industries, llc (scillc). literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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