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www.irf.com 1 09/05/06 irgb4065pbf IRGS4065PBF description this igbt is specifically designed for applications in plasma display panels. this device utilizes advanced trench igbt technology to achieve low v ce(on) and low e pulse tm rating per silicon area which improve panel efficiency. additional features are 150c operating junction temperature and high repetitive peak current capability. these features combine to make this igbt a highly efficient, robust and reliable device for pdp applications. features advanced trench igbt technology optimized for sustain and energy recovery circuits in pdp applications low v ce(on) and energy per pulse (e pulse tm ) for improved panel efficiency high repetitive peak current capability lead free package
v ce min 300 v v ce(on) typ. @ i c = 70a 1.75 v i rp max @ t c = 25c 205 a t j max 150 c key parameters e c g n-channel gc e gate collector emitter absolute maximum ratings parameter units v ge gate-to-emitter voltage v i c @ t c = 25c continuous collector current, v ge @ 15v a i c @ t c = 100c continuous collector, v ge @ 15v i rp @ t c = 25c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature for 10 seconds mounting torque, 6-32 or m3 screw n thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.70 r cs case-to-sink, flat greased surface , to-220 0.50 ??? c/w r ja junction-to-ambient, to-220 ??? 62 r ja junction-to-ambient ( pcb mount ) , d 2 pak ??? 40 max. 40 70 30 205 300 -40 to + 150 10lb in (1.1n m) 178 71 1.4 d 2 pak irgs4065dpbf e c g c to-220 irgb4065dpbf c e c g

2 www.irf.com half sine wave with duty cycle = 0.25, ton=1sec. r is measured at
pulse width 400s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv ces collector-to-emitter breakdown voltage 300 ??? ??? v ? v ces / ? t j breakdown voltage temp. coefficient ??? 0.23 ??? v/c ??? 1.20 1.40 ??? 1.35 ??? ??? 1.75 2.10 v ??? 2.35 ??? ??? 2.00 ??? v ge(th) gate threshold voltage 2.6 ??? 5.0 v ? v ge(th) / ? t j gate threshold voltage coefficient ??? -11 ??? mv/c i ces collector-to-emitter leakage current ??? 2.0 25 a ??? 50 ??? i ges gate-to-emitter forward leakage ??? ??? 100 na gate-to-emitter reverse leakage ??? ??? -100 g fe forward transconductance ??? 26 ??? s q g total gate charge ??? 62 ??? nc q gc gate-to-collector charge ??? 20 ??? t d(on) turn-on delay time ? 30 ? i c = 25a, v cc = 180v t r rise time ? 26 ? ns r g = 10 ? , l=200h, l s = 150nh t d(off) turn-off delay time ? 170 ? t j = 25c t f fall time ? 160 ? t d(on) turn-on delay time ? 30 ? i c = 25a, v cc = 180v t r rise time ? 28 ? ns r g = 10 ? , l=200h, l s = 150nh t d(off) turn-off delay time ? 250 ? t j = 150c t f fall time ? 310 ? t st shoot through blocking time 100 ??? ??? ns e pulse energy per pulse j c iss input capacitance ??? 2200 ??? c oss output capacitance ??? 110 ??? pf c rss reverse transfer capacitance ??? 55 ??? l c internal collector inductance ??? 5.0 ??? between lead, nh 6mm (0.25in.) l e internal emitter inductance ??? 13 ??? from package v ce = 30v see fig. 14 v ge = 0v l = 220nh, c= 0.40f, v ge = 15v conditions v ge = 0v, i ce = 1.0 ma reference to 25c, i ce = 1.0 ma v ge = 15v, i ce = 120a v ge = 15v, i ce = 25a v ge = 15v, i ce = 70a v ge = 15v, i ce = 40a and center of die contact v ge = 30v v ge = -30v ? = 1.0mhz, see fig.13 ??? 975 ??? v ce = 25v, i ce = 25a v ce = 200v, i c = 25a, v ge = 15v v cc = 240v, v ge = 15v, r g = 5.1 ? v cc = 240v, r g = 5.1 ?, t j = 25c l = 220nh, c= 0.40f, v ge = 15v v cc = 240v, r g = 5.1 ?, t j = 100c static collector-to-emitter voltage v ce(on) v ge = 15v, i ce = 70a, t j = 150c ??? 875 ??? v ce = v ge , i ce = 500a v ce = 300v, v ge = 0v v ce = 300v, v ge = 0v, t j = 150c

www.irf.com 3 fig 1. typical output characteristics @ 25c fig 3. typical output characteristics @ 125c fig 4. typical output characteristics @ 150c fig 2. typical output characteristics @ 75c fig 5. typical transfer characteristics fig 6. v ce(on) vs. gate voltage 0246810121416 v ce (v) 0 40 80 120 160 200 240 280 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v bottom v ge = 6.0v 0 2 4 6 8 10 12 14 16 v ce (v) 0 40 80 120 160 200 240 280 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v bottom v ge = 6.0v 0246810121416 v ce (v) 0 40 80 120 160 200 240 280 320 360 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v bottom v ge = 6.0v 0246810121416 v ce (v) 0 40 80 120 160 200 240 280 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v bottom v ge = 6.0v 0 5 10 15 20 v ge (v) 0 5 10 15 20 v c e ( v ) t j = 25c t j = 150c i c = 25a 0 5 10 15 20 v ge , gate-to-emitter voltage (v) 0 100 200 300 400 500 600 i c e , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 125c

4 www.irf.com fig 7. maximum collector current vs. case temperature fig 8. typical repetitive peak current vs. case temperature fig 10. typical e pulse vs. collector-to-emitter voltage fig 9. typical e pulse vs. collector current fig 11. e pulse vs. temperature fig 12. forrward bias safe operating area 25 50 75 100 125 150 t j , temperature (oc) 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh t = 1s half sine c= 0.4f c= 0.3f c= 0.2f 150 160 170 180 190 200 210 220 230 240 v ce, collector-to-emitter voltage (v) 200 300 400 500 600 700 800 900 1000 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4f 100c 25c 160 170 180 190 200 210 220 230 i c , peak collector current (a) 400 500 600 700 800 900 1000 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh c = variable 100c 25c 1 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) operation in this area limited by v ce (on) 1msec 10sec 100sec 0 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 i c , c o l l e c t o r c u r r e n t ( a ) 25 50 75 100 125 150 case temperature (c) 0 20 40 60 80 100 120 140 160 180 200 220 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 1s duty cycle = 0.25 half sine wave

www.irf.com 5 fig 13. typical capacitance vs. collector-to-emitter voltage fig 14. typical gate charge vs. gate-to-emitter voltage fig 15. maximum effective transient thermal impedance, junction-to-case 0 50 100 150 200 250 300 v ce , collector-toemitter-voltage(v) 10 100 1000 10000 100000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc 0 1020304050607080 q g , total gate charge (nc) 0 5 10 15 20 25 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) i c = 25a v ce = 240v v ce = 200v v ce = 150v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.0239 0.000011 0.1179 0.000047 0.3264 0.000922 0.2324 0.004889

6 www.irf.com fig 16a. t st and e pulse test circuit fig 16b. t st test waveforms fig 16c. e pulse test waveforms 1k vcc dut 0 l fig. 17 - gate charge circuit (turn-off) dri ver dut l c vcc rg rg b a ipulse energy v ce i c current pulse a pulse b t st

www.irf.com 7 to-220ab package is not recommended for surface mount application.

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www.irf.com 9 data and specifications subject to change without notice. this product has been designed for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/06

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dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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