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1 ? fn7176 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil (and design) is a registered trademark of intersil americas inc. copyright ? intersil americas inc. 2003. all rights reserved. elantec is a registered trademark of elantec semiconductor, inc. all other trademarks mentioned are the property of their respective owners. EL5123, el5223, el5323, el5423 12mhz 4, 8, 10 & 12 channel rail-to-rail input-output buffers the EL5123, el5223, el5323, and el5423 are low power, high voltage rail-to-rail input/output buffers designed primarily for use in reference voltage buffering applications for tft_lcds. they are available in quad (EL5123), octal (el5223), 10-channel (el5323), and 12- channel (el5423) topologies. all buffers feature a -3db bandwidth of 12mhz and operate from just 600a per buffer. this family also features fast slewing and settling times, as well as a continuous output drive capability of 30ma (sink and source). the quad channel EL5123 is available in the 10-pin msop package. the 8-channel el5223 is available in both the 20- pin tssop and 24-pin lpp packages, the 10-channel el5323 in the 24-pin tssop and 24-pin lpp packages, and the 12-channel el5423 in the 28-pin tssop and 32-pin lpp packages. all buffers are specified for operation over the full -40c to +85c temperature range. features ? 12mhz -3db bandwidth ? supply voltage = 4.5v to 16.5v ? low supply current (per buffer) = 600 a ? high slew rate = 15v/ s ? rail-to-rail input/output swing ? ultra-small packages applications ? tft-lcd drive circuits ? electronics notebooks ? electronic games ? touch-screen displays ? personal communication devices ? personal digital assistants (pda) ? portable instrumentation ? sampling adc amplifiers ? wireless lans ? office automation ? active filters ? adc/dac buffers ordering information part no package tape & reel pkg. no. EL5123cy 10-pin msop - mdp0043 EL5123cy-t7 10-pin msop 7? mdp0043 EL5123cy-t13 10-pin msop 13? mdp0043 el5223cl 24-pin lpp - mdp0046 el5223cl-t7 24-pin lpp 7? mdp0046 el5223cl-t13 24-pin lpp 13? mdp0046 el5223cr 20-pin tssop - mdp0044 el5223cr-t7 20-pin tssop 7? mdp0044 el5223cr-t13 20-pin tssop 13? mdp0044 el5323cl 24-pin lpp - mdp0046 el5323cl-t7 24-pin lpp 7? mdp0046 el5323cl-t13 24-pin lpp 13? mdp0046 el5323cr 24-pin tssop - mdp0044 el5323cr-t7 24-pin tssop 7? mdp0044 el5323cr-t13 24-pin tssop 13? mdp0044 el5423cl 32-pin lpp - mdp0046 el5423cl-t7 32-pin lpp 7? mdp0046 el5423cl-t13 32-pin lpp 13? mdp0046 el5423cr 28-pin tssop - mdp0044 el5423cr-t7 28-pin tssop 7? mdp0044 el5423cr-t13 28-pin tssop 13? mdp0044 data sheet march 20, 2002
2 pinouts 19 18 17 16 15 14 13 2 4 2 3 2 2 2 1 2 0 8 9 1 0 1 1 1 2 1 2 3 4 5 6 7 el5223 & el5323 (24-pin lpp) top view thermal pad vin3 vin4 vin5 vs+ vin6 vin7 vin8 vout3 vout4 vout5 vs- vout6 vout7 vout8 v i n 2 v i n 1 * n c v o u t 1 * v o u t 2 v i n 9 c v i n 1 0 * n c v o u t 1 0 * v o u t 9 * not available in el5223 25 24 23 22 21 20 19 3 2 3 1 3 0 2 9 2 8 1 0 1 1 1 2 1 3 1 4 1 2 3 4 5 6 7 el5423 (32-pin lpp) top view thermal pad vin3 vin4 vin5 vin6 vs+ vin7 vin8 vout3 vout4 vout5 vout6 vs- vout7 vout8 v i n 2 v i n 1 n c n c n c v i n 1 1 v i n 1 2 n c n c n c 8 9 18 17 1 5 2 7 1 6 2 6 vout9 vout10 v o u t 1 2 v o u t 1 1 vin9 vin10 v o u t 1 v o u t 2 1 2 3 4 16 15 14 13 5 6 7 12 11 9 8 10 20 19 18 17 24 23 22 21 28 27 26 25 vout1 vin1 vin2 vin3 vin4 vin5 vin6 vs+ vs+ vin7 vout2 vout3 vout4 vout5 vout6 vs- vs- vout7 vin8 vout8 vin9 vout9 vin1o vout10 vin11 vin12 vout11 vout12 1 2 3 4 16 15 14 13 5 6 7 12 11 9 8 10 20 19 18 17 24 23 22 21 vout1 vin1 vin2 vin3 vin4 vin5 vs+ vs+ vin6 vin7 vout2 vout3 vout4 vout5 vs- vs- vout6 vout7 vin8 vout8 vin9 vout9 vin10 vout10 el5323 (24-pin tssop) top view el5423 (28-pin tssop) top view 1 2 3 4 10 9 8 7 EL5123 (10-pin msop) top view 5 6 vout1 vout2 vs- vout3 vout4 vin1 vin2 vs+ vin3 vin4 1 2 3 4 16 15 14 13 5 6 7 12 11 9 8 10 el5223 (20-pin tssop) top view 20 19 18 17 vin1 vin2 vin3 vin4 vs+ vin5 vin6 vin7 vin8 vout1 vout2 vout3 vout4 vs- vs- vout5 vout6 vout7 vout8 vs+ EL5123, el5223, el5323, el5423
3 absolute maximum ratings (t a = 25c) supply voltage between v s + and v s - . . . . . . . . . . . . . . . . . . . . +18v input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . v s - -0.5v, v s +0.5v maximum continuous output current . . . . . . . . . . . . . . . . . . . 30ma maximum die temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125c storage temperature . . . . . . . . . . . . . . . . . . . . . . . . -65c to +150c operating temperature . . . . . . . . . . . . . . . . . . . . . . . -40c to +85c power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see curves esd voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kv caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress on ly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. important note:all parameters having min/max specifications are guaranteed. typical values are for information purposes only. un less otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: t j = t c = t a electrical specifications v s + = +5v, v s - = -5v, r l = 10k w and c l = 10pf to 0v, t a = 25c unless otherwise specified. parameter description condition min typ max unit input characteristics v os input offset voltage v cm = 0v 0.5 12 mv tcv os average offset voltage drift (note 1) 5 v/c i b input bias current v cm = 0v 2 50 na r in input impedance 1 g w c in input capacitance 1.35 pf a v voltage gain -4.5v v out 4.5v 0.99 1.01 v/v output characteristics v ol output swing low i l = -5ma -4.95 -4.85 v v oh output swing high i l = +5ma 4.85 4.95 v i out (max) output current (note 2) r l = 10 w 120 ma power supply performance psrr power supply rejection ratio v s is moved from 2.25v to 7.75v 55 80 db i s supply current no load (EL5123) 2.4 3.4 ma no load (el5223) 5.5 6.8 ma no load (el5323) 6 8.5 ma no load (el5423) 7.45 10.1 ma dynamic performance sr slew rate (note 3) -4.0v v out 4.0v, 20% to 80% 7 15 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 250 ns bw -3db bandwidth r l = 10k w , c l = 10pf 12 mhz cs channel separation f = 5mhz 75 db notes: 1.measured over operating temperature range. 2.instantaneous peak current. 3.slew rate is measured on rising and falling edges. EL5123, el5223, el5323, el5423
4 electrical specifications v s + =+5v, v s - = 0v, r l = 10k w and c l = 10pf to 2.5v, t a = 25c unless otherwise specified. parameter description condition min typ max unit input characteristics v os input offset voltage v cm = 2.5v 0.5 12 mv tcv os average offset voltage drift (note 1) 5 v/c i b input bias current v cm = 2.5v 2 50 na r in input impedance 1 g w c in input capacitance 1.35 pf a v voltage gain 0.5v v out 4.5v 0.99 1.01 v/v output characteristics v ol output swing low i l = -2.5ma 80 150 mv v oh output swing high i l = +2.5ma 4.85 4.92 v i out (max) output current (note 2) r l = 10 w 120 ma power supply performance psrr power supply rejection ratio v s is moved from 4.5v to 15.5v 55 80 db i s supply current no load (EL5123) 2.4 3.2 ma no load (el5223) 5.2 6.5 ma no load (el5323) 5.8 8 ma no load (el5423) 7.2 9.7 ma dynamic performance sr slew rate (note 3) 1v v out 4v, 20% to 80% 12 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 250 ns bw -3db bandwidth r l = 10k w , c l = 10pf 12 mhz cs channel separation f = 5mhz 75 db notes: 1.measured over operating temperature range. 2.instantaneous peak current. 3.slew rate is measured on rising and falling edges electrical specifications v s + = +15v, v s - = 0v, r l = 10k w and c l = 10pf to 7.5v, t a = 25c unless otherwise specified. parameter description condition min typ max unit input characteristics v os input offset voltage v cm = 7.5v 0.5 14 mv tcv os average offset voltage drift (note 1) 5 v/c i b input bias current v cm = 7.5v 2 50 na r in input impedance 1 g w c in input capacitance 1.35 pf a v voltage gain 0.5v v out 14.5v 0.99 1.01 v/v output characteristics v ol output swing low i l = -7.5ma 80 150 mv v oh output swing high i l = +7.5ma 14.85 14.95 v i out (max) output current (note 2) r l = 10 w 120 200 ma EL5123, el5223, el5323, el5423
5 power supply performance psrr power supply rejection ratio v s is moved from 4.5v to 15.5v 55 80 db i s supply current no load (EL5123) 2.4 3.7 ma no load (el5223) 5.7 7.1 ma no load (el5323) 6.2 8.7 ma no load (el5423) 7.8 10.4 ma dynamic performance sr slew rate (note 3) 1v v out 14v, 20% to 80% 18 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 250 ns bw -3db bandwidth r l = 10k w , c l = 10pf 12 mhz cs channel separation f = 5mhz 75 db notes: 1.measured over operating temperature range. 2.instantaneous peak current. 3.slew rate is measured on rising and falling edges. electrical specifications v s + = +15v, v s - = 0v, r l = 10k w and c l = 10pf to 7.5v, t a = 25c unless otherwise specified. parameter description condition min typ max unit EL5123, el5223, el5323, el5423
6 typical performance curves output swing vs frequency 12 10 8 6 4 2 0 10k 100k 1m 10m frequency (hz) v o p - p ( v ) v s = 5v r l = 10k w total harmonic distortion + noise vs frequency 0.018 0.016 0.014 0.012 0.01 0.008 0.006 1k 10k 100k frequency (hz) t h d + n o i s e ( % ) overshoot vs load capacitance 80 70 60 50 40 20 0 10 100 1k capacitance (pf) o v e r s h o o t ( % ) 30 10 v s =5v r l =10k w v in =100m settling time vs step size 10 8 6 4 2 -6 -10 200 400 650 settling time (ns) s t e p s i z e ( v ) -2 -8 0 -4 250 300 350 450 500 550 600 v s = 5v r l = 10k w c l = 12pf n o r m a l i z e d m a g n i t u d e ( d b ) frequency response for various c l 20 10 0 -10 -20 -30 100k 1m 10m 100m frequency (hz) v s = 5v r l = 10k w 100pf 1000pf 12pf 47pf n o r m a l i z e d m a g n i t u d e ( d b ) frequency response for various r l 20 10 0 -10 -20 -30 100k 1m 10m 100m frequency (hz) v s = 5v c l = 10pf 1k w 10k w 562 w 150 w v s = 5v r l = 10k w v in = 2 v p-p v s = 5v r l = 10k w v in = 100mv EL5123, el5223, el5323, el5423
7 typical performance curves (continued) p s r r ( d b ) psrr vs frequency 100 80 60 40 20 0 1k 10k 1m 10m frequency (hz) v s = 5v psrr- psrr+ 100k o u t p u t i m p e d a n c e ( w ) output impedance vs frequency 600 480 360 240 120 0 100k 1m 10m 100m frequency (hz) v s = 5v t a = 25c v o l t a g e n o i s e ( n v / ? h z ) input noise special density vs frequency 100 10 1 10k 100k 10m 100m frequency (hz) 1m input offset voltage distribution 25 20 15 10 5 0 - 6 - 4 - 2 0 2 4 6 input offset voltage (mv) % o f b u f f e r s input bias current vs temperature 2.5 1.5 0.5 -0.5 -1.5 -2.5 85 temperature (c) i n p u t b i a s c u r r e n t ( n a ) -35 -15 5 25 45 65 v s = 5v output high voltage vs temperature 4.955 4.95 4.945 4.94 4.935 4.925 85 temperature (c) o u t p u t h i g h v o l t a g e ( v ) -35 -15 5 25 45 65 4.93 v s = 5v i out = 5ma EL5123, el5223, el5323, el5423
8 typical performance curves (continued) slew rate vs temperature 15.1 14.1 85 temperature (c) s l e w r a t e ( v / s ) -35 -15 5 25 45 65 14.9 14.7 14.5 14.3 output low voltage vs temperature -4.934 -4.938 -4.942 -4.946 -4.954 85 temperature (c) o u t p u t l o w v o l t a g e ( v ) -35 -15 5 25 45 65 -4.95 voltage gain vs temperature 1.001 1.000 1 0.999 85 temperature (c) v o l t a g e g a i n ( v / v ) -35 -15 5 25 45 65 1.001 v s = 5v v s = 5v v s = 5v i out = -5ma supply current per channel vs supply voltage 0.71 0.7 0.69 0.67 0.65 0.63 18 supply voltage (v) s u p p l y c u r r e n t ( m a ) 4 6 10 12 14 16 t a = 25c supply current per channel vs temperature 0.62 85 temperature (c) s u p p l y c u r r e n t ( m a ) -35 -15 5 25 45 65 v s = 5v 0.63 0.66 0.65 0.64 0.68 0.66 0.64 8 small signal transient response 200ns/div 50mv/div v s = 5v r l = 10k w c l = 12pf EL5123, el5223, el5323, el5423
9 typical performance curves (continued) large signal transient response 1s/div 1v/div package power dissipation vs ambient temperature jedec jesd51-7 high effective thermal conductivity (4-layer) test board, lpp exposed diepad soldered to pcb per jesd51-5 3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 85 ambient temperature (c) p o w e r d i s s i p a t i o n ( w ) 2.703w 2.857w l p p 3 2 = 3 5 c / w l p p 2 4 = 3 7 c / w package power dissipation vs ambient temperature jedec jesd51-7 high effective thermal conductivity test board 1.4 0 ambient temperature (c) p o w e r d i s s i p a t i o n ( w ) 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 85 1.111w 1.333w 1.176w tssop28 q ja =75c/w tssop24 q ja =85c/w tssop20 q ja =90c/w package power dissipation vs ambient temperature jedec jesd51-3 low effective thermal conductivity test board 0.6 0 0.3 p o w e r d i s s i p a t i o n ( w ) 0.5 0.1 0 100 75 50 25 ambient temperature (c) 125 0.2 0.4 85 486mw m s o p 1 0 2 0 6 c / w package power dissipation vs ambient temperature jedec jesd51-3 low effective thermal conductivity test board 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 ambient temperature (c) p o w e r d i s s i p a t i o n ( w ) 85 714mw 833mw 781mw tssop28 q ja =120c/w tssop24 q ja =128c/ tssop20 q ja =140c/w package power dissipation vs ambient temperature jedec jesd51-7 high effective thermal conductivity test board 1 0.9 0.8 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 ambient temperature (c) p o w e r d i s s i p a t i o n ( w ) 85 870mw 0.7 m s o p 1 0 1 1 5 c / w tssop24 q ja =128c/w package power dissipation vs ambient temperature jedec jesd51-3 and semi g42-88 (single layer) test board 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 125 150 ambient temperature (c) p o w e r d i s s i p a t i o n ( w ) 100 85 714mw 758mw lpp32 132c/w lpp24 140c/w EL5123, el5223, el5323, el5423
10 applications information product description the EL5123, el5223, el5323, and el5423 unity gain buffers are fabricated using a high voltage cmos process. it exhibits rail-to-rail input and output capability and has low power consumption (600a per buffer). these features make the EL5123, el5223, el5323, and el5423 ideal for a wide range of general-purpose applications. when driving a load of 10k w and 12pf, the EL5123, el5223, el5323, and el5423 have a -3db bandwidth of 12mhz and exhibits 15v/s slew rate. operating voltage, input, and output the EL5123, el5223, el5323, and el5423 are specified with a single nominal supply voltage from 5v to 15v or a split supply with its total range from 5v to 15v. correct operation is guaranteed for a supply range of 4.5v to 16.5v. most EL5123, el5223, el5323, and el5423 specifications are stable over both the full supply range and operating temperatures of -40c to +85c. parameter variations with operating voltage and/or temperature are shown in the typical performance curves. the output swings of the EL5123, el5223, el5323, and el5423 typically extend to within 50mv of positive and negative supply rails with load currents of 5ma. decreasing load currents will extend the output voltage range even closer to the supply rails. figure 1 shows the input and output waveforms for the device. operation is from 5v supply with a 10k w load connected to gnd. the input is a 10v p-p sinusoid. the output voltage is approximately 9.985v p-p . short circuit current limit the EL5123, el5223, el5323, and el5423 will limit the short circuit current to 120ma if the output is directly shorted to the positive or the negative supply. if an output is shorted indefinitely, the power dissipation could easily increase such that the device may be damaged. maximum reliability is maintained if the output continuous current never exceeds 30ma. this limit is set by the design of the internal metal interconnects. output phase reversal the EL5123, el5223, el5323, and el5423 are immune to phase reversal as long as the input voltage is limited from v s - -0.5v to v s + +0.5v. figure 2 shows a photo of the output of the device with the input voltage driven beyond the supply rails. although the device's output will not change phase, the input's overvoltage should be avoided. if an input voltage exceeds supply voltage by more than 0.6v, electrostatic protection diodes placed in the input stage of the device begin to conduct and overvoltage damage could occur. power dissipation with the high-output drive capability of the EL5123, el5223, el5323, and el5423 buffer, it is possible to exceed the 125c ?absolute-maximum junction temperature? under certain load current conditions. therefore, it is important to calculate the maximum junction temperature for the application to determine if load conditions need to be modified for the buffer to remain in the safe operating area. the maximum power dissipation allowed in a package is determined according to: where: t jmax = maximum junction temperature t amax = maximum ambient temperature q ja = thermal resistance of the package p dmax = maximum power dissipation in the package the maximum power dissipation actually produced by an ic is the total quiescent supply current times the total power supply voltage, plus the power in the ic due to the loads, or: when sourcing, and o u t p u t i n p u t 5v 5v 10s v s = 5v t a = 25c v in = 10v p-p 1v 1v 10s v s =2.5v t a =25c v in =6v p-p figure 2.operation with beyond-the- rails input p dmax t jmax t amax ? q d ja --------------------------------------------- = p dmax s iv [ s i smax v s + ( v out i ) i load i ] ? + = p dmax s iv [ s i smax v ( out iv s - ) i load i ? + ] = EL5123, el5223, el5323, el5423 figure 1.operation with rail-to-rail input and output
11 all intersil u.s. products are manufactured, assembled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications can be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design, softw are and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patent s or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiarie s. for information regarding intersil corporation and its products, see www.intersil.com when sinking. where: i = 1 to total number of buffers v s = total supply voltage i smax = maximum quiescent current per channel v out i = maximum output voltage of the application i load i = load current if we set the two p dmax equations equal to each other, we can solve for r load i to avoid device overheat. the package power dissipation curves provide a convenient way to see if the device will overheat. the maximum safe power dissipation can be found graphically, based on the package type and the ambient temperature. by using the previous equation, it is a simple matter to see if p dmax exceeds the device's power derating curves. unused buffers it is recommended that any unused buffer have the input tied to the ground plane. driving capacitive loads the EL5123, el5223, el5323, and el5423 can drive a wide range of capacitive loads. as load capacitance increases, however, the -3db bandwidth of the device will decrease and the peaking increase. the buffers drive 10pf loads in parallel with 10k w with just 1.5db of peaking, and 100pf with 6.4db of peaking. if less peaking is desired in these applications, a small series resistor (usually between 5 w and 50 w ) can be placed in series with the output. however, this will obviously reduce the gain slightly. another method of reducing peaking is to add a ?snubber? circuit at the output. a snubber is a shunt load consisting of a resistor in series with a capacitor. values of 150 w and 10nf are typical. the advantage of a snubber is that it does not draw any dc load current or reduce the gain. power supply bypassing and printed circuit board layout as with any high frequency device, good printed circuit board layout is necessary for optimum performance. ground plane construction is highly recommended, lead lengths should be as short as possible, and the power supply pins must be well bypassed to reduce the risk of oscillation. for normal single supply operation, where the v s - pin is connected to ground, a 0.1f ceramic capacitor should be placed from v s + pin to ground. a 4.7f tantalum capacitor should then be connected from v s + pin to ground. one 4.7f capacitor may be used for multiple devices. this same capacitor combination should be placed at each supply pin to ground if split supplies are to be used. EL5123, el5223, el5323, el5423

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