TSM7N65 650v n-channel power mosfet 1/9 version: a09 ito-220 to-220 general description the TSM7N65 n-channel enhancement mode power mosfet is produced by planar stripe dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. features low r ds(on) 1.2 ? (max.) low gate charge typical @ 32nc (typ.) low crss typical @ 25pf (typ.) fast switching ordering information part no. package packing TSM7N65cz c0 to-220 50pcs / tube TSM7N65ci c0 ito-220 50pcs / tube absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v ta = 25oc 6.4 a continuous drain current ta = 100oc i d 3.8 a pulsed drain current * i dm 22 a single pulse avalanche energy (note 2) e as 216 mj avalanche current (repetitive) (note 1) i ar 6 a to-220 125 maximum power dissipation @ tc = 25 o c ito-220 p d 30 w operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c * limited by maximum junction temperature product summary v ds (v) r ds(on) ( ? ) i d (a) 650 1.2 @ v gs =10v 3 block diagram n-channel mosfet pin definition: 1. gate 2. drain 3. source
TSM7N65 650v n-channel power mosfet 2/9 version: a09 thermal performance parameter symbol limit unit to-220 1.0 thermal resistance - junction to case ito-220 r ? jc 4.2 o c/w thermal resistance - junction to ambient r ? ja 62.5 o c/w notes: surface mounted on fr4 board t 10sec electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 650 -- -- v drain-source on-state resistance v gs = 10v, i d = 3a r ds(on) -- 1.0 1.2 ? gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.0 -- 4.0 v v ds = 650v, v gs = 0v -- -- 1 zero gate voltage drain current v ds = 650v, v gs = 0v, t c =125oc i dss -- -- 50 ua gate body leakage v gs = 20v, v ds = 0v i gss -- -- 10 ua forward transfer conductance v ds = 8v, i d = 1a g fs -- 3.7 -- s diode forward voltage i s = 6a, v gs = 0v v sd -- -- 1.6 v dynamic b total gate charge q g -- 32 46 gate-source charge q gs -- 6 -- gate-drain charge v ds = 300v, i d = 6a, v gs = 10v q gd -- 11 -- nc input capacitance c iss -- 905 -- output capacitance c oss -- 115 -- reverse transfer capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c rss -- 25 -- pf switching c turn-on delay time t d(on) -- 14 -- turn-on rise time t r -- 14 -- turn-off delay time t d(off) -- 47 -- turn-off fall time v gs = 10v, i d = 6a, v dd = 300v, r g = 25 ? t f -- 19 -- ns reverse recovery time t fr -- 638 -- ns reverse recovery charge v gs = 0v, i s = 6a, di f /dt = 100a/us q fr -- 4.8 -- uc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. v dd = 50v, i as =3.6a, l=30mh, v ds =500v 3. pulse test: pulse width 300us, duty cycle 2% 4. essentially independent of operating temperature
TSM7N65 650v n-channel power mosfet 3/9 version: a09 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
TSM7N65 650v n-channel power mosfet 4/9 version: a09 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage maximum safe operating area - to-220 maximum safe operating area - ito-220 normalized thermal transient impedance, junction-to-ambient
TSM7N65 650v n-channel power mosfet 5/9 version: a09 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
TSM7N65 650v n-channel power mosfet 6/9 version: a09 diode reverse recovery time test circuit & waveform
TSM7N65 650v n-channel power mosfet 7/9 version: a09 ito-220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code ito-220 dimension millimeters inches dim min max min max a 10.04 10.07 0.395 0.396 b 6.20 (typ.) 0.244 (typ.) c 2.20 (typ.) 0.087 (typ.) d 1.40 (typ.) 0.055 (typ.) e 15.0 15.20 0.591 0.598 f 0.52 0.54 0.020 0.021 g 2.35 2.73 0.093 0.107 h 13.50 13.55 0.531 0.533 i 1.11 1.49 0.044 0.058 j 2.60 2.80 0.102 0.110 k 4.49 4.50 0.176 0.177 l 1.15 (typ.) 0.045 (typ.) m 3.03 3.05 0.119 0.120 n 2.60 2.80 0.102 0.110 o 6.55 6.65 0.258 0.262
TSM7N65 650v n-channel power mosfet 8/9 version: a09 to-220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-220 dimension millimeters inches dim min max min max a 10.000 10.500 0.394 0.413 b 3.740 3.910 0.147 0.154 c 2.440 2.940 0.096 0.116 d - 6.350 - 0.250 e 0.381 1.106 0.015 0.040 f 2.345 2.715 0.092 0.058 g 4.690 5.430 0.092 0.107 h 12.700 14.732 0.500 0.581 j 14.224 16.510 0.560 0.650 k 3.556 4.826 0.140 0.190 l 0.508 1.397 0.020 0.055 m 27.700 29.620 1.060 1.230 n 2.032 2.921 0.080 0.115 o 0.255 0.610 0.010 0.024 p 5.842 6.858 0.230 0.270
TSM7N65 650v n-channel power mosfet 9/9 version: a09 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibilit y or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. exce pt as provided in tsc?s term s and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liab ility or warranties relating to fitness fo r a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own ri sk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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