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jmnic product specification silicon pnp power transistors 2SB1640 description ? with ito-220 package ? low collector saturation voltage ? complement to type 2sd2525 applications ? audio frequency power amplifier pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol param eter conditions va lue unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -7 v i c collector current -3 a i b base current -0.5 a p c collector power dissipation t c =25 ?? 1.8 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (ito-220) and symbol
jmnic product specification 2 silicon pnp power transistors 2SB1640 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -60 v v cesat collector-emitter saturation voltage i c =-2a; i b =-0.2a -1.0 -1.5 v v be base-emitter on voltage i c =-0.5a ; v ce =-5v -0.75 -1.0 v i cbo collector cut-off current v cb =-60v ;i e =0 -10 | a i ebo emitter cut-off current v eb =-7v ;i c =0 -10 | a h fe-1 dc current gain i c =-0.5a ; v ce =-5v 100 320 h fe-2 dc current gain i c =-2a ; v ce =-5v 15 f t transition frequency i c =-0.5a ; v ce =-5v 9 mhz c ob output capacitance i e =0; v cb =-10v;f=1mhz 50 pf
jmnic product specification 3 silicon pnp power transistors 2SB1640 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.20 mm)

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