document number: 93182 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 1 fast recovery diodes (hockey puk version), 990 a sd853c..s50k series vishay high power products features ? high power fast recovery diode series ? 5.0 s recovery time ? high voltage ratings up to 4500 v ? high current capability ? optimized turn-on and turn-off characteristics ? low forward recovery ? fast and soft reverse recovery ? press puk encapsulation ? case style conform to jedec do-200ac (k-puk) ? maximum junction temperature 125 c ? lead (pb)-free ? designed and qualified for industrial level typical applications ? snubber diode for gto ? high voltage freewheeling diode ? fast recovery rectifier applications product summary i f(av) 990 a do-200ac (k-puk) rohs compliant major ratings and characteristics parameter test conditions values units i f(av) 990 a t hs 55 c i f(rms) 1800 a t hs 25 c i fsm 50 hz 19 000 a 60 hz 19 900 i 2 t 50 hz 1810 ka 2 s 60 hz 1652 v rrm range 3000 to 4500 v t rr 5.0 s t j 25 c t j - 40 to 125
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93182 2 revision: 14-may-08 sd853c..s50k series vishay high power products fast recovery diodes (hockey puk version), 990 a electrical specifications voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = 125 c ma sd853c..s50k 30 3000 3100 100 36 3600 3700 40 4000 4100 45 4500 4600 forward conduction parameter symbol test conditions values units maximum average forward current at heatsink temperature i f(av) 180 conduction, half sine wave double side (single side) cooled 990 (420) a 55 (85) c maximum rms forward current i f(rms) 25 c heatsink temperature double side cooled 1800 a maximum peak, one-cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 19 000 t = 8.3 ms 19 900 t = 10 ms 50 % v rrm reapplied 16 000 t = 8.3 ms 16 750 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 1805 ka 2 s t = 8.3 ms 1645 t = 10 ms 50 % v rrm reapplied 1280 t = 8.3 ms 1165 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 18 050 ka 2 s low level value of threshold voltage v f(to)1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 1.50 v high level value of threshold voltage v f(to)2 (i > x i f(av) ), t j = t j maximum 1.67 low level value of forward slope resistance r f1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.70 m high level value of forward slope resistance r f2 (i > x i f(av) ), t j = t j maximum 0.65 maximum forward voltage drop v fm i pk = 2000 a, t j = 125 c; t p = 10 ms sinusoidal wave 2.90 v recovery characteristics code maximum value at t j = 25 c test conditions typical values at t j = 125 c t rr at 25 % i rrm (s) i pk square pulse (a) di/dt (a/s) v r (v) t rr at 25 % i rrm (s) q rr (c) i rr (a) s50 5.0 1000 100 - 50 6.5 1000 270 i fm t rr dir dt i rm(rec) q rr t
document number: 93182 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 3 sd853c..s50k series fast recovery diodes (hockey puk version), 990 a vishay high power products note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at diffe rent conduction angles than dc thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to heatsink r thj-hs dc operation single side cooled 0.04 k/w dc operation double side cooled 0.02 mounting force, 10 % 22 250 (2250) n (kg) approximate weight 425 g case style see dimensions - link at the end of datasheet do-200ac (k-puk) r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.0017 0.0019 0.0012 0.0012 t j = t j maximum k/w 120 0.0021 0.0021 0.0021 0.0021 90 0.0026 0.0027 0.0029 0.0029 60 0.039 0.0039 0.0041 0.0041 30 0.0067 0.0067 0.0068 0.0068
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93182 4 revision: 14-may-08 sd853c..s50k series vishay high power products fast recovery diodes (hockey puk version), 990 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5 - forward power loss characteristics fig. 6 - forward power loss characteristics 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 30 60 90 120 180 average forward current (a) maximum allowable heatsink temperature (c) conduction angle sd853c..s50k serie s (single side cooled) r (dc) = 0.04 k/ w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 30 60 90 180 dc 120 average forward current (a) maximum allowable heatsink temperature (c) conduction period sd853c..s50k series (single side cooled) r (dc) = 0.04 k/ w thj-hs 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 30 60 90 120 180 average forward current (a) maximum allowable heatsink temperature (c) conduction angle sd853c..s50k series (double side cooled) r (dc) = 0.02 k/ w thj-hs 10 20 30 40 50 60 70 80 90 100 110 120 130 0 400 800 1200 1600 2000 30 60 90 180 dc 120 avera ge forward current (a) maximum allowable heatsink temperature (c ) conduction period sd 8 5 3 c . . s5 0 k se r i e s (double side cooled) r (dc) = 0.02 k/ w thj-hs 0 500 1000 1500 2000 2500 3000 3500 4000 0 200 400 600 800 1000 1200 180 120 90 60 30 average forward current (a) maximum average forward power loss (w) rm s li m i t conduction angle sd 8 5 3 c . . s5 0 k se r i e s t = 125c j 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 400 800 1200 1600 2000 dc 180 120 90 60 30 average forward current (a) rm s li m i t maximum average forward power loss (w) conduction period sd 8 5 3 c . . s5 0 k se r i e s t = 125c j
document number: 93182 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 5 sd853c..s50k series fast recovery diodes (hockey puk version), 990 a vishay high power products fig. 7 - maximum non-repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled fig. 9 - forward voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics fig. 11 - typical forward recovery characteristics 4000 6000 8000 10000 12000 14000 16000 18000 110100 number of equal amplitude half cycle current pulses (n) pea k ha lf sine wave forw a rd current (a) sd853c..s50k series init ia l t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with 50% rated v applied following surge rrm 4000 6000 8000 10000 12000 14000 16000 18000 20000 0.01 0.1 1 pu lse tra in du ra t io n ( s) maximum non repetitive surge current pea k ha lf s ine wa ve forward current (a) sd853c..s50k series init ia l t = 125c versus pulse tra in dura tion. no voltage reapplied 50% rated v reapplied rrm j 100 1000 10000 123456789 t = 2 5 c j instantaneous forward voltage (v) instantaneous forward current (a) t = 1 2 5 c j sd853c..s50k series 0.0001 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 sq u a r e w a v e pu l se d u r a t i o n ( s) thj-hs transient thermal impedance z (k/ w) steady state value r = 0.04 k/ w (single side cooled) r = 0.02 k/ w (double side cooled) (dc operation) thj-hs thj-hs sd853c..s50k series 0 50 100 150 200 250 300 0 200 400 600 800 1000 1200 1400 1600 1800 2000 forward recovery (v) t = 125c t = 2 5 c j j sd853c..s50k series ra t e o f ri se o f fo r w a r d c u r r e n t - d i / d t ( a / u s) i v fp
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93182 6 revision: 14-may-08 sd853c..s50k series vishay high power products fast recovery diodes (hockey puk version), 990 a fig. 12 - recovery time characteristics fig. 13 - recovery charge characteristics fig. 14 - recovery current characteristics fig. 15 - maximum total energy loss per pulse characteristics fig. 16 - frequency characteristics fig. 17 - maximum total energy loss per pulse characteristics 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 10 100 1000 rate of fall of forward current - di/ dt (a/ s) ma ximum reverse rec overy time - trr (s) 500 a i = 1500 a si n e p u l se 1000 a fm sd853c..s50k series t = 125 c; v > 100v j r 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 0 50 100 150 200 250 300 maximum reverse recovery charge - qrr (c) ra te of fa ll of fo rwa rd current - d i/ d t (a/ s) 500 a i = 1500 a si n e p u l se 1000 a fm sd 8 5 3 c . . s5 0 k se r i e s t = 125 c; v > 100v j r 0 100 200 300 400 500 600 700 800 0 50 100 150 200 250 300 m a x i m u m re v e r se re c o v e r y c u r r e n t - ir r ( a ) 500 a ra te of fa ll of forwa rd current - d i/ d t (a/ s) i = 1500 a si n e p u l s e 1000 a fm sd 8 5 3 c . . s5 0 k se r i e s t = 125 c; v > 100v j r 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pu lse ba se w id t h ( s) peak forward current (a) 10 joules per pulse 6 4 dv/dt = 1000v/s t = 125c, v = 1500v j rrm si n u so i d a l pu l s e 0.8 0.6 0.4 0.2 sd853c..s50k se ries tp 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pu l se ba se w i d t h ( s) 50 hz 200 10000 100 4000 d v/ d t = 1000v/ us 400 1000 2000 6000 peak forward current (a) si n u so i d a l p u l se sd 8 5 3 c . . s 50k series t = 55c, v = 1500v c rrm 600 1500 tp 3000 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pu l se ba se w i d t h ( s) 4 10 joules per pulse 6 trapezoidal pulse pea k forwa rd current (a) t = 125c, v = 1500v j rrm sd 8 5 3 c . . s5 0 k se r i e s dv/dt = 1000v/s d i/ d t = 300a/ s 0.8 0.6 tp 8 0.4
document number: 93182 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 7 sd853c..s50k series fast recovery diodes (hockey puk version), 990 a vishay high power products fig. 18 - frequency characteristics f ig. 19 - maximum total energy loss per pulse characteristics fig. 20 - frequency characteristics 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pu l se ba se w i d t h ( s) trapezoidal pulse 50 hz 100 200 400 1000 1500 2000 4000 3000 600 t = 55c, v = 1500v rrm 6000 10000 pea k forwa rd current (a) sd 8 5 3 c . . s5 0 k se r i e s d v/ dt = 1000v/ us, di/dt = 300a/us c tp 1e2 1e3 1e4 1 e1 1 e2 1 e3 1 e4 1 2 pulse basewidth (s) 4 10 joules p er p ulse 6 trapezoidal pulse pea k forwa rd current (a) t = 1 2 5 c , v = 1 5 0 0 v j rrm sd853c..s50k se ries d v/ d t = 1000v/ s d i/ d t = 100a/ s 0.8 0.6 tp 0.4 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pu l se ba se w i d t h ( s) tr a p e z o i d a l p u l s e 50 hz 100 200 400 1000 1500 2000 4000 3000 600 t = 55c, v = 1500v 6000 10000 peak forward current (a) sd 8 5 3 c . . s 50k series dv/dt = 1000v/us, di/dt = 100a/us c rrm tp
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93182 8 revision: 14-may-08 sd853c..s50k series vishay high power products fast recovery diodes (hockey puk version), 990 a ordering information table 1 - diode 2 - essential part number 3 - 3 = fast recovery 4 - c = ceramic puk 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 -t rr code 7 - k = puk case do-200ac (k-puk) device code 5 13 24 67 sd 85 3 c 45 s50 k links to related documents dimensions http://www.vishay.com/doc?95247
document number: 95247 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 26-nov-07 1 do-200ac (k-puk) outline dimensions vishay semiconductors dimensions in millimeters (inches) 74.5 (2.93) dia. max. 67 (2.64) dia. max. quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specifications) 3.5 (0.14) dia. nom. x 1.8 (0.07) deep min. both ends 1 (0.04) min. both ends 47.5 (1.87) dia. max. 2 places 27.5 (1.08) max.
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