surface mount ultrafast plastic rectifier U1B thru u1d 100v-200v 1.0a web site: www.taychipst.com 1 of 2 features e-mail: sales@taychipst.com maximum ratings and electrical characteristics mechanical data ? oxide planar chip junction ? ultrafast recovery time ? low forward voltage, low power losses ? high forward surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec ? oxide planar chip junction ? ultrafast recovery time ? low forward voltage, low power losses ? high forward surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec maximum ratings (t a = 25 c unless otherwise noted) parameter symbol U1B u1c u1d unit device marking code U1B u1c u1d maximum repetitive peak reverse voltage v rrm 100 150 200 v maximum average forward rectified current (fig. 1) i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a operating junction and storage temperature range t j , t stg - 55 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage (1) i f = 0.6 a i f = 1.0 a t a = 25 c v f 0.82 0.87 0.87 0.92 v i f = 0.6 a i f = 1.0 a t a = 100 c 0.71 0.76 0.78 0.84 reverse current (2) rated v r t a = 25 c t a = 100 c i r - 55 5.0 100 a reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t a = 25 c t rr -15ns i f = 0.6 a, di/dt = 50 a/s, v r = 30 v, i rr = 0.1 i rm t a = 25 c t a = 100 c t rr 24 29 - - ns storage charge i f = 0.6 a, di/dt = 50 a/s, v r = 30 v, i rr = 0.1 i rm t a = 25 c t a = 100 c q rr 7 13 - - nc typical junction capacitance 4.0 v, 1 mhz c j 6.8 - pf
ratings and characteristic curves U1B thru u1d e-mail: sales@taychipst.com web site: www.taychipst.com 2 of 2 surface mount ultrafast plastic rectifier U1B thru u1d 100v-200v 1.0a figure 1. forward derating curve 8 0 1.2 t m - mo u nt temperat u re (c) 0 0.4 90 120 150 0. 8 0.6 0.2 100 110 140 1.0 130 a v erage for w ard c u rrent (a) figure 2. forward power loss characteristics 0 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) 0 0.4 0.2 0. 8 1.2 0. 8 0.6 0.2 0.4 0.6 1.0 1.0 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 d = 0.2 d = 0.1 d = t p /t t p t figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics 0.1 10 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0.01 0.1 0.3 0.9 1.3 t a = 150 c 1 0.5 0.7 1.1 t a = 125 c t a = 100 c t a = 25 c t a = 150 c 10 10 1000 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) 1 0.1 0.01 100 20 30 40 50 60 70 8 0 90 100 t a = 125 c t a = 100 c t a = 25 c figure 5. typical junction capacitance figure 6. typical trans ient thermal impedance 0.1 10 re v erse v oltage ( v ) j u nction capactiance (pf) 1 1 10 100 t j = 25 c f = 1.0 mhz v stg = 50 m v p-p 0.001 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w ) 1 0.01 0.1 1 10 100 j u nction to am b ient
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