mosfets silicon n-channel mos (u-mos -h) TK40P03M1 1. 1. 1. 1. applications applications applications applications ? dc-dc converters ? desktop pcs 2. 2. 2. 2. features features features features (1) high-speed switching (2) low gate charge: q sw = 5.7 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 8.3 m ? (typ.) (v gs = 10 v) (4) low leakage current: i dss = 10 a (max) (v ds = 30 v) (5) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1: gate 2: drain (heatsink) 3: source dpak 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics drain-source voltage gate-source voltage drain current (dc) drain current (pulsed) power dissipation single-pulse avalanche energy avalanche current channel temperature storage temperature (t c = 25 ) (note 1) (note 1) (note 2) symbol v dss v gss i d i dp p d e as i ar t ch t stg rating 30 20 40 120 33 42 40 150 -55 to 150 unit v a w mj a note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. www.freescale.net.cn www.freescale.net.cn 1/8 7.30 026)(7v 6lolfrq1&kdqqho026 8026 3 + 7.30 7.30 7.30 7.30 $ssolfdwlrqv $ssolfdwlrqv $ssolfdwlrqv $ssolfdwlrqv ? '&'&&rqyhuwhuv ? 'hvnwrs3&v )hdwxuhv )hdwxuhv )hdwxuhv )hdwxuhv +ljkvshhgvzlwfklqj /rzjdwhfkdujh 4 6: q& w\s /rzgudlqvrxufhrquhvlvwdqfh 5 '6 21 p ? ? ? ? ? ? ? ? ??? '3$.
5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal characteristics characteristics channel-to-case thermal resistance channel-to-ambient thermal resistance symbol r th(ch-c) r th(ch-a) max 3.78 125 unit /w note 1: ensure that the channel temperature does not exceed 150 . note 2: v dd = 24 v, t ch = 25 (initial), l = 20 h, r g = 25 ? , i ar = 40 a note: this transistor is sensitive to electrostatic discharge and should be handled with care. www.freescale.net.cn www.freescale.net.cn 2/8 7.30 7khupdo&kdudfwhulvwlfv 7khupdo&kdudfwhulvwlfv 7khupdo&kdudfwhulvwlfv 7khupdo&kdudfwhulvwlfv &kdudfwhulvwlfv &kdqqhowrfdvhwkhupdouhvlvwdqfh &kdqqhowrdpelhqwwkhupdouhvlvwdqfh 6\pero 5 wk fkf 5 wk fkd 0d[ 8qlw : 1rwh (qvxuhwkdwwkhfkdqqhowhpshudwxuhgrhvqrwh[fhhg 1rwh 9 '' 97 fk lqlwldo / ?
6. 6. 6. 6. electrical characteristics electrical characteristics electrical characteristics electrical characteristics 6.1. 6.1. 6.1. 6.1. static characteristics (t static characteristics (t static characteristics (t static characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics gate leakage current drain cut-off current drain-source breakdown voltage gate threshold voltage drain-source on-resistance symbol i gss i dss v (br)dss v (br)dsx v th r ds(on) test condition v gs = 20 v, v ds = 0 v v ds = 30 v, v gs = 0 v i d = 10 ma, v gs = 0 v i d = 10 ma, v gs = -20 v v ds = 10 v, i d = 0.1 ma v gs = 4.5 v, i d = 20 a v gs = 10 v, i d = 20 a min 30 15 1.3 typ. 11.1 8.3 max 0.1 10 2.3 14.4 10.8 unit a v m ? 6.2. 6.2. 6.2. 6.2. dynamic characteristics (t dynamic characteristics (t dynamic characteristics (t dynamic characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics input capacitance reverse transfer capacitance output capacitance gate resistance switching time (rise time) switching time (turn-on time) switching time (fall time) switching time (turn-off time) symbol c iss c rss c oss r g t r t on t f t off test condition v ds = 10 v, v gs = 0 v, f = 1 mhz v ds = 10 v, v gs = 0 v, f = 5 mhz see figure 6.2.1. min typ. 1150 85 260 2.9 15 21 14 54 max 4.4 unit pf ? ns fig. fig. fig. fig. 6.2.1 6.2.1 6.2.1 6.2.1 switching time test circuit switching time test circuit switching time test circuit switching time test circuit 6.3. 6.3. 6.3. 6.3. gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics total gate charge (gate-source plus gate-drain) gate-source charge 1 gate-drain charge gate switch charge symbol q g q gs1 q gd q sw test condition v dd 24 v, v gs = 10 v, i d = 40 a v dd 24 v, v gs = 5 v, i d = 40 a v dd 24 v, v gs = 10 v, i d = 40 a min typ. 17.5 9.4 4.1 3.5 5.7 max unit nc 6.4. 6.4. 6.4. 6.4. source-drain characteristics (t source-drain characteristics (t source-drain characteristics (t source-drain characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics reverse drain current (pulsed) diode forward voltage (note 3) symbol i drp v dsf test condition i dr = 40 a, v gs = 0 v min typ. max 120 -1.2 unit a v note 3: ensure that the channel temperature does not exceed 150 . www.freescale.net.cn www.freescale.net.cn 3/8 7.30 (ohfwulfdo&kdudfwhulvwlfv (ohfwulfdo&kdudfwhulvwlfv (ohfwulfdo&kdudfwhulvwlfv (ohfwulfdo&kdudfwhulvwlfv 6wdwlf&kdudfwhulvwlfv 7 6wdwlf&kdudfwhulvwlfv 7 6wdwlf&kdudfwhulvwlfv 7 6wdwlf&kdudfwhulvwlfv 7 d d d d xqohvvrwkhuzlvhvshflilhg xqohvvrwkhuzlvhvshflilhg xqohvvrwkhuzlvhvshflilhg xqohvvrwkhuzlvhvshflilhg &kdudfwhulvwlfv *dwhohdndjhfxuuhqw 'udlqfxwriifxuuhqw 'udlqvrxufheuhdngrzqyrowdjh *dwhwkuhvkrogyrowdjh 'udlqvrxufhrquhvlvwdqfh 6\pero , *66 , '66 9 %5 '66 9 %5 '6; 9 wk 5 '6 21 7hvw&rqglwlrq 9 *6 ? ? ? ? ? ? ?
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