ssd40p04-20de -36a , -40v , r ds(on) 30m p-ch enhancement mode power mosfet elektronische bauelemente 2-dec-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 252(d - pack) a c d n o p g e f h k j m b rohs compliant product a suffix of -c specifies halogen free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipati on. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe to-252 saves board space. fast switch speed. high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, pri nters, pcmcia cards, cellular and cordless telephones. package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -40 v gate-source voltage v gs 20 v continuous drain current 1 i d -36 a pulsed drain current @t a =25c 2 i dm -40 a continuous source current (diode conduction) 1 i s -30 a total power dissipation @t a =25c 1 p d 50 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient 1 r ja 50 c / w maximum thermal resistance junction-case r jc 3 c / w notes 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure. ref. millimeter ref. millimeter min. max. min. max. a 6. 35 6.8 0 j 2.30 ref. b 5.20 5.50 k 0.64 0.90 c 2.15 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1. 65 e 6.8 7.5 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 5 h 0. 64 1.2 0 1 gate 3 source 2 drain
ssd40p04-20de -36a , -40v , r ds(on) 30m p-ch enhancement mode power mosfet elektronische bauelemente 2-dec-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) -1 - - v v ds = v gs, i d = -250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 25v zero gate voltage drain current i dss - - -1 a v ds = -24v, v gs =0 - - -5 v ds = -24v, v gs =0, t j =55c on-state drain current 1 i d(on) -41 - - a v ds = -5v, v gs = -10v drain-source on-resistance 1 r ds(on) - - 30 m v gs = -10v, i d = -36a - - 40 v gs = -4.5v, i d = -29a forward transconductance 1 g fs - 31 - s v ds = -15v, i d = -36a diode forward voltage v sd - -0.7 - v i s = -41a, v gs =0 dynamic 2 total gate charge q g - 13.9 30 nc v ds = -15v v gs = -4.5 v i d = -36a gate-source charge q gs - 5.2 20 gate-drain charge q gd - 5.8 20 input capacitance c iss - 1583 4000 pf v ds = -15v, v gs =0, f=1mhz output capacitance c oss - 278 600 reverse transfer capacitance c rss - 183 400 turn-on delay time t d(on) - 15 - ns v dd = -15v i d = -41a v gen = -10 v r l =15 ? r g =6 rise time t r - 12 - turn-off delay time t d(off) - 62 - fall time t f - 46 - notes: 1. pulse test pulse width Q 300 s, duty cycle Q 2 . 2. guaranteed by design, not subject to production testing.
ssd40p04-20de -36a , -40v , r ds(on) 30m p-ch enhancement mode power mosfet elektronische bauelemente 2-dec-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
ssd40p04-20de -36a , -40v , r ds(on) 30m p-ch enhancement mode power mosfet elektronische bauelemente 2-dec-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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