publication date : apr., 2011 1 < high-power gaas fet (small signal gain stage) > MGF0918A l & s band / 0.5w smd non - matched description the MGF0918A gaas fet with an n-channel schottky gate, is designed for use uhf band amplifiers. features ? high output power po=27dbm(typ.) @f=1.9ghz,pin=8dbm ? high power gain gp=20db(typ.) @f=1.9ghz ? high power added efficiency ? add=45%(typ.) @f=1.9ghz,pin=8dbm ? hermetic package application ? for uhf band power amplifiers quality ? gg recommended bias conditions ? vds=10v ? ids=150ma ? rg=1k ? delivery -01: tape & reel(1k), -03: trai(50pcs) absolute maximum ratings (ta=25 ? c) symbol parameter ratings unit v gso gate to source breakdown voltage -15 v v gdo gate to drain breakdown voltage -15 v i d drain current 400 ma i gr reverse gate current -1.2 ma i gf forward gate current 5.0 ma p t total power dissipation 3 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. i dss saturated drain current v ds =3v,v gs =0v - 300 400 ma v gs(off) gate to source cut-off voltage v ds =3v,i d =1.0ma -1.0 - -5.0 v gm transconductance v ds =3v,i d =150ma - 130 - ms po output power v ds =10v,i d =150ma,f=1.9ghz 25 27 - dbm ? add power added efficiency pin=8dbm - 35 - % g lp linear power gain 18 20 - db nf noise figure v ds =10v,i d =150ma,f=1.9ghz - 1.0 - db rth(ch-c) thermal resistance *1 ? vf method - 35 50 ? c/w *1: channel to case / above parameters, ratings, limits are subject to change. fig.1
< high-power gaas fet (small signal gain stage) > MGF0918A l & s band / 0.5w smd non - matched publication date : apr., 2011 2 MGF0918A typical characteristics po,gp,pae vs.pin 0 5 10 15 20 25 30 35 -10 -5 0 5 10 15 pin(dbm) po(dbm) 0 10 20 30 40 50 60 70 gp(db),pae(%) vds=10v id(off)=150ma f=1.9ghz po gp pae p i(s c l) vs.p o(s c l),im 3 -20 -15 -10 -5 0 5 10 15 20 25 30 -20 -15 -10 -5 0 5 10 15 pin(scl)(dbm) po(scl)(dbm) -70 -60 -50 -40 -30 -20 -10 0 10 20 30 im3(dbc) vd=10v id=150ma f1=1.90g hz f2=1.91g hz po im 3
< high-power gaas fet (small signal gain stage) > MGF0918A l & s band / 0.5w smd non - matched publication date : apr., 2011 3 MGF0918A s parameters (ta=25 ? c,vd=10v,id=150ma, reference plane see fig.1) freq. k mag/msg (mhz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) (db) 600 0.966 -47.70 6.220 142.02 0.015 56.75 0.302 -56.49 0.21 26.18 1000 0.939 -72.11 5.269 120.98 0.021 41.10 0.360 -78.28 0.29 24.00 1400 0.919 -90.91 4.470 103.95 0.024 27.49 0.426 -94.16 0.36 22.70 1800 0.905 -105.49 3.805 89.91 0.026 15.71 0.492 -105.68 0.42 21.65 2200 0.897 -116.96 3.257 78.05 0.026 5.60 0.553 -114.07 0.49 20.98 2600 0.892 -126.16 2.811 67.78 0.025 -3.00 0.606 -120.27 0.60 20.51 3000 0.890 -133.71 2.453 58.64 0.024 -10.20 0.651 -125.02 0.70 20.09 3400 0.889 -140.07 2.168 50.31 0.024 -16.12 0.687 -128.82 0.76 19.56 3800 0.888 -145.57 1.946 42.56 0.023 -20.89 0.716 -132.05 0.86 19.27 4200 0.886 -150.45 1.775 35.21 0.023 -24.64 0.738 -134.94 0.93 18.87 4600 0.883 -154.92 1.647 28.16 0.022 -27.52 0.754 -137.64 1.07 17.15 5000 0.877 -159.19 1.553 21.31 0.023 -29.72 0.768 -140.24 1.10 16.35 5400 0.868 -163.52 1.489 14.56 0.024 -31.42 0.779 -142.75 1.15 15.58 5800 0.856 -168.29 1.448 7.83 0.025 -32.85 0.788 -145.19 1.20 14.90 6200 0.840 -173.99 1.427 1.01 0.027 -34.23 0.797 -147.53 1.20 14.51 6600 0.820 177.60 1.423 -6.02 0.029 -35.84 0.806 -149.77 1.18 14.33 7000 0.797 172.89 1.433 -13.41 0.031 -37.92 0.814 -151.90 1.21 13.88 7400 0.771 162.95 1.457 -21.33 0.035 -40.74 0.820 -153.92 1.12 14.06 7800 0.743 154.14 1.491 -29.97 0.038 -44.55 0.824 -155.84 1.12 13.86 8200 0.713 146.69 1.536 -39.52 0.042 -49.58 0.824 -157.68 1.13 13.40 8600 0.674 137.66 1.587 -50.18 0.047 -56.03 0.818 -159.47 1.19 12.62 9000 0.618 123.53 1.643 -62.15 0.053 -64.03 0.806 -161.21 1.27 11.77 9400 0.545 102.00 1.699 -75.56 0.058 -73.66 0.786 -162.88 1.40 10.90 9800 0.485 73.05 1.748 -90.54 0.064 -84.89 0.759 -164.44 1.47 10.32 10200 0.475 39.23 1.782 -107.10 0.071 -97.58 0.723 -165.75 1.45 10.00 10600 0.535 5.13 1.788 -125.18 0.077 -111.47 0.678 -166.62 1.38 10.00 11000 0.640 -23.88 1.753 -144.56 0.082 -126.11 0.636 -166.73 1.22 10.44 11400 0.730 -43.68 1.656 -164.88 0.086 -140.87 0.609 -165.59 1.15 10.47 11800 0.813 -54.21 1.473 177.63 0.088 -154.90 0.607 -162.55 1.14 9.96 12200 0.876 -63.08 1.176 160.67 0.087 -167.09 0.636 -156.74 1.19 8.65 s11 s21 s12 s22 fig.1 outline drawing 0.80 0.25 (1) gate (2) drain (3) source 4.00 (2) 0.3 gate mark round corner (1) 4.20 (2) back side pattern 2.5 ( unit : mm) 0.6 2.0 0.8 (1) (3) gate mark 2.8 1.20 reference plane reference plane
< high-power gaas fet (small signal gain stage) > MGF0918A l & s band / 0.5w smd non - matched publication date : apr., 2011 4 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any ot her rights, belonging to mitsubishi elec tric corporation or a third party. ?mitsubishi electric corporation assumes no res ponsibility for any damage, or infringement of any third-party?s rights, originating in the use of any pr oduct data, diagrams, charts, programs, algorithms, or circuit application examples c ontained in these materials. ?all information contained in thes e materials, including product data, diagrams, charts, programs and algorithms represents information on pr oducts at the time of publication of these materials, and are subject to change by mitsubishi electric cor poration without notice due to product improvements or other reasons. it is therefore recommended that cust omers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distri butor for the latest product info rmation before pu rchasing a product listed herein. the information described here may contain technica l inaccuracies or typographical errors. mitsubishi electric corporation assumes no re sponsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to info rmation published by mitsubishi electr ic corporation by various means, including the mitsubishi semiconductor home page (http://www. m itsubishi e lectric.com/). ?when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, pleas e be sure to evaluate all informati on as a total system before making a final decision on the applic ability of the information and products. mi tsubishi electric corporation assumes no responsibility for any damage, liabilit y or other loss resulting from the information contained herein. ?mitsubishi electric corporation semiconductors are not designed or m anufactured for use in a device or system that is used under circum stances in which human life is pot entially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a pr oduct contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aeros pace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporat ion is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies ar e subject to the japanese export cont rol restrictions, they must be exported under a license from the ja panese government and cannot be im ported into a country other than the approved destination. any diversion or re-export contrary to the export contro l laws and regulations of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporation or an authorized mitsubi shi semiconductor product distributor for further details on these material s or the products contained therein.
|
