Part Number Hot Search : 
494R2 UFT14005 29LV04 SB120 2SC4102 54000 M22100 B105M
Product Description
Full Text Search
 

To Download MGF0916A Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  publication date : apr., 2011 1 < high-power gaas fet (small signal gain stage) > MGF0916A l & s band / 0.2w smd non - matched description the MGF0916A gaas fet with an n-channel schottky gate, is designed for use uhf band amplifiers. features ? high output power po=23dbm(typ.) @f=1.9ghz,pin=5dbm ? high power gain gp=19db(typ.) @f=1.9ghz ? high power added efficiency ? add=30%(typ.) @f=1.9ghz,pin=5dbm ? hermetic package application ? for uhf band power amplifiers quality ? gg recommended bias conditions ? vds=6v ? ids=100ma ? rg=1k ? delivery -01: tape & reel(1k), -03: trai(50pcs) absolute maximum ratings (ta=25 ? c) symbol parameter ratings unit v gso gate to source breakdown voltage -8 v v gdo gate to drain breakdown voltage -8 v i d drain current 250 ma i gr reverse gate current -0.6 ma i gf forward gate current 1.5 ma p t total power dissipation 1.5 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. i dss saturated drain current v ds =3v,v gs =0v 150 200 250 ma v gs(off) gate to source cut-off voltage v ds =3v,i d =0.1ma -1.5 - -4.5 v gm transconductance v ds =3v,i d =100ma - 90 - ms po output power v ds =6v,i d =100ma,f=1.9ghz - 23 - dbm ? add power added efficiency pin=5dbm - 30 - % g lp linear power gain - 19 - db nf noise figure v ds =6v,i d =100ma,f=1.9ghz - 1 - db rth(ch-c) thermal resistance *1 ? vf method - 70 100 ? c/w *1: channel to case / above parameters, ratings, limits are subject to change. fig.1
< high-power gaas fet (small signal gain stage) > MGF0916A l & s band / 0.2w smd non - matched publication date : apr., 2011 2 MGF0916A typical characteristics po,gp,pae vs.pin 6 8 10 12 14 16 18 20 22 24 26 -15 -10 -5 0 5 10 15 pin(dbm) po(dbm) 0 5 10 15 20 25 30 35 40 45 50 gp(db),pae(%) po gp pae im3,po(scl) vs. pi(scl) -40 -30 -20 -10 0 10 20 30 -25 -20 -15 -10 -5 0 5 10 pi(scl) (dbm) po(scl) (dbm) -60 -50 -40 -30 -20 -10 0 10 im3 (dbc) po im3 vd=6v id=100ma f1=1.90ghz f2=1.91ghz vds=6v id=0.1a f=1.9ghz
< high-power gaas fet (small signal gain stage) > MGF0916A l & s band / 0.2w smd non - matched publication date : apr., 2011 3 MGF0916A s parameters (ta=25 ? c,vd=6v,id=100ma, reference plane see fig.1) freq. k mag/msg (mhz) (mag) (ang) (mag ) (ang)(mag)(ang)(mag)(ang) (db ) 600 0.954 -40.32 7.263 145.11 0.016 60.06 0.477 -37.47 0.25 26.57 1000 0.915 -62.48 6.256 126.36 0.023 45.59 0.509 -57.48 0.32 24.35 1400 0.887 -80.56 5.395 110.17 0.027 32.76 0.543 -73.42 0.37 23.01 1800 0.866 -95.15 4.664 96.15 0.029 21.52 0.578 -86.07 0.44 22.06 2200 0.852 -106.84 4.047 83.93 0.030 11.83 0.613 -96.10 0.51 21.30 2600 0.844 -116.18 3.529 73.20 0.030 3.59 0.646 -104.09 0.60 20.71 3000 0.829 -123.68 3.099 63.67 0.030 -3.30 0.679 -110.51 0.72 20.14 3400 0.822 -129.83 2.743 55.09 0.029 -8.97 0.708 -115.77 0.84 19.76 3800 0.813 -135.06 2.452 47.23 0.029 -13.5 7 0.736 -120.19 0.93 19.27 4200 0.806 -139.74 2.215 39.92 0.028 -17.24 0.760 -124.02 1.05 17.60 4600 0.802 -144.18 2.025 32.99 0.028 -20.1 5 0.782 -127.46 1.09 16.73 5000 0.792 -148.63 1.874 26.30 0.028 -22.4 8 0.801 -130.64 1.16 15.86 5400 0.779 -153.25 1.755 19.72 0.029 -24.3 9 0.817 -133.65 1.17 15.29 5800 0.763 -158.12 1.661 13.18 0.030 -26.0 6 0.831 -136.55 1.19 14.78 6200 0.741 -163.24 1.589 6.57 0.031 -27.6 7 0.843 -139.35 1.22 14.24 6600 0.714 -168.50 1.533 -0.16 0.033 -29.3 7 0.853 -142.06 1.23 13.79 7000 0.688 -173.69 1.490 -7.07 0.036 -31.3 3 0.861 -144.65 1.19 13.50 7400 0.660 -178.49 1.457 -14.20 0.038 -33.6 8 0.868 -147.09 1.21 13.08 7800 0.628 176.97 1.430 -21.60 0.041 -36.5 5 0.874 -149.36 1.21 12.67 8200 0.590 172.29 1.409 -29.29 0.044 -40.0 5 0.879 -151.43 1.23 12.17 8600 0.540 167.52 1.391 -37.32 0.047 -44.2 7 0.883 -153.28 1.27 11.56 9000 0.477 162.13 1.374 -45.70 0.050 -49.2 6 0.886 -154.93 1.33 10.94 9400 0.400 155.63 1.358 -54.48 0.054 -55.0 6 0.888 -156.42 1.36 10.41 9800 0.311 146.74 1.342 -63.70 0.057 -61.6 7 0.888 -157.81 1.40 9.95 10200 0.217 133.83 1.325 -73.41 0.061 -69.0 5 0.886 -159.22 1.40 9.62 10600 0.126 110.51 1.306 -83.66 0.065 -77.14 0.880 -160.83 1.39 9.31 11000 0.073 51.9 7 1.286 -94.52 0.070 -85.81 0.871 -162.85 1.36 9.08 11400 0.113 -5.75 1.262 -106.08 0.075 -94.9 2 0.857 -165.57 1.35 8.73 11800 0.188 -27.30 1.236 -118.45 0.081 -104.26 0.836 -169.37 1.36 8.26 12200 0.260 -36.27 1.206 -131.74 0.088 -113.56 0.806 -174.68 1.42 7.52 s11s21s12s22 fig.1 outline drawing 0.80 0.25 (1) gate (2) drain (3) source 4.00 (2) 0.3 gate mark round corner (1) 4.20 (2) back side pattern 2.5 ( unit:mm) 0.6 2.0 0.8 (1) (3) gate mark 2.8 1.20 reference plane reference plane
< high-power gaas fet (small signal gain stage) > MGF0916A l & s band / 0.2w smd non - matched publication date : apr., 2011 4 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any ot her rights, belonging to mitsubishi elec tric corporation or a third party. ?mitsubishi electric corporation assumes no res ponsibility for any damage, or infringement of any third-party?s rights, originating in the use of any pr oduct data, diagrams, charts, programs, algorithms, or circuit application examples c ontained in these materials. ?all information contained in thes e materials, including product data, diagrams, charts, programs and algorithms represents information on pr oducts at the time of publication of these materials, and are subject to change by mitsubishi electric cor poration without notice due to product improvements or other reasons. it is therefore recommended that cust omers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distri butor for the latest product info rmation before pu rchasing a product listed herein. the information described here may contain technica l inaccuracies or typographical errors. mitsubishi electric corporation assumes no re sponsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to info rmation published by mitsubishi electr ic corporation by various means, including the mitsubishi semiconductor home page (http://www. m itsubishi e lectric.com/). ?when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, pleas e be sure to evaluate all informati on as a total system before making a final decision on the applic ability of the information and products. mi tsubishi electric corporation assumes no responsibility for any damage, liabilit y or other loss resulting from the information contained herein. ?mitsubishi electric corporation semiconductors are not designed or m anufactured for use in a device or system that is used under circum stances in which human life is pot entially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a pr oduct contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aeros pace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporat ion is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies ar e subject to the japanese export cont rol restrictions, they must be exported under a license from the ja panese government and cannot be im ported into a country other than the approved destination. any diversion or re-export contrary to the export contro l laws and regulations of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporation or an authorized mitsubi shi semiconductor product distributor for further details on these material s or the products contained therein.


▲Up To Search▲   

 
Price & Availability of MGF0916A

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X