pb rohs ev32c6a5a1-8.192m ev32c6 a 5 a 1 -8.192m series rohs compliant (pb-free) 3.3v 6 pad 5mm x 7mm ceramic smd hcmos vcxo (tri-state pad 2) operating temperature range 0c to +70c absolute pull range 100ppm minimum nominal frequency 8.192mhz duty cycle 50 5(%) typical, 50 10(%) maximum linearity 10% typical, 20% maximum electrical specifications nominal frequency 8.192mhz frequency tolerance/stability 50ppm maximum (inclusive of all conditions: calibration tolerance at 25c, frequency stability over the operating temperature range, supply voltage change, output load change, shock, and vibration.) aging at 40c 2ppm/first year typical, 10ppm/10 years maximum operating temperature range 0c to +70c supply voltage 3.3vdc 10% input current 15ma maximum output voltage logic high (voh) 90% of vdd minimum (ioh = -4ma) output voltage logic low (vol) 10% of vdd minimum (iol = +4ma) rise/fall time 5nsec maximum (measured at 20% to 80% of waveform) duty cycle 50 5(%) typical, 50 10(%) maximum (measured at 50% of waveform) load drive capability 10ttl load or 30pf hcmos load maximum output logic type hcmos absolute pull range 100ppm minimum (inclusive of all conditions: calibration tolerance at 25c, frequency stability over the operating temperature range, supply voltage change, output load change, shock, vibration, and aging over the control voltage (vc).) control voltage 0.3vdc to 3.0vdc (test condition for absolute pull range) control voltage range 0.0vdc to vdd linearity 10% typical, 20% maximum transfer function positive tranfer characteristic modulation bandwidth 10khz minimum (measured at -3db, vc = 1.65vdc) input impedance 50kohms minimum input leakage current 10a maximum phase noise -70dbc/hz at offset of 10hz, -100dbc/hz at offset of 100hz, -130dbc/hz at offset of 1khz, -147dbc/hz at offset of 10khz, -152dbc/hz at offset of 100khz, and -155dbc/hz at offset of 1mhz (typical values at fo = 27mhz) tri-state input voltage (vih and vil) +0.9vdd minimum to enable output; +0.1vdd maximum to disable output (high impedance); no connect to enable output. rms phase jitter 1psec maximum (fj = 12khz to 20mhz) start up time 10msec maximum storage temperature range -55c to +125c environmental & mechanical specifications fine leak test mil-std-883, method 1014 condition a gross leak test mil-std-883, method 1014 condition c mechanical shock mil-std-202, method 213 condition c resistance to soldering heat mil-std-202, method 210 resistance to solvents mil-std-202, method 215 solderability mil-std-883, method 2003 temperature cycling mil-std-883, method 1010 vibration mil-std-883, method 2007 condition a www.ecliptek.com | specification subject to change without notice | rev j 5/19/2008 | page 1 of 6
ev32c6a5a1-8.192m mechanical dimensions (all dimensions in millimeters) pin connection 1 control voltage 2 tri-state 3 case ground 4 output 5 no connect 6 supply voltage line marking 1 ecliptek 2 8.192m 3 xxyzz xx=ecliptek manufacturing code y=last digit of year zz=week of year 0.54 (x4) 1.89 1.8 (x6) 2.0 (x6) www.ecliptek.com | specification subject to change without notice | rev j 5/19/2008 | page 2 of 6 markining orient a tion 1.65 0.20 5.00 0.15 7.00 0.15 5.08 0.15 3.68 0.15 2.54 typ 1.3 0.2 1 2 3 4 5 6 1.4 0.1 all t oler ances are 0.1 sug g ested solder p ad la y out solder land (x6) all dimensions in millimeters output w a veform v oh v ol 80% or 2.4v dc 50% or 1.4v dc 20% or 0.4v dc f all time rise time t w t duty cycle (%) = t w /t x 100 clock output
ev32c6a5a1-8.192m www.ecliptek.com | specification subject to change without notice | rev j 5/19/2008 | page 3 of 6 output supply v oltage (v dd ) ground p o w er supply v oltage meter current meter 0.01 f (note 1) 0.1 f (note 1) c l (note 3) oscilloscope f requency counter probe (note 2) note 1: an e xter nal 0.1 f lo w frequency tantalum b ypass capacitor in par allel with a 0.01 f high frequency cer amic b ypass capacitor close to the pac kage g round and v dd pin is required. note 2: a lo w capacitance (<12pf), 10x atten uation f actor , high impedance (>10mohms), and high bandwidth (>300mhz) passiv e probe is recommended. note 3: capacitance v alue c l includes sum of all probe and fixture capacitance . p o w er supply v oltage meter v oltage control p o w er supply switch no connect t r i-state t est cir cuit f or cmos output
ev32c6a5a1-8.192m www.ecliptek.com | specification subject to change without notice | rev j 5/19/2008 | page 4 of 6 t est cir cuit f or ttl output supply v oltage (v dd ) ground p o w er supply v oltage meter current meter 0.01 f (note 1) 0.1 f (note 1) c l (note 3) r l (note 4) p o w er supply oscilloscope f requency counter probe (note 2) note 1: an e xter nal 0.1 f lo w frequency tantalum b ypass capacitor in par allel with a 0.01 f high frequency cer amic b ypass capacitor close to the pac kage g round and v dd pin is required. note 2: a lo w capacitance (<12pf), 10x atten uation f actor , high impedance (>10mohms), and high bandwidth (>300mhz) passiv e probe is recommended. note 3: capacitance v alue c l includes sum of all probe and fixture capacitance . note 4: resistance v alue r l is sho wn in t ab le 1. see applicab le specification sheet f or 'load dr iv e capability'. note 5: all diodes are mmbd7000, mmbd914, or equiv alent. p o w er supply v oltage meter note 5 v oltage control t ab le 1: r l resistance v alue and c l capacitance v alue vs . output load dr iv e capability output load drive capability r l v alue (ohms) c l v alue (pf) 10ttl 5ttl 2ttl 10lsttl 1ttl 390 780 1100 2000 2200 15 15 6 15 3 p o w er supply no connect t r i-state output
t min s t max s critical zone t to t l p ramp-up ramp-down t l t p t 25 c to peak t preheat s t l t p temperature (t) time (t) recommended solder reflow methods ev32c6a5a1-8.192m high temperature infrared/convection ts max to tl (ramp-up rate) 3c/second maximum preheat - temperature minimum (ts min) 150c - temperature typical (ts typ) 175c - temperature maximum (ts max) 200c - time (ts min) 60 - 180 seconds ramp-up rate (tl to tp) 3c/second maximum time maintained above: - temperature (tl) 217c - time (tl) 60 - 150 seconds peak temperature (tp) 260c maximum for 10 seconds maximum target peak temperature (tp target) 250c +0/-5c time within 5c of actual peak (tp) 20 - 40 seconds ramp-down rate 6c/second maximum time 25c to peak temperature (t) 8 minutes maximum moisture sensitivity level level 1 www.ecliptek.com | specification subject to change without notice | rev j 5/19/2008 | page 5 of 6
t min s t max s critical zone t to t l p ramp-up ramp-down t l t p t 25 c to peak t preheat s t l t p temperature (t) time (t) recommended solder reflow methods ev32c6a5a1-8.192m low temperature infrared/convection 240c ts max to tl (ramp-up rate) 5c/second maximum preheat - temperature minimum (ts min) n/a - temperature typical (ts typ) 150c - temperature maximum (ts max) n/a - time (ts min) 60 - 120 seconds ramp-up rate (tl to tp) 5c/second maximum time maintained above: - temperature (tl) 150c - time (tl) 200 seconds maximum peak temperature (tp) 240c maximum target peak temperature (tp target) 240c maximum 1 time / 230c maximum 2 times time within 5c of actual peak (tp) 10 seconds maximum 2 times / 80 seconds maximum 1 time ramp-down rate 5c/second maximum time 25c to peak temperature (t) n/a moisture sensitivity level level 1 low temperature manual soldering 185c maximum for 10 seconds maximum, 2 times maximum. high temperature manual soldering 260c maximum for 5 seconds maximum, 2 times maximum. www.ecliptek.com | specification subject to change without notice | rev j 5/19/2008 | page 6 of 6
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