2005. 4. 21 1/3 semiconductor technical data KTA2013F epitaxial planar pnp transistor revision no : 1 general purpose application. switching application. features h excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). h high h fe : h fe =120~400. h complementary to ktc4074f. h thin fine pitch small package. maximum rating (ta=25 ? ) dim millimeters a e a g k d j c b b d e tfsm 0.6 0.05 0.8 0.05 0.38+0.02/-0.04 0.2 0.05 1.0 0.05 0.35 0.05 0.1 0.05 c g j k 0.15 0.05 + _ + _ + _ + _ + _ + _ + _ 2 1 3 1. emitter 2. base 3. collector electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo -20 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector current i c -150 ma base current i b -30 ma collector power dissipation p c 50 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-20v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (note) v ce =-5v, i c =-2ma 120 - 400 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - -0.1 -0.3 v transition frequency f t v ce =-10v, i c =-1ma 80 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4 7 pf note : h fe classification y(4):120 q 240, gr(6):200 q 400 fffffff f 6
2005. 4. 21 2/3 KTA2013F revision no : 1 c collector current i (ma) 0 -40 30 dc current gain h fe 3k -3 -1 -0.3 -0.1 collector current i (ma) c c 0 collector-emitter voltage v (v) ce ce c i - v h - i v - i c collector current i (ma) -0.1 -0.1 base-emitter saturation base current i ( a) b -0.3 0 base-emitter voltage v (v) be i - v f - i c collector current i (ma) -0.1 3k t transition frequency f (mhz) 10 collector-emitter saturation -0.01 -0.1 collector current i (ma) c v - i -1 -2 -3 -4 -5 -6 -7 -80 -120 -160 -200 -240 i =-0.2ma b b i =-0.5ma b i =-1.0ma b i =-1.5ma b i =-2.0ma b i =0ma common emitter ta=25 c fe c -10 -30 -100 -300 50 100 300 500 1k ta=100 c ta=100 c ta=25 c ta=-25 c ta=-25 c v =-5v v =-5v ce ce v =-1v v =-1v common emitter ce(sat) c voltage v (v) ce(sat) -0.3 -1 -3 -10 -30 -100 -300 -0.03 -0.05 -0.1 -0.3 -0.5 -1 ta=100 c ta=25 c ta=-25 c common emitter i /i =10 c b c be(sat) voltage v (v) be(sat) -0.3 -1 -10 -30 -100 -300 -3 -0.3 -0.5 -1 -3 -5 -10 common emitter i /i =10 ta=25 c c b t c -0.3 -1 -3 -10 -30 -100 -300 30 50 100 300 500 1k common emitter v =-10v ta=25 c ce bbe -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -3 -10 -30 -100 -300 -1k common emitter v =-5v ce ta=100 c ta=25 c ta=-25 c
2005. 4. 21 3/3 KTA2013F revision no : 1 collector power dissipation p (mw) 0 c 0 ambient temperature ta ( c) pc - ta 25 50 75 100 125 25 50 75 100 150
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