features +30 dbm saturated output power 18 db typical gain 30% power added ef?iency on-chip bias network dc decoupled rf input and output high performance ceramic bolt down package description m/a-com? MAAM26100-P1 is a gaas mmic two stage high ef?iency power ampli er in a high performance bolt down ceramic package. the MAAM26100-P1 is a fully monolithic design for operation in 50-ohm systems, with an on-chip negative bias network which eliminates the need for external bias circuitry. the MAAM26100-P1 is ideally suited for driver ampli?rs and transmitter outputs in electronic warfare jammers, missile subsystems and phased array radars. m/a-com? MAAM26100-P1 is fabricated using a mature 0.5-micron gate length gaas process. the process features full passivation for increased performance reliability. gaas mmic power ampli?r 2 - 6 ghz MAAM26100-P1 preliminary speci?ations v1.a m/a-com, inc. north america: tel. (800) 366-2266 n asia/paci?: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020 1 the preliminary speci?ations data sheet contains typical electrical speci?ations which may change prior to final introduction. l l l l l l cr-15 parameter test conditions units min. typ. max. small signal gain p in -10 dbm 2 - 6 ghz db 18 input vswr p in -10 dbm 2 - 6 ghz 2.0:1 output vswr p in -10 dbm 2 - 6 ghz 2.2:1 output power p in = +15 dbm 2 - 6 ghz dbm +30 power added ef?iency p in = +15 dbm 2 - 6 ghz % 30 output ip 3 2, 5 & 6 ghz dbm 40 typical electrical speci?ations, t a = +25? , v dd = +8 v, v gg = -5 v ceramic base plate 4x .06 x 45 chamfer .010 sq. orientation tab .70 .085 .100 4x .33 .318 .010 .090 max .040 .005 .002 .020 .010 .003 10x .050 4x .115 .010 .328 .010 10x .050 min -c- -a- -b- 6 5 4 3 2 1 7 8 9 10 .530 .159 2x .096 thru m .004 a bc notes: (unless otherwise speci?d) 1. dimensions are inches. 2. tolerance: in .xxx = ?010 part number package MAAM26100-P1 ceramic bolt down ordering information
gaas mmic power ampli?r maam 26100-p1 v1.a m/a-com, inc. north america: tel. (800) 366-2266 n asia/paci?: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020 2 the preliminary speci?ations data sheet contains typical electrical speci?ations which may change prior to final introduction. parameter absolute maximum v dd 10 volts v gg -10 volts power dissipation 8.4 w rf input power +23 dbm channel temperature 150? storage temperature -65? to +150? thermal resistance 15?/w (channel to case) absolute maximum ratings 1, 2 typical performance @+25? functional diagram 3,4 1. exceeding these limits may cause permanent damage. 2. case temperature (tc) = +25? in MAAM26100-P1 v dd v gg out 6 8 3 10 0.01uf gnd 1,2,4,5,7,9 22 20 18 16 14 12 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 frequency (ghz) s 21 (db) 35 30 25 20 15 10 2.0 3.0 4.0 5.0 6.0 p out (dbm) frequency (ghz) 2.0 1.8 1.6 1.4 1.2 1.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 frequency (ghz) vswr gain vs frequency output power vs frequency @ p in = +15 dbm 35 30 25 20 15 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 frequency (ghz) pae (%) power added efficiency vs frequency @ p in = +15 dbm vswr vs frequency linear at p in = +15dbm s 22 s 11 3. nominal bias is obtained by ?st connecting -5 volts to pin 6 (vgg),followed by connecting +9 volts to pin 10 (vdd). note sequence. 4. rf ground and thermal interface is the ?nge (case bottom). adequate heat sinking is required.
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