1 rf power mosfet transistor 80w, 2-175mhz, 28v m/a-com products released; rohs compliant DU2880V ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. package outline features ? n-channel enhancement mode device ? dmos structure ? lower capacitances for broadband operation ? high saturated output power ? lower noise figure than competitive devices absolute maximum ratings at 25 c parameter rating drain-source voltage 65 gate-source voltage 20 drain-source current 8* power dissipation 206 junction temperature 200 storage temperature -55 to +150 thermal resistance 0.85 symbol v ds v gs i ds p d t j t stg jc units v v a w c c c/w electrical characteristics at 25c parameter symbol min max units test conditions drain-source breakdown voltage bv dss 65 - v v gs = 0.0 v , i ds = 10.0 ma drain-source leakage current i dss - 2.0 ma v gs = 28.0 v , v gs = 0.0 v gate-source leakage current i gss - 2.0 a v gs = 20.0 v , v ds = 0.0 v gate threshold voltage v gs(th) 2.0 6.0 v v ds = 10.0 v , i ds = 200.0 ma forward transconductance g m 1.0 - s v ds = 10.0 v , i ds = 2000.00 ma , v gs = 1.0v, 80 s pulse input capacitance c iss - 90 pf v ds = 28.0 v , f = 1.0 mhz output capacitance c oss - 80 pf v ds = 28.0 v , f = 1.0 mhz reverse capacitance c rss - 16 pf v ds = 28.0 v , f = 1.0 mhz power gain g p 13 - db v dd = 28.0 v, i dq = 400 ma, p out = 80.0 w f =175 mhz drain efficiency ? d 60 - % v dd = 28.0 v, i dq = 400 ma, p out = 80.0 w f =175 mhz load mismatch tolerance vswr-t - 30:1 - v dd = 28.0 v, i dq = 400 ma, p out = 80.0 w f =175 mhz *per side f (mhz) z in ( ? ) z load ( ? ) 30 4.5 - j14.5 13.5 +j4.5 100 3.0 - j10.5 13.5 + j6.0 175 2.0 - j7.5 12.0 + j4.5 v dd = 28v, i dq = 400ma, p out = 80 w typical device impedance z in is the series equivalent in put impedance of the device from gate to source. z load is the optimum series equivalent load impedance as measured from drain to ground.
2 rf power mosfet transistor 80w, 2-175mhz, 28v m/a-com products released; rohs compliant DU2880V ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. frequency (mhz) typical broadband performance curves gain (db) gain vs frequency v dd =28 v i dq =400 ma p out =80 w frequency (mhz) efficiency vs frequency v dd =28 v i dq =400 ma p out =80 w power output vs power input v dd =28 v i dq =400 ma 30 20 10 efficiency (%) 70 60 50 100 power output (w) 0.2 0.6 power input (w) 100mhz 30mhz 25 100 175 120 100 80 60 40 20 0 50 125 0.4 2.5 2 1 50 25 0 3 175mhz 150 power output vs supply voltage f=175mhz i dq =400 ma p in =1.5 w power output (w) 20 30 supply voltage (v) 90 75 60 45 30 15 0 25 16 3.5 1.5
3 rf power mosfet transistor 80w, 2-175mhz, 28v m/a-com products released; rohs compliant DU2880V ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. test fixture assembly
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