CHM6601JPT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t p-channel enhancement mode field effect transistor voltage 60 volts current 4.3 ampere a p p l i c a t i o n f e a t u r e * super high dense cell design for extremely low r ds(on) . construction * p-channel enhancement * s e r v o m o t o r c o n t r o l . * p o w e r m o s f e t g a t e d r i v e r s . * o t h e r s w i t c h i n g a p p l i c a t i o n s . 2006-02 * high power and current handing capability. * lead free product is acquired. c i r c u i t a b s o l u t e m a x i m u m r a t i n g s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l parameter CHM6601JPT units v dss drain-source voltage -60 v v gss gate-source voltage 20 v i d maximum drain current - continuous a - pulsed p d maximum power dissipation 2500 mw t stg storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient 50 -4.3 c/w (note 3) note : 1. surface mounted on fr4 board , t <=10sec 2. pulse test , pulse width <= 300us , duty cycle <= 2% -17 d i m e n s i o n s i n m i l l i m e t e r s so-8 * small flat package. (so-8 ) t j operating temperature range -55 to 150 c 3. repetitive rating , pulse width linited by maximum junction temperature (note 1) 4. guaranteed by design , not subject to production trsting so-8 1 4 8 5 1.27 ( 0.05 )bsc .51 ( 0.02 0 ) .10 (0.012) .25 ( 0.010 ) .17 (0.007) 4.06 ( 0.160 ) 3.70 ( 0.146 ) 5.00 ( 0.197 ) 4.69 ( 0.185 ) 1.75 (0.069) 1.35 ( 0.053 ) 6.20 ( 0.244 ) 5.80 ( 0.228 ) .25 ( 0.010 ) .05 (0.002) 1 4 5 8 s s s g d d d d
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM6601JPT ) e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x u n i t s o f f c h a r a c t e r i s t i c s 86 o n c h a r a c t e r i s t i c s g fs forward transconductance v ds = -5v , i d = -4.3a r ds(on) static drain-source on-resistance m w vgs=-10v, id=-4.3a -1 b v d s s drain-source breakdown voltage v gs = 0 v, i d = -250 a n a -60 v n a i dss zero gate voltage drain current v ds gate-body leakage = gate-body leakage -60 v, v v gs gs = 20v, = 0 v v ds = 0 v a +100 -100 v gs = -20v, v ds = 0 v v gs (th) gate threshold voltage v ds = v gs , i d = -250 a -3 v vgs=-4.5v, id=-3.4a (note 2) 8 s 125 70 95 gssf i i gssr s i switching characteristics q gs gate-source charge q gd gate-drain charge t on turn-on time ns v dd = -30v i d = -1a , v g s = -10 v 26 t r rise time 12 134 t f fall time 36 q g total gate charge 3.7 vds=-30v, id=-3.5a vgs=-10v turn-off time t off rgen= 6 w (note 4) nc 13 6 67 18 drain-source diode characteristics and maximum ratings 18.8 v sd drain-source diode forward current drain-source diode forward voltage i s = -4.3a , v g s = 0 v -4.3 -1.2 a v (note 1) (note 2) 2.9 25 dynamic characteristics input capacitance reverse transfer capacitance output capacitance c iss c oss c rss v ds = -30v, v gs = 0v, f = 1.0 mhz 1110 110 65 pf -1
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