EMF5 general purpose transistors (dual transistors) features z 2sa2018 and dtc144e are housed independently in a package. z mounting possible with sot-56 3 automatic mounting machines. z transistor elements are independ ent, eliminating interference. z mounting cost and area be cut in half. marking: f5 equivalent circuit tr1 absolute maximum ratings (ta=25 ) symbol parameter value units v cbo collector-base voltage -15 v v ceo collector-emitter voltage -12 v v ebo emitter-base voltage -6 v i c collector current -500 ma p c collector power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =-10 a, i e =0 -15 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -12 v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -6 v collector cut-off current i cbo v cb =-15v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-6v, i c =0 -0.1 a dc current gain h fe v ce =-2v, i c =-10ma 270 680 collector-emitter saturation voltage v ce(sat) i c =-200ma, i b =-10ma -0.25 v transition frequency f t v ce =-2v, i e =-10ma, f=100mhz 260 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz 6.5 pf sot-563 1 r 1 r 2 dtr2 tr1 (1) (2) (3) (4) (5) (6) www.htsemi.com semiconductor jinyu 1 date:2011/ 05
tr2 absolute maximum ratings(ta=25 ) parameter symbol limits unit supply voltage v cc 50 v input voltage v in -10~+40 v i o 30 output current i c(max) 100 ma power dissipation pd 150 mw junction temperature tj 150 storage temperature tstg -55~150 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions v i(off) 0.5 v cc =5v, i o =100 a input voltage v i(on) 3.0 v v o =0.3v, i o =2ma output voltage v o(on) 0.1 0.3 v i o /i i =10ma/0.5ma input current i i 0.18 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 68 v o =5v, i o =5ma input resistance r 1 32.9 47 61.1 k ? - resistance ratio r 2 /r 1 0.8 1 1.2 - transition frequency f t 250 mhz v ce =10v, i e =-5ma, f=100mhz EMF5 www.htsemi.com semiconductor jinyu 2 date:2011/ 05
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