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BUV27A 02012 27C51 MR2000 GC15011 10N60B SPB80 FODM121
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  1. t olerance of inductance 10~330uh 10% 2. i : rated current. l<10%, t<45 at i o c 3. operating temperature: -20 to 105 (including self-temperature rise) oo cc rated rated s m t p o w e r i n d u c t o r si84 t ype features mechanical dimension: 8.0 b c 8.0 1.4 d a low profile (4.0mm max. height) smd type. unshielded.self-leads, suitable for high density high energy storage and low dcr. provided with embossed carrier tape packing. ideal for power source circuits, dc-dc converter, dc-ac inverters inductor application. in addition to the standard versions shown here, customized inductors are available to meet your exact requirements. mounting. delt a electronics, inc. (taoyuan plant cpbg) electrical characteristics: 0 . 0 0 0 . 0 1 0 . 1 0 1 . 0 0 1 0 . 0 0 c u r r e n t ( a ) 1 . 0 0 1 0 . 0 0 1 0 0 . 0 0 1 0 0 0 . 0 0 i n d u c t a n c e ( u h ) 1 0 0 1 2 0 1 5 0 1 8 0 2 2 0 2 7 0 3 3 0 3 9 0 4 7 0 5 6 0 6 8 0 8 2 0 1 0 1 1 2 1 1 5 1 1 8 1 2 7 1 3 3 1 2 2 1 252, san ying road, kueisan industrial zone, taoyuan shien, 333, taiwan, r .o.c. tel: 886-3-3591968; fax: 886-3-3591991http://www.deltaww .com unit:mm/inch a = 7.8 0.2/0.307 0.008 b = 7.0 0.2/0.276 0.008 c = 3.5 0.5/0.138 0.020 d = 1.5 0.2/0.059 0.008 at 25 : 1khz, 1v o c 2 1 recommended pad l dcr i part no. (uh) ( ) max (adc) rated si84 - 100 10 0.080 1.44 si84 - 120 12 0.089 1.39 si84 - 150 15 0.104 1.24 si84 - 180 18 0.111 1.12 si84 - 220 22 0.129 1.07 si84 - 270 27 0.153 0.94 si84 - 330 33 0.170 0.85 si84 - 390 39 0.217 0.74 si84 - 470 47 0.252 0.68 si84 - 560 56 0.282 0.64 si84 - 680 68 0.332 0.59 si84 - 820 82 0.406 0.54 si84 - 101 100 0.481 0.51 si84 - 121 120 0.536 0.49 si84 - 151 150 0.755 0.40 si84 - 181 180 1.022 0.36 si84 - 221 220 1.200 0.31 si84 - 271 270 1.306 0.29 si84 - 331 330 1.495 0.28


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