shantou huashan electronic devices co.,ltd . applications power amplifier applications, power switching applications. absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv cbo collector-base breakdown voltage 50 v i c =100 a, i e =0 bv ceo collector-emitter breakdown voltage 50 v i c =10ma, i b =0 bv ebo emitter-base breakdown voltage 5 v i e =100 a i c =0 i cbo collector cut-off current 1.0 a v cb =50v, i e =0 i ebo emitter cut-off current 1.0 a v eb =5v, i c =0 h fe(1) dc current gain 70 240 v ce =2v, i c =0.5a h fe(2) 40 v ce =2v, i c =1.5a v ce(sat) collector- emitter saturation voltage 0.5 v i c =1a, i b =50ma v be(sat) base-emitter saturation voltage 1.2 v i c =1a, i b =50ma f t current gain-bandwidth product 100 mhz v ce =2v, i c =0.5a cob output capacitance 30 pf v cb =10v, i e =0 f=1 mhz t on turn-on time 0.1 s t stg storage time 1.0 s t f fall time 0.1 s see specified test circuit h fe classification o y 70140 120240 t stg storage temperature -55~150 t j junction temperature 150 p c collector dissipation 750mw v cbo collector-base voltage 50v v ceo collector-emitter voltage 50v v ebo emitter-base voltage 5v i c collector current 2a ib base current -0.5a 1 D emitter e 2 D collector c 3 D base b to-92 H2655S np n s i l i c o n t r a n s i s t o r
shantou huashan electronic devices co.,ltd . H2655S np n s i l i c o n t r a n s i s t o r
shantou huashan electronic devices co.,ltd . H2655S np n s i l i c o n t r a n s i s t o r
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