vishay siliconix sud42n03-3m9p document number: 66824 s10-2006-rev. a, 06-sep-10 www.vishay.com 1 n-channel 30 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? dc/dc converters - synchronous buck low side product summary v ds (v) r ds(on) ( ? )i d (a) q g (typ.) 30 0.0039 at v gs = 10 v 107 d 67 0.0045 at v gs = 4.5 v 103 d to-252 s gd top view drain connected to tab ordering information: SUD42N03-3M9P-GE3 (lead (pb)-free and halogen-free) n-channel mosfet g d s notes: a. duty cycle ? 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. calculated continuous current based on maximum allowable junction temperature. package limitation current is 42 a. absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current t c = 25 c (silicon limited) i d 107 d a t c = 70 c (silicon limited) 85 d t c = 25 c (package limited) 42 pulsed drain current (t = 300 s) i dm 120 avalanche current i as 45 single avalanche energy a l = 0.1 mh e as 101 mj maximum power dissipation a t c = 25 c p d 73.5 b w t a = 25 c c 2.5 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 50 c/w junction-to-case (drain) r thjc 1.7
www.vishay.com 2 document number: 66824 s10-2006-rev. a, 06-sep-10 vishay siliconix sud42n03-3m9p notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 2.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 125 c 50 v ds = 30 v, v gs = 0 v, t j = 150 c 250 on-state drain current a i d(on) v ds ?? 10 v, v gs = 10 v 50 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 22 a 0.0032 0.0039 ? v gs = 4.5 v, i d = 20 a 0.0037 0.0045 forward transconductance a g fs v ds = 15 v, i d = 20 a 110 s dynamic b input capacitance c iss v gs = 0 v, v ds = 15 v, f = 1 mhz 3535 pf output capacitance c oss 680 reverse transfer capacitance c rss 400 total gate charge c q g v ds = 15 v, v gs = 10 v, i d = 20 a 67 100 nc gate-source charge c q gs 10.5 gate-drain charge c q gd 12.2 gate resistance r g f = 1 mhz 0.3 1.4 2.8 ? tu r n - o n d e l ay t i m e c t d(on) v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 10 v, r g = 1 ? 11 20 ns rise time c t r 10 20 turn-off delay time c t d(off) 35 53 fall time c t f 10 20 drain-source body diode ratings and characteristics b t c = 25 c continuous current i s 42 a pulsed current i sm 120 forward voltage a v sd i f = 10 a, v gs = 0 v 0.83 1.5 v reverse recovery time t rr i f = 10 a, di/dt = 100 a/s 41 62 ns peak reverse recovery current i rm(rec) 23a reverse recovery charge q rr 40 60 nc
vishay siliconix sud42n03-3m9p document number: 66824 s10-2006-rev. a, 06-sep-10 www.vishay.com 3 typical characteristics (25 c, unless otherwise noted) output characteristics transfer characteristics transconductance 0 20 40 60 8 0 100 120 0 0.5 1.0 1.5 2.0 v gs =10 v thr u 4 v v gs =3 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 1 2 3 4 5 00.61.21. 8 2.4 3.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 60 120 1 8 0 240 300 0 1224364 8 60 t c = 125 c t c = - 55 c t c = 25 c i d - drain c u rrent (a) - transcond u ctance (s) g fs on-resistance vs. drain current on-resistance vs. gate-to-source voltage gate charge 0.0025 0.0030 0.0035 0.0040 0.0045 0 204060 8 0 100 v gs =4.5 v v gs =10 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 0.003 0.006 0.009 0.012 0.015 0246 8 10 t j =25 c t j = 150 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 2 4 6 8 10 0204060 8 0 v ds =24 v v ds =15 v i d =20a v ds = 8v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs
www.vishay.com 4 document number: 66824 s10-2006-rev. a, 06-sep-10 vishay siliconix sud42n03-3m9p typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage capacitance on-resistance vs. junction temperature 0.1 1 10 100 0.00.20.40.60. 8 1.0 1.2 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 c iss c oss c rss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0.9 1.2 1.5 1. 8 - 50 - 25 0 25 50 75 100 125 150 i d =20a v gs =4.5 v v gs =10 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) threshold voltage drain source breakdown vs. junction temperature current derating 0.6 0.9 1.2 1.5 1. 8 2.1 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) 33 35 37 39 41 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ds - drain-to-so u rce v oltage ( v ) t j -j u nction temperat u re (c) 0 40 8 0 120 160 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a)
vishay siliconix sud42n03-3m9p document number: 66824 s10-2006-rev. a, 06-sep-10 www.vishay.com 5 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66824 . single pulse avalanche current capability vs. time time (s) (a) i d_a v 100 10 1 10 -3 10 -2 10 -1 10 -4 10 -5 t j = 25 c t j = 150 c safe operating area 0.01 0.1 1 10 100 1000 0.1 1 10 100 t c = 25 c single p u lse b v dss limited limited b yr ds(on) * 100 ms, 1 s, 10 s, dc 1ms 10 ms 100 s v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d normalized thermal transient impedance, junction-to-case 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 110 0.2 0.1 duty cycle = 0.5 100 square wave pulse duration (s) normalized effective transient thermal impedance single pulse 0.05 0.02
document number: 71197 www.vishay.com 18-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package information vishay siliconix to-252aa case outline note ? dimension l3 is for reference only. l2 d l1 l3 b b1 e1 e1 d1 a1 c a2 gage plane height (0.5 mm) e b2 e c1 a l h millimeters inches dim. min. max. min. max. a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 a2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.10 4.45 0.161 0.175 e 6.48 6.73 0.255 0.265 e1 4.49 5.50 0.177 0.217 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.65 10.41 0.380 0.410 l 1.40 1.78 0.055 0.070 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.040 0.060 ecn: t11-0110-rev. l, 18-apr-11 dwg: 5347
application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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