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| inchange semiconductor isc product specification isc silicon pnp darlingtion power transistor PMD13K80 description high dc current gain collector-emitter breakdown voltage- v (br)ceo = -80v(min) complement to type pmd12k80 applications designed for general purpose amplifier and dc motor control applications. absolute maximum ratings(t c =25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5.0 v i c collector current -continuous -8 a i cp collector current-peak -16 a i b b base current -0.12 a p c collector power dissipation@t c =50 100 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermalresistance, junction to case 1.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlingtion power transistor PMD13K80 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = -100ma; i b = 0 -80 v v cer(sus) collector-emitter sustaining voltage i c = -100ma; r be = 2.2k -80 v v ce (sat) collector-emitter saturation voltage i c = -4a; i b = -16ma b -2.0 v v be (sat) base-emitter saturation voltage i c = -4a; i b = -16ma b -2.8 v v be (on) base-emitter on voltage i c = -4a; v ce = -3v -2.8 v i cer collector cutoff current v ce = -54v; r be = 2.2k -5.0 ma i ebo emitter cut-off current v eb = -5v; i c = 0 -3.0 ma h fe dc current gain i c = -4a; v ce = -3v 800 20000 c ob output capacitance i e = 0; v cb = -10v; f test = 1.0mhz 200 pf isc website www.iscsemi.cn 2 |
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