1/4 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.09 - rev.a power management (dual transistors) emf32 / umf32n dta143t and 2sk3019 are housed independently in a emt6 package. ? application ? dimensions (unit : mm) power management circuit ? features 1) power switching circuit in a single package. 2) mounting cost and area can be cut in half. ? structure silicon epitaxial planar transistor ? inner circuits tr2 tr1 (1) (2) (3) (4) (5) (6) ? packaging specifications emf32 emt6 f32 t2r 8000 umf32 n umt6 f32 tr 3000 type package marking code basic ordering unit (pieces) 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 rohm : emt6 abbreviated symbol : f32 each lead has same dimensions abbreviated symbol : f32 each lead has same dimensions rohm : umt6 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) 1pin mark
2/4 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.09 - rev.a data sheet emf32 / umf32n ? absolute maximum ratings (ta=25 ? c) tr1 parameter symbol v cbo v ceo v ebo i c p c tj tstg limits ? 50 ? 50 ? 5 ? 100 150(total) 150 ? 55 to + 150 ? 1 unit v v v ma mw c c collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature ? 1 120mw per element must not be exceeded. each terminal mounted on a recommended lan d. tr2 parameter ? 1 pw 10ms duty cycle 50% ? 2 120mw per element must not be exceeded. each terminal mounted on a recommended lan d. symbol v dss v gss i d i drp p d tch tstg limits 30 20 100 200 150(total) 150 ? 55 to + 150 ? 1 ? 1 ? 2 unit v v ma i dp 200 ma ma i dr 100 ma mw c c drain-source voltage gate-source voltage drain current reverse drain current total power dissipation channel temperature range of storage temperature continuous continuous pulsed pulsed ? electrical characteristics (ta=25 ? c) tr1 parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) r 1 f t min. ? 50 ? 50 ? 5 ? ? 100 ? 3.29 ? ? ? ? ? ? 250 ? 4.7 250 ? ? ? ? 0.5 ? 0.5 600 ? 0.3 6.11 ? ? vi c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 50v v eb = ? 4v i c = ? 1ma, v ce = ? 5v i c /i b = ? 5ma/ ? 0.25ma v ce = ? 10v, i e = 5ma, f = 100mhz ? v v a a ? v k mhz typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage input resistance transition frequency ? transition frequency of the device tr2 parameter symbol min. typ. max. unit conditions input capacitance c iss ? 13 ? pf v ds = 5v, v gs = 0v, f = 1mhz i gss ?? 1 a v gs = 20v, v ds = 0v gate-source leakage v (br)dss 30 ?? v i d = 10 a, v gs = 0v i dss ?? 1.0 a v ds = 30v, v gs = 0v zero gate voltage drain current drain-source breakdown voltage v gs(th) 0.8 ? 1.5 vv ds = 3v, i d = 100 a gate-threshold voltage r ds(on) ? 58 i d = 10ma, v gs = 4v ? 713 i d = 1ma, v gs = 2.5v static drain-source on-state resistance c oss ? 9 ? pf output capacitance |y fs | 20 ?? ms v ds = 3v, i d = 10ma forward transfer admittance c rss ? 4 ? pf reverce transfer capacitance rise time t r ? 35 ? ns t d(off) ? 80 ? ns turn-off delay time t d(on) ? 15 ? ns i d = 10ma, v dd 5v, v gs = 5v, r l = 500 , r gs = 10 turn-on delay time t f ? 80 ? ns fall time
3/4 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.09 - rev.a data sheet emf32 / umf32n ? electrical characteristic curves tr1 v ce =? 5v ? 100 ? 1m ? 10m ? 200 ? 2m ? 20m ? 500 ? 5m ? 50m ? 100 m 1k 500 200 100 50 20 10 5 2 1 dc current gain : h fe collector current : i c (a) ? 40 c 25 c ta = 100 c fig.1 dc current gain vs. collector current l c /l b = 20 ? 500m ? 200m ? 100m ? 50m ? 20m ? 10m ? 5m ? 2m ? 1m ? 1 ? 100 ? 1m ? 10m ? 200 ? 2m ? 20m ? 500 ? 5m ? 50m ? 100 m collector saturation voltage : v ce(sat) (v) collector current : i c (a) ta = 100 c 25 c ? 40 c fig.2 collector-emitter saturation voltage vs. collector current tr2 01 2 34 5 0 0.05 0.1 0.15 drain current : i d (a) drain-source voltage : v ds (v) 3v 3.5v 2.5v v gs = 1.5v 4v 2v ta = 25 c pulsed fig.3 typical output characteristic s 0 4 0.1m 100m drain current : i d (a) gate-source voltage : v gs (v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m ta = 125 c 75 c 25 c ? 25 c v ds = 3v pulsed fig.4 typical transfer characteristic s ? 50 0 0 1 1.5 2 gate threshold voltage : v gs(th) (v ) channel temperature : tch ( c) 0.5 ? 25 25 50 75 100 125 15 0 fig.5 gate threshold voltage vs. channel temperature v ds = 3v i d = 0.1ma pulsed 0.001 1 2 50 static drain-source on-state resistance : r ds(on) ( ) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0. 5 5 10 20 fig.6 static drain-source on-state resistance vs. drain current ( ) ta = 125 c 75 c 25 c ? 25 c v gs = 4v pulsed 0.001 1 2 50 static drain-source on-state resistance : r ds(on) ( ) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 fig.7 static drain-source on-state resistance vs. drain current ( ? ) ta = 125 c 75 c 25 c ? 25 c v gs = 2.5v pulsed 0 5 10 15 2 0 0 5 10 15 gate-source voltage : v gs (v) i d = 0.1a static drain-source on-state resistance : r ds(on) ( ) fig.8 static drain-source on-stat e resistance vs. gate-source voltage ta = 25 c pulsed i d = 0.05a
4/4 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.09 - rev.a data sheet emf32 / umf32n ? 50 0 25 150 0 3 6 9 channel temperature : tch ( c) static drain-source on-state resistance : r ds(on) ( ) ? 25 50 75 100 125 2 1 4 5 7 8 f ig.9 static drain-source on-state resistance vs. channel temperature v gs = 4v pulsed i d = 100ma i d = 50ma 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : |yfs| (s) drain current : i d (a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0.5 0.002 ta =? 25 c 25 c 75 c 125 c v ds = 3v pulsed fig.10 forward transfer admittance vs . drain current 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1 .5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m fig.11 reverse drain current vs . source-drain voltage ( ) v gs = 0v pulsed ta = 125 c 75 c 25 c ? 25 c 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1 .5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m fig.12 reverse drain current vs. source-drain voltage ( ? ) ta = 25 c pulsed v gs = 4v 0v 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds (v) 0.5 0.2 0.5 1 2 5 10 20 5 0 5 10 20 fig.13 typical capacitance vs. drain-source voltage c iss c oss c rss ta = 25 c f = 1mh z v gs = 0v 0.1 10 20 500 swithing time : t (ns) drain current : i d (ma) 5 0.2 0.5 1 2 5 10 20 50 50 100 200 1000 2 10 0 ta = 25 c v dd = 5v v gs = 5v r g = 10 pulsed t d(off) t r t d(on) t f fig.14 switching characteristics
r1010 a www.rohm.com ? 2010 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redunda ncy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospac e machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
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