BUY82X semelab plc reserves the right to change test condi tions, parameter limits and package dimensions with out notice. information furnished by semelab is bel ieved to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility fo r any errors or omissions discovered in its use. se melab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 7363, issue 2 mechanical data dimensions in mm (inches) absolute maximum ratings t case = 25c unless otherwise stated v cbo collector - base voltage 150v v ceo collector - emitter voltage (i b = 0) 60v v ebo emitter ? base voltage (i c = 0) 7v i c continuous collector current 10a i b base current 2a p tot total power dissipation at t case = 25c 30w t case = 100c 15w t amb = 25c 1w t j junction temperature 175c t stg storage temperature -65 to +175c 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) npn silicon planer epitaxial transistor in hermetically sealed metal case applications intended for high voltage, high current switching applications up to 10a to39 package (to205ad) pin 1 = emitter pin 2 = base pin 3 = collector
BUY82X semelab plc reserves the right to change test condi tions, parameter limits and package dimensions with out notice. information furnished by semelab is bel ieved to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility fo r any errors or omissions discovered in its use. se melab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 7363, issue 2 electrical characteristics (t case =25c unless otherwise stated) parameter test conditions min. typ. max. unit i c = 1.5a 40 h fe * forward-current transfer ratio i c = 10a v ce = 5.0v 15 i c = 10a i b = 1a 1.0 v ce(sat) * collector to emitter saturation voltage i c = 1.5a i b = 150ma 0.8 i c = 10a i b = 1a 1.8 v be(sat) * base to emitter saturated voltage i c = 1.5a i b = 150ma 1.2 v i e = 0 v cb = 100v 10 i cbo collector to base cut-off current t case = 150c 500 i ebo emitter to base cut-off current i c = 0 v eb = 5v 10 a dynamic characteristics t on turn-on time v cc =30v, i c =5.0a, i b =0.5a 1.5 t off turn-off time v cc =30v, i c =5.0a, i b1 =-i b2 =0.5a 1.5 s i e = 0 v cb = 10v c ob output capacitance f = 1.0mhz 200 i c = 0 v eb = 0.5v c ib input capacitance f = 1.0mhz 1200 pf i c = 100ma v ce = 10v f t transition frequency f = 20mhz 20 mhz * pulse test t p = 300 s, < 2% thermal characteristics max. unit r th j-case thermal resistance to case 5.0 c/w r th j-amb thermal resistance junction to ambient 150 c/w
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