2007-04-20 1 bf517 1 2 3 npn silicon rf transistor ? for amplifier and oscillator applications in tv-tuners ? pb-free (rohs compliant) package 1) ? qualified according aec q101 esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bf517 lrs 1 = b 2 = e 3 = c sot23 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 15 v collector-base voltage v cbo 25 emitter-base voltage v ebo 2.5 collector current i c 25 ma peak collector current i cm 50 total power dissipation 2) t s 55 c p tot 280 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 3) r thjs 340 k/w 1 pb-containing package may be available upon special request 2 t s is measured on the collector lead at the soldering point to the pcb 3 for calculation of r thja please refer to application note thermal resistance
2007-04-20 2 bf517 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 15 - - v collector-base cutoff current v cb = 10 v, i e = 0 v cb = 25 v, i e = 0 i cbo - - - - 0.05 10 a emitter-base cutoff current v eb = 2.5 v, i c = 0 i ebo - - 100 dc current gain- i c = 2 ma, v ce = 1 v, pulse measured i c = 25 ma, v ce = 1 v, pulse measured h fe 40 20 - 70 150 - - collector-emitter saturation voltage i c = 10 ma, i b = 1 ma v cesat - 0.1 0.4 v
2007-04-20 3 bf517 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 2 ma, v ce = 5 v, f = 200 mhz i c = 25 ma, v ce = 5 v, f = 200 mhz f t 1 1.3 1.4 2.5 - - ghz collector-base capacitance v cb = 5 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.55 0.8 pf collector emitter capacitance v ce = 5 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.27 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.9 1.45 noise figure i c = 2 ma, v ce = 5 v, z s = 50 ? , f = 800 mhz f - 3.5 5 db transducer gain i c = 20 ma, v ce = 5 v, z s = z l = 50 ? , f = 500 mhz | s 21e | 2 - 13 - db third order intercept point at output v ce = 5 v, i c = 20 ma, f = 800 mhz, z s = z sopt , z l = z lopt ip 3 - 21.5 - dbm 1db compression point i c = 20 ma, v ce = 5 v, z s = z l = 50 ? , f = 800 mhz p -1db - 10 - -
2007-04-20 4 bf517 total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 40 80 120 160 200 240 mw 320 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) f = 1 mhz 0 2 4 6 8 10 12 14 16 v 20 v cb , v eb 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 pf 1.2 c cb , c eb ccb ceb
2007-04-20 5 bf517 transition frequency f t = ? ( i c ) v ce = parameter 0 5 10 15 20 ma 30 i c 0 0.5 1 1.5 2 ghz 3 f t 10v 5v 3v 2v 1v 0.7v
2007-04-20 6 bf517 package sot23 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel eh s bcw66 type code pin 1 0.8 0.9 0.9 1.3 0.8 1.2 0.25 m bc 1.9 -0.05 +0.1 0.4 0.1 2.9 0.95 c b 0...8? 0.2 a 0.1 max. 10? max. 0.08...0.15 1.3 0.1 10? max. m 2.4 0.15 0.1 1 a 0.15 min. 1) 1) lead width can be 0.6 max. in dambar area 12 3 3.15 4 2.65 2.13 0.9 8 0.2 1.15 pin 1 manufacturer 2005, june date code (ym)
2007-04-20 7 bf517 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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